Abstract: A method is provided forming an airtight structure of an electroacoustic device which includes a body shell composed of at least two half-shells and at least one airtight structure region. The method includes providing an automatic glue dispensing device for dispensing and pre-curing a photo-curing glue for one of the two half-shells, putting the half-shell into a photo-curing device to convert the photo-curing glue pre-cured completely into an elastomer, and combining the half-shell and the other one to have a pressing wall of the other half-shell to press the elastomer to form the airtight structure of the electroacoustic device, wherein the automatic glue dispensing device includes a glue dispensing head moving on a groove of the airtight region of the half-shell for dispensing the photo-curing glue and a pre-curing head continuously providing a curing light ray for pre-curing the photo-curing glue.

Abstract: The present invention discloses a DAC method having signal calibration mechanism is provided. Operation states of current sources are controlled to generate an output analog signal by a DAC circuit according to a codeword of an input digital signal. An echo signal is generated by an echo transmission circuit according to the output analog signal. The codeword is mapped to generate an offset signal by a calibration circuit according to a codeword offset mapping table. The offset signal is processed to generate an echo-canceling signal by an echo-canceling circuit. By a calibration parameter calculation circuit, offset amounts are generated according to a difference between the echo signal and the echo-canceling signal, the offset amounts are grouped to perform statistic operation according to the operation states and current offset values are calculated according to calculation among groups and converted to codeword offset values to update the codeword offset mapping table.

Abstract: A method for optimizing operation of convolution neural network outputs an input matrix of an input image. The method further slides on the input matrix according to preset convolution kernels to perform dot products to output first output matrixes on a convolution computing layer. Nonlinear mapping of the first output matrixes is performed according to a preset activation functions on an activation layer to output a second output matrixes. The method does not perform bias operations on the convolution computing layer. The results of the dot products performed on the convolution computing layer are output to the activation layer and bias operations are performed on the activation layer. The method reduces amount of calculation whilst not reducing accuracy of processing. An electronic device, a convolution neural network, and a non-transitory storage medium are also disclosed.

Abstract: A pixel unit. A first thin film transistor comprises a first control terminal receiving a scan signal, a first electrode receiving a data signal, and a second electrode. A second thin film transistor comprises a second control terminal coupled to the second electrode, a third electrode receiving a first voltage, a fourth electrode, and a fifth electrode coupled to one of the third and the fourth electrodes. A capacitor is coupled between the second control terminal and the third electrode. A light-emitting device is coupled between the fourth electrode and a second voltage.

Abstract: Embodiments of a system for displaying images include a light emitting device with a plurality of photo sensors. Each photo sensor includes a PIN diode composed of an N+ doped semiconductor region, a P+ doped semiconductor region, and an intrinsic semiconductor region formed therebetween. An insulated control gate overlaps the intrinsic semiconductor region and is operative to provide the PIN diode with a controllable electric characteristic with respect to a saturation photo current at a saturation voltage.

Abstract: A pixel unit. A first thin film transistor comprises a first control terminal receiving a scan signal, a first electrode receiving a data signal, and a second electrode. A second thin film transistor comprises a second control terminal coupled to the second electrode, a third electrode receiving a first voltage, a fourth electrode, and a fifth electrode coupled to one of the third and the fourth electrodes. A capacitor is coupled between the second control terminal and the third electrode. A light-emitting device is coupled between the fourth electrode and a second voltage.