Abstract: A fluorescence detection system is provided and adapted to provide a selectable excitation beam to an optical transmission path for irradiation of a device under test, including a driving module, a lighting module, a first optical module and a second optical module. The driving module includes a first shaft and a second shaft parallel thereto. The lighting module is fixed to the first shaft. The first optical module and the second optical module are fixed to the second shaft. A driving operation enables the driving module to rotate the lighting module, the first optical module and the second optical module simultaneously, determining quickly a combination of one light source, one filter and one spectroscopic module on the optical transmission path, with the combination corresponding in position to the device under test, so as to reduce the volume and cost the fluorescence detection system.

Abstract: A fluorescence detection system is provided and adapted to provide a selectable excitation beam to an optical transmission path for irradiation of a device under test, including a driving module, a lighting module, a first optical module and a second optical module. The driving module includes a first shaft and a second shaft parallel thereto. The lighting module is fixed to the first shaft. The first optical module and the second optical module are fixed to the second shaft. A driving operation enables the driving module to rotate the lighting module, the first optical module and the second optical module simultaneously, determining quickly a combination of one light source, one filter and one spectroscopic module on the optical transmission path, with the combination corresponding in position to the device under test, so as to reduce the volume and cost the fluorescence detection system.

Abstract: The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoS2 and/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.

Abstract: A semiconductor device includes a substrate, semiconductor 2-D material layer, a conductive 2-D material layer, a gate dielectric layer, and a gate electrode. The semiconductor 2-D material layer is over the substrate. The conductive 2-D material layer extends along a source/drain region of the semiconductor 2-D material layer, in which the conductive 2-D material layer comprises a group-IV element. The gate dielectric layer extends along a channel region of the semiconductor 2-D material layer. The gate electrode is over the gate dielectric layer.

Abstract: A semiconductor device includes a substrate, semiconductor 2-D material layer, a conductive 2-D material layer, a gate dielectric layer, and a gate electrode. The semiconductor 2-D material layer is over the substrate. The conductive 2-D material layer extends along a source/drain region of the semiconductor 2-D material layer, in which the conductive 2-D material layer comprises a group-IV element. The gate dielectric layer extends along a channel region of the semiconductor 2-D material layer. The gate electrode is over the gate dielectric layer.

Abstract: The current disclosure describes semiconductor devices, e.g., transistors, including a substrate, a semiconductor region including, at the surface, monolayer MoS2 and/or other monolayer material over the substrate, and a terminal structure over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.

Abstract: The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoS2 and/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.

Abstract: The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoS2 and/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.

Abstract: The current disclosure describes semiconductor devices, e.g., transistors, including a substrate, a semiconductor region including, at the surface, monolayer MoS2 and/or other monolayer material over the substrate, and a terminal structure over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.

Abstract: The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoS2 and/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.

Abstract: A redundant power supply apparatus includes at least two power inlets, at least two power supply units, and a common component. Each power inlet is connected to an AC power source. Each power supply unit has an input side and the at least two power supply units having a common output side, each input side is connected to the power inlet, and each power supply unit is configured to convert the AC power source into a DC power source. The common component is connected at the common output side and configured to receive DC power sources. Accordingly, the redundant power supply apparatus is provided to improve reliability of redundant operations between multiple external power sources without using mechanical switches.

Abstract: A redundant power supply apparatus includes at least two power inlets, at least two power supply units, and a common component. Each power inlet is connected to an AC power source. Each power supply unit has an input side and the at least two power supply units having a common output side, each input side is connected to the power inlet, and each power supply unit is configured to convert the AC power source into a DC power source. The common component is connected at the common output side and configured to receive DC power sources. Accordingly, the redundant power supply apparatus is provided to improve reliability of redundant operations between multiple external power sources without using mechanical switches.