Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.

Abstract: A semiconductor device structure and a manufacturing method thereof are provided. The semiconductor device structure includes a semiconductor substrate, semiconductor channel sheets disposed over the semiconductor substrate, and source and drain regions located beside the semiconductor channel sheets. A gate structure is disposed between the source and drain regions and disposed over the semiconductor channel sheets. The gate structure laterally surrounds the semiconductor channel sheets. The gate structure includes a top gate electrode structure disposed above the semiconductor channel sheets, and lower gate electrode structures disposed between the semiconductor channel sheets. Sidewall spacers are disposed between the gate structure and source and drain regions, and the sidewall spacers located next to the top gate electrode structure have slant sidewalls.

Abstract: A method for optimizing operation of convolution neural network outputs an input matrix of an input image. The method further slides on the input matrix according to preset convolution kernels to perform dot products to output first output matrixes on a convolution computing layer. Nonlinear mapping of the first output matrixes is performed according to a preset activation functions on an activation layer to output a second output matrixes. The method does not perform bias operations on the convolution computing layer. The results of the dot products performed on the convolution computing layer are output to the activation layer and bias operations are performed on the activation layer. The method reduces amount of calculation whilst not reducing accuracy of processing. An electronic device, a convolution neural network, and a non-transitory storage medium are also disclosed.

Abstract: A pixel unit. A first thin film transistor comprises a first control terminal receiving a scan signal, a first electrode receiving a data signal, and a second electrode. A second thin film transistor comprises a second control terminal coupled to the second electrode, a third electrode receiving a first voltage, a fourth electrode, and a fifth electrode coupled to one of the third and the fourth electrodes. A capacitor is coupled between the second control terminal and the third electrode. A light-emitting device is coupled between the fourth electrode and a second voltage.

Abstract: Embodiments of a system for displaying images include a light emitting device with a plurality of photo sensors. Each photo sensor includes a PIN diode composed of an N+ doped semiconductor region, a P+ doped semiconductor region, and an intrinsic semiconductor region formed therebetween. An insulated control gate overlaps the intrinsic semiconductor region and is operative to provide the PIN diode with a controllable electric characteristic with respect to a saturation photo current at a saturation voltage.

Abstract: A pixel unit. A first thin film transistor comprises a first control terminal receiving a scan signal, a first electrode receiving a data signal, and a second electrode. A second thin film transistor comprises a second control terminal coupled to the second electrode, a third electrode receiving a first voltage, a fourth electrode, and a fifth electrode coupled to one of the third and the fourth electrodes. A capacitor is coupled between the second control terminal and the third electrode. A light-emitting device is coupled between the fourth electrode and a second voltage.