Patents by Inventor Hsuan-Chang Chen
Hsuan-Chang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12154849Abstract: A method is provided for producing a semiconductor structure including at least one capacitor. The method includes: forming a first metal layer; forming a second metal layer; forming a third high resistance (HiR) layer interposed between the first metal layer and the second metal layer, wherein at least one of the first metal layer and the sconed metal layer at least partially overlap with the third HiR layer; and defining at least one of a first capacitor between the first metal layer and the third HiR layer and a second capacitor between the second metal layer and the third HiR layer. Suitably, the method is carried out subsequent to a front-end-of-line (FEOL) portion of a semiconductor fabrication process.Type: GrantFiled: February 9, 2022Date of Patent: November 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Mingni Chang, Hsuan-Ming Huang, Shiou-Fan Chen
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Publication number: 20240387355Abstract: A method is provided for producing a semiconductor structure including at least one capacitor. The method includes: forming a first metal layer; forming a second metal layer; forming a third high resistance (HiR) layer interposed between the first metal layer and the second metal layer, wherein at least one of the first metal layer and the second metal layer at least partially overlap with the third HiR layer; and defining at least one of a first capacitor between the first metal layer and the third HiR layer and a second capacitor between the second metal layer and the third HiR layer. Suitably, the method is carried out subsequent to a front-end-of-line (FEOL) portion of a semiconductor fabrication process.Type: ApplicationFiled: July 29, 2024Publication date: November 21, 2024Inventors: Mingni Chang, Hsuan-Ming Huang, Shiou-Fan Chen
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Publication number: 20240387679Abstract: A semiconductor device and method of manufacture are provided. In some embodiments a treatment process is utilized to treat a work function layer. The treatment prevents excessive oxidation of the work function layer during subsequent processing steps, such as application of a subsequent photoresist material, thereby allowing the work function layer to be thinner than otherwise.Type: ApplicationFiled: July 29, 2024Publication date: November 21, 2024Inventors: Chia-Ching Lee, Hung-Chin Chung, Chung-Chiang Wu, Hsuan-Yu Tung, Kuan-Chang Chiu, Chien-Hao Chen, Chi On Chui
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Publication number: 20240363627Abstract: A structure includes a semiconductor substrate including a first semiconductor region and a second semiconductor region, a first transistor in the first semiconductor region, and a second transistor in the second semiconductor region. The first transistor includes a first gate dielectric over the first semiconductor region, a first work function layer over and contacting the first gate dielectric, and a first conductive region over the first work function layer. The second transistor includes a second gate dielectric over the second semiconductor region, a second work function layer over and contacting the second gate dielectric, wherein the first work function layer and the second work function layer have different work functions, and a second conductive region over the second work function layer.Type: ApplicationFiled: July 9, 2024Publication date: October 31, 2024Inventors: Kuan-Chang Chiu, Chia-Ching Lee, Chien-Hao Chen, Hung-Chin Chung, Hsien-Ming Lee, Chi On Chui, Hsuan-Yu Tung, Chung-Chiang Wu
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Patent number: 12087767Abstract: A structure includes a semiconductor substrate including a first semiconductor region and a second semiconductor region, a first transistor in the first semiconductor region, and a second transistor in the second semiconductor region. The first transistor includes a first gate dielectric over the first semiconductor region, a first work function layer over and contacting the first gate dielectric, and a first conductive region over the first work function layer. The second transistor includes a second gate dielectric over the second semiconductor region, a second work function layer over and contacting the second gate dielectric, wherein the first work function layer and the second work function layer have different work functions, and a second conductive region over the second work function layer.Type: GrantFiled: December 20, 2022Date of Patent: September 10, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuan-Chang Chiu, Chia-Ching Lee, Chien-Hao Chen, Hung-Chin Chung, Hsien-Ming Lee, Chi On Chui, Hsuan-Yu Tung, Chung-Chiang Wu
