Patents by Inventor Hsu Sung-Mu

Hsu Sung-Mu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrically programmable memory device with improved dual floating gates
    Patent number: 5483487
    Abstract: An improved method and structure for producing electrically programmable read only memory devices (EPROM's) and flash EPROM's having dual sidewall floating gates is provided. A conformal polysilicon layer is formed over a masking line with vertical sidewalls. The conformal layer is anisotrophically etched to form dual floating gates on the sidewalls of the masking line. The masking lines is removed. Source and drain regions are formed in-between and on either side of the dual gates. An insulating layer is formed over the dual gates and substrate surface. A control gate is formed over the dual gates. Word lines and other electrical contracts are formed to complete the EPROM or flash EPROM device.
    Type: Grant
    Filed: April 24, 1995
    Date of Patent: January 9, 1996
    Assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.
    Inventor: Hsu Sung-Mu
  • Electrically programmable memory device with improved dual floating gates
    Patent number: 5440158
    Abstract: An improved method and structure for producing electrically programmable read only memory devices (EPROM's) and flash EPROM's having dual sidewall floating gates is provided. A conformal polysilicon layer is formed over a masking line with vertical sidewalls. The conformal layer is anisotrophically etched to form dual floating gates on the sidewalls of the masking line. The masking lines is removed. Source and drain regions are formed in-between and on either side of the dual gates. An insulating layer is formed over the dual gates and substrate surface. A control gate is formed over the dual gates. Word lines and other electrical contracts are formed to complete the EPROM or flash EPROM device.
    Type: Grant
    Filed: July 5, 1994
    Date of Patent: August 8, 1995
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventor: Hsu Sung-Mu