Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a conductive layer, a landing pad, a capacitor, and an interlayer contact. The conductive layer has a trench. The landing pad is filled in the trench. The capacitor is disposed over the landing pad. The interlayer contact is connected between the landing pad and the capacitor. A width of a top of the interlayer contact is greater than a width of the capacitor.

Abstract: A semiconductor device package includes an electronic component, an electrical contact and a reinforcement layer. The electronic component has a first conductive layer on a first surface of the electronic component. The electronic component has a through-silicon-via (TSV) penetrating the electronic component and electrically connected to the first conductive layer. The electrical contact is disposed on the first surface of the electronic component and electrically connected to the first conductive layer. The reinforcement layer is disposed on the first surface of the electronic component.

Abstract: A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a base structure, a first bit line structure and a second bit line structure. The first bit line structure is buried in the base structure. The second bit line structure is buried in the base structure. A maximum width of the first bit line structure is less than a maximum width of the second bit line structure.

Abstract: A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a base structure, a first bit line structure buried in the base structure, a second bit line structure buried in the base structure, and a spacer structure positioned in the base structure. The first bit line structure includes a first main portion and a first cap portion over the first main portion. The first cap portion includes a first lower portion over the first main portion and a first upper portion over the first lower portion. The second bit line structure includes a second main portion and a second cap portion over the second main portion. The spacer structure surrounds the first main portion and the first lower portion of the first cap portion. The spacer structure comprises a first air gap.

Abstract: A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a base structure, a first bit line structure and a second bit line structure. The first bit line structure is buried in the base structure. The second bit line structure is buried in the base structure. A maximum width of the first bit line structure is less than a maximum width of the second bit line structure.

Abstract: A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a base structure, a first bit line structure and a second bit line structure. The first bit line structure is buried in the base structure. The second bit line structure is buried in the base structure. A maximum width of the first bit line structure is less than a maximum width of the second bit line structure.

Abstract: A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a base structure, a first bit line structure buried in the base structure, a second bit line structure buried in the base structure, and a spacer structure positioned in the base structure. The first bit line structure includes a first main portion and a first cap portion over the first main portion. The first cap portion includes a first lower portion over the first main portion and a first upper portion over the first lower portion. The second bit line structure includes a second main portion and a second cap portion over the second main portion. The spacer structure surrounds the first main portion and the first lower portion of the first cap portion. The spacer structure includes a first air gap.

Abstract: A package structure includes an encapsulant, a patterned circuit structure, at least one electronic component and a shrinkage modifier. The patterned circuit structure is disposed on the encapsulant and includes a pad. The electronic component is disposed on the patterned circuit structure, and includes a bump electrically connected to the pad. The shrinkage modifier is encapsulated in the encapsulant and configured to reduce a relative displacement between the bump and the pad along a horizontal direction in an environment of temperature variation.

Abstract: A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a base structure, a bit line structure and a spacer. The bit line structure is disposed over the base structure. The spacer is disposed around the bit line structure, and includes a first layer, a second layer and a third layer. The third layer is disposed over the second layer. A width of the third layer is substantially equal to a width of the second layer.

Abstract: A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a base structure, a bit line structure and a spacer. The bit line structure is disposed over the base structure. The spacer is disposed around the bit line structure, and includes a first layer, a second layer and a third layer. The third layer is disposed over the second layer. A width of the third layer is substantially equal to a width of the second layer.

Abstract: A package structure includes an encapsulant, a patterned circuit structure, at least one electronic component and a shrinkage modifier. The patterned circuit structure is disposed on the encapsulant and includes a pad. The electronic component is disposed on the patterned circuit structure, and includes a bump electrically connected to the pad. The shrinkage modifier is encapsulated in the encapsulant and configured to reduce a relative displacement between the bump and the pad along a horizontal direction in an environment of temperature variation.

Abstract: Processes and systems for converting benzene and/or toluene via methylation with methanol and/or dimethyl ether may be performed by contacting an aromatic hydrocarbon feed with a first methylating agent feed in the presence of a methylation catalyst in a series of fixed beds. Between the fixed beds, the product mixture from the upstream bed may be treated by (a) reducing the temperature, (b) adding additional methylating agent feed, (c) optionally removing water, and (d) optionally adding additional aromatic hydrocarbon feed.