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Publication number: 20170200398Abstract: A producing method of a tooth model for clinic practice having steps of: obtaining a tooth data, wherein the tooth data comprises inner and outer appearance and size of a real tooth; 3D printing a semi-finished tooth model according to the tooth data by using a first material and a second material, the first and second material is cured by light when 3D printing; wherein the semi-finished tooth model has a tooth body, a tooth pulp portion and a sacrificial portion; the tooth body is covered by the sacrificial portion and the tooth pulp portion is covered by the tooth body; the tooth body and the tooth pulp portion having a crown part at the top and a least one root part at the bottom of the semi-finished tooth model; the tooth pulp portion is in tube shape which is gradually contracted from the crown part to the root part; the tooth body is printed by using the first material and the tooth pulp portion and the sacrificial portion are printed by using the second material; the first material has greater mechaniType: ApplicationFiled: January 11, 2017Publication date: July 13, 2017Inventors: Hsuan-Chang Chen, Tuan-Ti Hsu, Wen-Hsin Chang, Wei-Yun Lai, Chi-Jr Hung
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Publication number: 20140209766Abstract: A retaining apparatus includes a first bracket, a second bracket, and an operation member. The first bracket includes two sidewalls. The second bracket includes two side plates slidably attached to the sidewalls, respectively. The operation member includes an operation portion, a mounting piece fixed to the second sidewall, and an engaging piece. A flange extends from one of the side plates of the second bracket. When the second bracket and the first bracket slide toward each other, the engaging piece abuts against a first end of the flange. The operation portion is pressed inward to release the engaging piece from the flange, and the second bracket is slid out relative to the first bracket until the engaging piece is restored to abut against a second end of the flange.Type: ApplicationFiled: July 30, 2013Publication date: July 31, 2014Applicant: HON HAI PRECISION INDUSTRY CO., LTD.Inventors: YU-SHUN CHANG, HSUAN-CHANG CHEN, CHUNG-PING LIU
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Patent number: 8369093Abstract: A mounting apparatus for mounting an expansion card to an electronic device includes a panel, a fixing bracket, and two locking members. The panel includes a rectangular plate and a frame. The fixing bracket is pivotably secured to the frame. The fixing bracket includes a contact portion and two pivot portions. The contact portion includes a first latching plate and a second latching plate. The first latching plate and the second latching plate cooperatively define a receiving space therebetween. Each of the two pivot portions includes a main plate, a stop plate, and a resilient portion. The two locking members are received in the two pivot portions. The top surface and a block plate of the expansion card are received in the receiving space.Type: GrantFiled: December 24, 2010Date of Patent: February 5, 2013Assignee: Hon Hai Precision Industry Co., Ltd.Inventors: Hsuan-Chang Chen, Chia-Ming Chang, Ping-Hung Chen
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Publication number: 20120161599Abstract: An anti-drop structure includes a rail assembly, a drag assembly, and two latching members. The rail assembly includes a pair of L-shaped sliding rails. Each L-shaped sliding rail includes a sidewall and a holding portion bent outwards from an end of the sidewall. One end of the sidewall defines a latching opening. The drag assembly is slidably positioned on the holding portions of the sliding rails and located between the sidewalls of the sliding rails. The drag assembly includes two opposite side plates. Each latching member is positioned on an inner surface of a corresponding one of the side plates, and includes a latching portion passing through a corresponding side plate. The latching portion is configured to slid into a corresponding latching opening to prevent the drag assembly from dropping out of the rail assembly.Type: ApplicationFiled: April 19, 2011Publication date: June 28, 2012Applicant: HON HAI PRECISION INDUSTRY CO., LTD.Inventors: HSUAN-CHANG CHEN, CHIA-MING CHANG, PING-HUNG CHEN
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Publication number: 20120127649Abstract: A mounting apparatus for mounting an expansion card to an electronic device includes a panel, a fixing bracket, and two locking members. The panel includes a rectangular plate and a frame. The fixing bracket is pivotably secured to the frame. The fixing bracket includes a contact portion and two pivot portions. The contact portion includes a first latching plate and a second latching plate. The first latching plate and the second latching plate cooperatively define a receiving space therebetween. Each of the two pivot portions includes a main plate, a stop plate, and a resilient portion. The two locking members are received in the two pivot portions. The top surface and a block plate of the expansion card are received in the receiving space.Type: ApplicationFiled: December 24, 2010Publication date: May 24, 2012Applicant: HON HAI PRECISION INDUSTRY CO., LTD.Inventors: HSUAN-CHANG CHEN, CHIA-MING CHANG, PING-HUNG CHEN