Patents by Inventor Hsuan-Pang LIU

Hsuan-Pang LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11264204
    Abstract: The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: March 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Hsiung Lin, Cheng-En Lee, Chia-Lin Ou, Hsuan-Pang Liu, Yao-Jen Yeh
  • Publication number: 20220059320
    Abstract: An ion implantation system comprising: a sample platform; an ion gun; an electrostatic linear accelerator; a direct current (DC) final energy magnet (FEM); and a processor. The processor is programmed to control: a wafer acceptance test instrument, a DC recipe calculator, a DC real energy calculator, and a tool energy shift verifier. The wafer acceptance test instrument is configured to apply a wafer acceptance test (WAT) recipe to a test sample on the sample platform. The DC recipe calculator is configured to calculate a recipe for the DC FEM. The DC real energy calculator is configured to calculate a real energy of the DC FEM. The tool energy shift verifier is configured to verify a tool energy shift of the DC FEM. The ion implantation system is configured to tune the DC FEM based on the verified tool energy shift, and obtain a peak magnetic field of the DC FEM.
    Type: Application
    Filed: November 1, 2021
    Publication date: February 24, 2022
    Inventors: Yi-Hsiung LIN, Yao-Jen YEH, Chia-Lin OU, Cheng-En LEE, Hsuan-Pang LIU
  • Patent number: 11164722
    Abstract: A method of tuning an ion implantation apparatus is disclosed. The method includes operations of applying any wafer acceptance test (WAT) recipe to a test sample, calculating a recipe for a direct current (DC) final energy magnet (FEM), calculating a real energy of the DC FEM, verifying the tool energy shift, and obtaining a peak spectrum of the DC FEM.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: November 2, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Hsiung Lin, Yao-Jen Yeh, Chia-Lin Ou, Cheng-En Lee, Hsuan-Pang Liu
  • Publication number: 20210043422
    Abstract: The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.
    Type: Application
    Filed: October 26, 2020
    Publication date: February 11, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Hsiung Lin, Cheng-En Lee, Chia-Lin Ou, Hsuan-Pang Liu, Yao-Jen Yeh
  • Patent number: 10818473
    Abstract: The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.
    Type: Grant
    Filed: August 13, 2019
    Date of Patent: October 27, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Hsiung Lin, Cheng-En Lee, Chia-Lin Ou, Hsuan-Pang Liu, Yao-Jen Yeh
  • Publication number: 20200058465
    Abstract: The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.
    Type: Application
    Filed: August 13, 2019
    Publication date: February 20, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Hsiung LIN, Cheng-En LEE, Chia-Lin OU, Hsuan-Pang LIU, Yao-Jen YEH
  • Publication number: 20200043700
    Abstract: A method of tuning an ion implantation apparatus is disclosed. The method includes operations of applying any wafer acceptance test (WAT) recipe to a test sample, calculating a recipe for a direct current (DC) final energy magnet (FEM), calculating a real energy of the DC FEM, verifying the tool energy shift, and obtaining a peak spectrum of the DC FEM.
    Type: Application
    Filed: July 29, 2019
    Publication date: February 6, 2020
    Inventors: Yi-Hsiung LIN, Yao-Jen YEH, Chia-Lin OU, Cheng-En LEE, Hsuan-Pang LIU
  • Publication number: 20190099856
    Abstract: A polishing pad for a chemical-mechanical polishing apparatus includes a first support layer and a polishing layer. The polishing layer is present on the first support layer. The polishing layer has a top surface that faces away from the first support layer and at least one first cavity that is buried at least beneath the top surface of the polishing layer.
    Type: Application
    Filed: November 30, 2018
    Publication date: April 4, 2019
    Inventors: Chi-Hao HUANG, Hsuan-Pang LIU, Yuan-Chun SIE, Pinyen LIN, Cheng-Chung CHIEN
  • Patent number: 10189143
    Abstract: A polishing pad for a chemical-mechanical polishing apparatus includes a first support layer and a polishing layer. The polishing layer is present on the first support layer. The polishing layer has a top surface that faces away from the first support layer and at least one first cavity that is buried at least beneath the top surface of the polishing layer.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: January 29, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Chi-Hao Huang, Hsuan-Pang Liu, Yuan-Chun Sie, Pinyen Lin, Cheng-Chung Chien
  • Publication number: 20170151648
    Abstract: A polishing pad for a chemical-mechanical polishing apparatus includes a first support layer and a polishing layer. The polishing layer is present on the first support layer. The polishing layer has a top surface that faces away from the first support layer and at least one first cavity that is buried at least beneath the top surface of the polishing layer.
    Type: Application
    Filed: May 18, 2016
    Publication date: June 1, 2017
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Hao HUANG, Hsuan-Pang LIU, Yuan-Chun SIE, Pinyen LIN, Cheng-Chung CHIEN