Abstract: A semiconductor structure includes a substrate, an isolation layer, a dielectric layer, an insulation layer, a conductor and a capping layer. The substrate has a concave portion. The isolation layer is located on a top surface of the substrate. The dielectric layer is located on the isolation layer. The insulation layer is located on a surface of the concave portion and extends to a sidewall of the isolation layer. The conductor is located on the insulation layer in the concave portion. The conductor has a first top surface and a second top surface, and the first top surface is closer to the dielectric layer than the second top surface. The capping layer is located in the concave portion and covers the conductor.

Abstract: The present invention discloses a display including a display panel and a light redirecting film disposed on the viewing side of the display panel. The light redirecting film comprises a light redistribution layer, and a light guide layer disposed on the light redistribution layer. The light redistribution layer includes a plurality of strip-shaped micro prisms extending along a first direction and arranged at intervals and a plurality of diffraction gratings arranged at the bottom of the intervals between the adjacent strip-shaped micro prisms, wherein each of the strip-shaped micro prisms has at least one inclined light-guide surface, and the bottom of each interval has at least one set of diffraction gratings, and the light guide layer is in contact with the strip-shaped micro prisms and the diffraction gratings.

Abstract: A burn-in chamber is provided, configured to provide the required temperature for a device under test (DUT), including a side wall, a guiding plate, an air flow plate, a partition assembly, and a fan. The air flow plate has a ventilation structure, and the guiding plate is located between the side wall and the air flow plate. The partition assembly is disposed on both sides of the air flow plate. The partition assembly and the air flow plate together form an accommodating space for accommodating the DUT. The partition assembly forms a return channel with respect to the other side of the accommodating space with the side wall. When the fan is active, air from the accommodating space passes through the air flow plate and is guided to the return channel via the guiding plate, and air is returned to the accommodating space through the return channel.

Abstract: A burn-in chamber is provided, configured to provide the required temperature for a device under test (DUT), including a side wall, a guiding plate, an air flow plate, a partition assembly, and a fan. The air flow plate has a ventilation structure, and the guiding plate is located between the side wall and the air flow plate. The partition assembly is disposed on both sides of the air flow plate. The partition assembly and the air flow plate together form an accommodating space for accommodating the DUT. The partition assembly forms a return channel with respect to the other side of the accommodating space with the side wall. When the fan is active, air from the accommodating space passes through the air flow plate and is guided to the return channel via the guiding plate, and air is returned to the accommodating space through the return channel.

Abstract: A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.

Abstract: A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.