Patents by Inventor Hsuan-Sheng Lin

Hsuan-Sheng Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fast precharge method and circuit with mismatch cancellation
    Patent number: 11978392
    Abstract: A precharge method for a data driver includes steps of: outputting a display data to a plurality of output terminals of the data driver; outputting a second precharge voltage to an output terminal among the plurality of output terminals prior to outputting the display data to the output terminal, to precharge the output terminal to a voltage level closer to an output voltage; and outputting a first precharge voltage to the output terminal prior to outputting the second precharge voltage. The first precharge voltage provides a faster voltage transition on the output terminal than the second precharge voltage.
    Type: Grant
    Filed: May 31, 2023
    Date of Patent: May 7, 2024
    Assignee: NOVATEK Microelectronics Corp.
    Inventors: Min-Yang Chiu, Yu-Sheng Ma, Jin-Yi Lin, Hsuan-Yu Chen, Jhih-Siou Cheng, Chun-Fu Lin
  • Semiconductor device and method for fabricating the same
    Patent number: 10043675
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: August 7, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Huang-Ren Wei, Hsuan-Sheng Lin
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20170287723
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.
    Type: Application
    Filed: June 22, 2017
    Publication date: October 5, 2017
    Inventors: Huang-Ren Wei, Hsuan-Sheng Lin
  • Semiconductor device and method for fabricating the same
    Patent number: 9721804
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: August 1, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Huang-Ren Wei, Hsuan-Sheng Lin
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20170207096
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.
    Type: Application
    Filed: February 15, 2016
    Publication date: July 20, 2017
    Inventors: Huang-Ren Wei, Hsuan-Sheng Lin