Abstract: A fastening apparatus includes a body; a fastener movably disposed at the body; and a resilient component disposed at the body, the resilient component having an end abutting against the body and another end abutting against the fastener such that the resilient component allows the fastener to be protruded from or inserted into the body normally, or the fastener in rotation and the resilient component interact with each other to effectuate limiting-stopping, interfering-stopping or interfering-abutting. The fastener enters the body disposed on the first object and compresses the resilient component. Then, the resilient component protrudes the fastener out of the body, thereby fastening the fastener to the second object quickly. Easy separation of the first and second objects entails moving the fastener into the body. A fastening method for the fastening apparatus is further introduced.

Abstract: A fastening apparatus includes a body; a fastener movably disposed at the body; and a resilient component disposed at the body, the resilient component having an end abutting against the body and another end abutting against the fastener such that the resilient component allows the fastener to be protruded from or inserted into the body normally, or the fastener in rotation and the resilient component interact with each other to effectuate limiting-stopping, interfering-stopping or interfering-abutting. The fastener enters the body disposed on the first object and compresses the resilient component. Then, the resilient component protrudes the fastener out of the body, thereby fastening the fastener to the second object quickly. Easy separation of the first and second objects entails moving the fastener into the body. A fastening method for the fastening apparatus is further introduced.

Abstract: A method of forming a salicide block with reduced defects is disclosed, the method including performing an ultraviolet cure process on a silicon nitride layer deposited in a previous step. High-energy ultraviolet light used in the ultraviolet cure process breaks the hydrogen-containing chemical bonds such as silicon-hydrogen and nitrogen-hydrogen in the silicon nitride layer, and the dissociated hydrogen forms molecular hydrogen which is thereafter evacuated away by a vacuuming apparatus. In this way, the hydrogen content in the silicon nitride layer can be effectively decreased and the reaction between hydrogen in the silicon nitride layer and photoresist subsequently coated thereon can hence be reduced. As a result, a salicide block with reduced defects can be obtained, thus improving process reliability and product yield.

Abstract: A method and apparatus to eliminate contaminants in a lithography process for fabrication of integrated circuit devices. The method includes depositing a photoresist material on surface of a semiconductor substrate. A purge gas flow is provided proximate to an optical element to prevent a vapor from the exposed photoresist material from coming into contact with the optical element. In one embodiment, the purge gas flows into a perforated and open ended enclosure in which the optical element is provided in the form of a lens. One open end of the enclosure is coupled to the lens and the other open end is positioned above the surface of the semiconductor substrate. Perforation of the enclosure facilitates movement of purge gas thereto, eliminating contact with the vapor from the developed resist and unwanted deposition of a solid contamination on the lens.

Abstract: A method and apparatus to eliminate contaminants in a lithography process for fabrication of integrated circuit devices. The method includes depositing a photoresist material on surface of a semiconductor substrate. A purge gas flow is provided proximate to an optical element to prevent a vapor from the exposed photoresist material from coming into contact with the optical element. In one embodiment, the purge gas flows into a perforated and open ended enclosure in which the optical element is provided in the form of a lens. One open end of the enclosure is coupled to the lens and the other open end is positioned above the surface of the semiconductor substrate. Perforation of the enclosure facilitates movement of purge gas thereto, eliminating contact with the vapor from the developed resist and unwanted deposition of a solid contamination on the lens.