Abstract: An embodiment composite material for semiconductor package mount applications may include a first component including a tin-silver-copper alloy and a second component including a tin-bismuth alloy or a tin-indium alloy. The composite material may form a reflowed bonding material having a room temperature tensile strength in a range from 80 MPa to 100 MPa when subjected to a reflow process. The reflowed bonding material may include a weight fraction of bismuth that is in a range from approximately 4% to approximately 15%. The reflowed bonding material may an alloy that is solid solution strengthened by a presence of bismuth or indium that is dissolved within the reflowed bonding material or a solid solution phase that includes a minor component of bismuth dissolved within a major component of tin. In some embodiments, the reflowed bonding material may include intermetallic compounds formed as precipitates such as Ag3Sn and/or Cu6Sn5.

Abstract: A switch structure with multiple usages, in which the engaging seat is firmly associated with the main body only by means of engaging the the engaging hooks of the engaging seat with the reverse hooks of the main body without using any screw or rivet. The central shaft of the rotary switch is integrally formed with three arch stopper blocks and between each two arch stopper blocks is formed an acute driving block which such contacts with bent arms of the conductive plates and the connecting plate that when the rotary switch is rotated to rotarily drive the central shaft, the contacts of the central shaft are revolved clockwisely or counterclockwisely to change the positions of the contacts relative to the conductive plates so as to save power. A third conductive wire can be inserted through the other oblique notch of the main body into an insertion hole of the connecting plate to change the switch structure into one with three sets of wires.