Patents by Inventor Hsu-Lin Chang
Hsu-Lin Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 12141392Abstract: The present invention discloses a display panel and a display device. The display panel comprises a plurality of common electrode blocks and a plurality of display regions. During a display period, one or more common electrode blocks corresponding to one of the display regions which is to be displayed during the display period are coupled to a common voltage; and during the display period, one or more of the common electrode blocks corresponding to the display regions which are not to be displayed during the display period are kept in a floating state.Type: GrantFiled: November 22, 2021Date of Patent: November 12, 2024Assignee: Novatek Microelectronics Corp.Inventors: Keko-Chun Liang, Jhih-Siou Cheng, Hsu-Chih Wei, Jui-Chan Chang, Ju-Lin Huang, Po-Ying Chen, Wen-Yi Hsieh
-
Publication number: 20240326021Abstract: The present invention provides a catalyst structure for oxidizing hydrogen in the air, comprising: a base and a catalyst layer, wherein the base comprises a first surface, the catalyst layer is disposed on the first surface of the base, and the catalyst layer comprises: a carbon carrier, multiple catalyst particles, and a fluorinated polymer; wherein the multiple catalyst particles are disposed on a surface of the carbon carrier, and the carbon carrier adheres to the first surface through the fluorinated polymer. The present invention further provides a device for oxidizing hydrogen, comprising: the catalyst structure and a shell, and the shell comprises an accommodation space, a first air flow part and a second air flow part in gas communication with each other; wherein the catalyst structure is disposed in the accommodation space and is between the first air flow part and the second air flow part.Type: ApplicationFiled: November 29, 2023Publication date: October 3, 2024Inventors: Ming-Yu YEN, Ya-Ting TSAI, Fu-Yang SHIH, Hsu-Lin CHANG
-
Publication number: 20240332393Abstract: A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second gate structures disposed on first and second fin structures, first and second source/drain (S/D) regions disposed on the first and second fin structures, first and second contact structures disposed on the first and second S/D regions, and a dipole layer disposed at an interface between the first nWFM silicide layer and the first S/D region. The first contact structure includes a first nWFM silicide layer disposed on the first S/D region and a first contact plug disposed on the first nWFM silicide layer. The second contact structure includes a pWFM silicide layer disposed on the second S/D region, a second nWFM silicide layer disposed on the pWFM silicide layer, and a second contact plug disposed on the pWFM silicide layer.Type: ApplicationFiled: June 13, 2024Publication date: October 3, 2024Applicant: Taiwan Semiconductor Manufacturing Company, LTD.Inventors: Hsu-Kai CHANG, Jhih-Rong HUANG, Yen-Tien TUNG, Chia-Hung CHU, Shuen-Shin LIANG, Tzer-Min SHEN, Pinyen LIN, Sung-Li WANG
-
Patent number: 12040372Abstract: A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second gate structures disposed on first and second fin structures, first and second source/drain (S/D) regions disposed on the first and second fin structures, first and second contact structures disposed on the first and second S/D regions, and a dipole layer disposed at an interface between the first nWFM silicide layer and the first S/D region. The first contact structure includes a first nWFM silicide layer disposed on the first S/D region and a first contact plug disposed on the first nWFM silicide layer. The second contact structure includes a pWFM silicide layer disposed on the second S/D region, a second nWFM silicide layer disposed on the pWFM silicide layer, and a second contact plug disposed on the pWFM silicide layer.Type: GrantFiled: August 10, 2022Date of Patent: July 16, 2024Assignee: Tawian Semiconductor Manufacturing Company, Ltd.Inventors: Hsu-Kai Chang, Jhih-Rong Huang, Yen-Tien Tung, Chia-Hung Chu, Shuen-Shin Liang, Tzer-Min Shen, Pinyen Lin, Sung-Li Wang
-
Publication number: 20230364552Abstract: The invention provides a low-temperature hydrogen oxidation system comprising at least one hydrogen oxidation device, at least one hydrogen reaction module is disposed in the hydrogen oxidation device, at least one hydrogen reaction channel is formed in the hydrogen reaction module and is provided with at least one catalyst, the hydrogen oxidation device is provided with at least one gas inlet channel and at least one gas outlet channel to communicate with the hydrogen reaction channel, at least one cooling channel is further formed in the hydrogen oxidation device; and at least one gas humidifying device disposed at a position of the gas inlet channel.Type: ApplicationFiled: August 24, 2022Publication date: November 16, 2023Inventors: Ming-Yu Yen, HSU-LIN CHANG, FU-YANG SHIH
-
Publication number: 20110065023Abstract: An electricity supply device includes two conductive substrates, a chemical-electrical conversion module and a sealing structure. The chemical-electrical conversion module is disposed between the conductive substrates, and includes two diffusion units and a membrane electrode unit. One diffusion unit is disposed adjacent to one conductive substrate while the other diffusion unit is disposed adjacent to the other conductive substrate. The membrane electrode unit is disposed between the two diffusion units. The sealing structure includes a first protruding structure and a second protruding structure. One end of the first protruding structure is against to one conductive substrate. One end of the diffusion unit and one end of the membrane electrode unit are against to the inner side of one end of the first protruding structure. The second protruding structure is disposed next to the first protruding structure.Type: ApplicationFiled: September 13, 2010Publication date: March 17, 2011Inventors: Yi-Yie Yan, Hsu-Lin Chang
-
Patent number: 7639023Abstract: A fuel cell voltage measurement device includes a main beam provided at two sides with a transverse slot each for slidably receiving a plurality of slides therein, and a plurality of retractable probe assemblies separately mounted on the slides to move along with the slides. Therefore, the retractable probe assemblies are applicable to contact with fuel cell bipolar plates having different heights and/or thicknesses, making the voltage measurement device highly practical for use. A voltage signal collecting unit is provided on a top of the main beam for directly collecting the measured voltage signals to obtain a voltage state of the fuel cell.Type: GrantFiled: June 28, 2006Date of Patent: December 29, 2009Assignee: Industrial Technology Research InstituteInventors: Hsu-Lin Chang, Jar-Lu Huang
-
Publication number: 20070108960Abstract: A fuel cell voltage measurement device includes a main beam provided at two sides with a transverse slot each for slidably receiving a plurality of slides therein, and a plurality of retractable probe assemblies separately mounted on the slides to move along with the slides. Therefore, the retractable probe assemblies are applicable to contact with fuel cell bipolar plates having different heights and/or thicknesses, making the voltage measurement device highly practical for use. A voltage signal collecting unit is provided on a top of the main beam for directly collecting the measured voltage signals to obtain a voltage state of the fuel cell.Type: ApplicationFiled: June 28, 2006Publication date: May 17, 2007Applicant: Industrial Technology Research InstituteInventors: Hsu-Lin Chang, Jar-Lu Huang