Abstract: A semiconductor processing station is provided. The semiconductor processing station includes a first platform, a second platform and a vacuum tunnel, wherein the first platform has a first load lock and a first plurality of chambers, and the second platform has a second load lock and a second plurality of chambers, and the vacuum tunnel connects the first and the second load locks.

Abstract: An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

Abstract: An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

Abstract: A load port for a processing tool includes a carrier, a carrier actuator, an input table, an input table actuator, and a controller. The carrier has a plurality of cassette buffering spaces. The carrier is movable relative to the processing tool. The carrier actuator is operably connected to the carrier. The input table is configured to receive at least one cassette. The input table is movable relative to the carrier. The input table actuator is operably connected to the input table. The controller is configured to control the carrier actuator to move the carrier, such that one of the cassette buffering spaces is aligned with the input table, configured to control the input table actuator to move the input table with the cassette into the aligned cassette buffering space, and configured to control the input table to load the cassette into the aligned cassette buffering space.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: A wafer transfer method includes the following steps. An initial position of a first wafer in a wafer cassette is detected. A picking entry position in the wafer cassette is determined based on the initial position of the first wafer, in which the picking entry position is spaced apart from the initial position of the first wafer. A wafer transfer blade is moved to the picking entry position.

Abstract: This disclosure relates to a magnet assembly including an epicyclic gearing system. The epicyclic gearing system including a central gear configured to be rotated, at least one peripheral gear connected to the central gear and configured to rotate and translate relative to the central gear, and an annulus surrounding the at least one peripheral gear and connected with the at least one peripheral gear. The magnet assembly further includes a magnet module connected with the epicyclic gearing system, the magnet module including a support connected with the at least one peripheral gear, the axis of rotation of the support being coaxial with the axis of rotation of the at least one peripheral gear connected with the support.

Abstract: A wafer chuck is provided. The wafer chuck includes a main body and a dielectric layer disposed over the main body. The wafer chuck also includes an electrode embedded in the dielectric layer and configured to generate an electrostatic field for retaining a wafer. The wafer chuck further includes a thermal conductive layer embedded in the main body or the dielectric layer. The thermal conductive layer has a lateral thermal conductivity greater than a vertical thermal conductivity.

Abstract: Embodiments of a plasma density distribution control method and a plasma processing apparatus are provided. The plasma processing apparatus includes an electrostatic chuck positioned in a processing chamber thereof The electrostatic chuck includes a number of power electrodes for controlling the plasma in the processing chamber, and the power electrodes are separated from and movable relative to each other. Since the distances between the plasma and each of the power electrodes are adjustable, the plasma density in the processing chamber can thus be tunable by zone. Therefore, the uniformity of the plasma density in the processing chamber can be improved. Further, the power electrodes can be driven by a single electrical signal. Therefore, the cost and system complexity of the plasma processing apparatus can be reduced.

Abstract: An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The first and second sensors may communicate the parameters using different and incompatible protocols. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: The present disclosure provides a system for fabricating a semiconductor device. The system includes a semiconductor fabrication tool. The semiconductor fabrication tool has an integrated inter interface that measures a first process parameter of the fabrication tool. The system also includes a wireless sensor. The wireless sensor is detachably coupled to the fabrication tool. The wireless sensor measures a second process parameter of the fabrication tool. The second process parameter is different from the first process parameter.

Abstract: A semiconductor processing station is provided. The semiconductor processing station includes a first platform, a second platform and a vacuum tunnel, wherein the first platform has a first load lock and a first plurality of chambers, and the second platform has a second load lock and a second plurality of chambers, and the vacuum tunnel connects the first and the second load locks.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: This disclosure relates to a magnet assembly including an epicyclic gearing system. The epicyclic gearing system including a central gear configured to be rotated, at least one peripheral gear connected to the central gear and configured to rotate and translate relative to the central gear, and an annulus surrounding the at least one peripheral gear and connected with the at least one peripheral gear. The magnet assembly further includes a magnet module connected with the epicyclic gearing system, the magnet module including a support connected with the at least one peripheral gear, the axis of rotation of the support being coaxial with the axis of rotation of the at least one peripheral gear connected with the support.

Abstract: An apparatus and method for detecting an intensity of radiation in a process chamber, such as an ultraviolet curing process chamber, is disclosed. An exemplary apparatus includes a process chamber having a radiation source therein, wherein the radiation source is configured to emit radiation within the process chamber; a radiation sensor attached to the process chamber; and an optical fiber coupled with the radiation source and the radiation sensor, wherein the optical fiber is configured to transmit a portion of the emitted radiation to the radiation sensor, and the radiation sensor is configured to detect an intensity of the portion of the emitted radiation via the optical fiber.

Abstract: A plasma processing apparatus used in semiconductor device manufacturing includes a process kit formed of insulating materials such as quartz and coated with a Y2O3 coating. The Y2O3 coating is a thin film formed using suitable CVD or PVD operations. The Y2O3 coating is resistant to degradation in fluorine etching chemistries commonly used to etch silicon in semiconductor manufacturing. The plasma processing apparatus may be used in etching, stripping and cleaning operations. Also provided in another embodiment is a plasma processing apparatus having a quartz process kit coated with a sapphire-like film.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: The present disclosure provides a system for fabricating a semiconductor device. The system includes a semiconductor fabrication tool. The semiconductor fabrication tool has an integrated inter interface that measures a first process parameter of the fabrication tool. The system also includes a wireless sensor. The wireless sensor is detachably coupled to the fabrication tool. The wireless sensor measures a second process parameter of the fabrication tool. The second process parameter is different from the first process parameter.