Abstract: Various embodiments herein relate to methods and apparatus for etching a feature in a substrate. Often, the feature is etched in the context of forming a DRAM or other memory device. The feature is etched in dielectric material, which often includes a silicon oxide. The feature is etched using chemistry that includes a metal-containing gas such as tungsten hexafluoride. Although other metal-containing gases are commonly used as deposition gases (e.g., to deposit metal-containing films), they can also be used during etching. Advantageously, the inclusion of a metal-containing gas in the etch chemistry can increase the selectivity of the etch and/or improve the feature-to-feature uniformity (e.g., improve LCDU).

Abstract: A patterning method includes etching a mask formed above a stack of two or more layers where the mask comprises a first patterned structure, a second patterned structure above the first patterned structure, where portions of the second patterned structure intersect the first patterned structure to form intersections and at least an opening. The mask includes a structure vertically between portions of the second patterned structure and the stack. The method includes etching a first layer of the stack through the opening and exposing a top surface of a second layer below the first layer, etching and removing the first patterned structure and the second patterned structure selectively to the first layer and the top surface of the second layer to form a planar mask comprising the first layer. The method further includes etching the second layer of the stack using the planar mask.

Abstract: A burn-in chamber is provided, configured to provide the required temperature for a device under test (DUT), including a side wall, a guiding plate, an air flow plate, a partition assembly, and a fan. The air flow plate has a ventilation structure, and the guiding plate is located between the side wall and the air flow plate. The partition assembly is disposed on both sides of the air flow plate. The partition assembly and the air flow plate together form an accommodating space for accommodating the DUT. The partition assembly forms a return channel with respect to the other side of the accommodating space with the side wall. When the fan is active, air from the accommodating space passes through the air flow plate and is guided to the return channel via the guiding plate, and air is returned to the accommodating space through the return channel.

Abstract: A burn-in chamber is provided, configured to provide the required temperature for a device under test (DUT), including a side wall, a guiding plate, an air flow plate, a partition assembly, and a fan. The air flow plate has a ventilation structure, and the guiding plate is located between the side wall and the air flow plate. The partition assembly is disposed on both sides of the air flow plate. The partition assembly and the air flow plate together form an accommodating space for accommodating the DUT. The partition assembly forms a return channel with respect to the other side of the accommodating space with the side wall. When the fan is active, air from the accommodating space passes through the air flow plate and is guided to the return channel via the guiding plate, and air is returned to the accommodating space through the return channel.

Abstract: A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.

Abstract: A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.