Abstract: An electronic device, including a metal back cover, a ground radiator, a third radiator, and a metal frame including a first cutting opening, a second cutting opening, a first radiator located between the first cutting opening and the second cutting opening, and a second radiator located beside the second cutting opening and separated from the first radiator by the second cutting opening, is provided. An end of a first slot formed between the metal back cover and a first part of the first radiator is communicated with the first cutting opening, and a second slot formed between the metal back cover and a second part of the first radiator and between the metal back cover and the second radiator is communicated with the second cutting opening. The ground radiator connects the metal back cover and the first radiator and separates the first slot from the second slot.

Abstract: The present disclosure provides an electronic device and a method of manufacturing the same. The electronic device includes a first redistribution structure and a first encapsulant. The first encapsulant supports the first redistribution structure and is configured to function as a first reinforcement to provide a second redistribution structure. The redistribution structure has a plurality of conductive layers disposed over the first redistribution structure.

Abstract: An antenna module including a first radiator and a second radiator is provided. The first radiator includes a first segment to a fifth segment connected in sequence. A first slot is formed between the second segment and the fourth segment. The second radiator has an edge. A first retracting distance is between the second segment and an extension line. A second retracting distance is between the fourth segment and the extension line. The first segment resonates at a first high frequency band. The first radiator and the first slot resonate at a low frequency band and a second high frequency band. The first retracting distance, the second retracting distance, the second segment, the fourth segment, the fifth segment and the first slot resonate at a third high frequency band. The first segment and the second radiator resonate at a fourth high frequency band. In addition, an electronic device is provided.

Abstract: The present invention provides a method for recycling sulfuric acid from various industries. The recovery system is constructed that it can process spent acid containing H2O2 and recover waste heat to save energy. The heat from the spent acid recovery process is used to generate electric energy, hot water, and chilled water to reduce its energy consumption, operating cost, and carbon emissions. This system can produce electronic-grade and industrial-grade sulfuric acid at the same time and solve the problem of spent acid disposal from various industries.

Abstract: An electronic device includes a metal back cover, a metal frame, and a first, second, third, and fourth radiators. The metal frame includes a discrete part and two connection parts. The connection parts are located by two sides of the discrete part, separated from the discrete part, and connected to the metal back cover. A U-shaped slot is formed between the discrete part and the metal back cover and between the discrete part and the connection parts. The first radiator is separated from the discrete part and includes a feed end. The second, third, and fourth radiators are connected to the discrete part and the metal back cover. The third radiator is located between the first and second radiators. The first radiator is located between the third and fourth radiators. The discrete part and the first, second, third, and fourth radiators form an antenna module together.

Abstract: An electronic device including a metal back cover, a metal frame, a first radiator and a second radiator is provided. The metal frame includes a disconnected part and two connecting parts, the two connecting parts are located at two sides of the disconnected part, separated from the disconnected part and connected to the metal back cover. A U-shaped slot is formed between the disconnected part and the metal back cover, and between the disconnected part and the two connecting parts. The first radiator is located beside the disconnected part and includes a feeding end and a first connecting end away from the feeding end, and the first connecting end is connected to the disconnected part. The second radiator is located beside the disconnected part, and includes a ground end and a second connecting end opposite to each other. The ground end is connected to the metal back cover.

Abstract: The present disclosure provides an electronic device. The electronic device includes a first electronic component and a second electronic component. The first electronic component is configured to receive a radio frequency (RF) signal and amplify a power of the RF signal. The second electronic component is disposed under the first electronic component. The second electronic component includes an interconnection structure passing through the second electronic component. The interconnection structure is configured to provide a path for a transmission of the RF signal.

Abstract: An electronic device, including a metal back cover, a ground radiator, a third radiator, and a metal frame including a first cutting opening, a second cutting opening, a first radiator located between the first cutting opening and the second cutting opening, and a second radiator located beside the second cutting opening and separated from the first radiator by the second cutting opening, is provided. An end of a first slot formed between the metal back cover and a first part of the first radiator is communicated with the first cutting opening, and a second slot formed between the metal back cover and a second part of the first radiator and between the metal back cover and the second radiator is communicated with the second cutting opening. The ground radiator connects the metal back cover and the first radiator and separates the first slot from the second slot.