Patents by Inventor Hsu-en Yang

Hsu-en Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240177319
    Abstract: Many unsupervised domain adaptation (UDA) methods have been proposed to bridge the domain gap by utilizing domain invariant information. Most approaches have chosen depth as such information and achieved remarkable successes. Despite their effectiveness, using depth as domain invariant information in UDA tasks may lead to multiple issues, such as excessively high extraction costs and difficulties in achieving a reliable prediction quality. As a result, we introduce Edge Learning based Domain Adaptation (ELDA), a framework which incorporates edge information into its training process to serve as a type of domain invariant information. Our experiments quantitatively and qualitatively demonstrate that the incorporation of edge information is indeed beneficial and effective, and enables ELDA to outperform the contemporary state-of-the-art methods on two commonly adopted benchmarks for semantic segmentation based UDA tasks.
    Type: Application
    Filed: November 24, 2023
    Publication date: May 30, 2024
    Applicant: MEDIATEK INC.
    Inventors: Ting-Hsuan Liao, Huang-Ru Liao, Shan-Ya Yang, Jie-En Yao, Li-Yuan Tsao, Hsu-Shen Liu, Bo-Wun Cheng, Chen-Hao Chao, Chia-Che Chang, Yi-Chen Lo, Chun-Yi Lee
  • Patent number: 7531102
    Abstract: First radicals and second radicals are simultaneous deposited into a space defined by two adjacent lines of photoresists and an underlying layer. A portion of the first radicals and the second radicals combine to form a polymer layer on the layer in the center of the space, and substantially simultaneously, another portion of thee first radicals remove the underlying layer near the base of the photoresists. The first radicals may be fluorine-rich and the second radicals may be carbon-rich.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: May 12, 2009
    Assignee: Intel Corporation
    Inventors: Qiquan Geng, Jeff J Xu, Everett B Lee, Michael T Ru, Hsu-en Yang, Chung Hui
  • Publication number: 20070228002
    Abstract: First radicals and second radicals are simultaneous deposited into a space defined by two adjacent lines of photoresists and an underlying layer. A portion of the first radicals and the second radicals combine to form a polymer layer on the layer in the center of the space, and substantially simultaneously, another portion of thee first radicals remove the underlying layer near the base of the photoresists. The first radicals may be fluorine-rich and the second radicals may be carbon-rich.
    Type: Application
    Filed: March 31, 2006
    Publication date: October 4, 2007
    Inventors: Qiquan Geng, Jeff Xu, Everett Lee, Michael Ru, Hsu-en Yang, Chung Hui