Patents by Inventor Hsuan-Sheng Tung

Hsuan-Sheng Tung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050202680
    Abstract: A method for shrinking a dimension of a gate is provided that utilizes a thermal oxidation to form an oxide layer on a semiconductor substrate and a gate. Controlling the thickness of the oxide layer on the gate will control the channel length of a gate. The oxide layer on the gate is stripped by a suitable etching solution and then shrinkage of the dimension of the gate is achieved. That is, an ability of a photolithography is overcome, moreover; shrinking the dimension of the gate to reach an advanced process by the most economical method.
    Type: Application
    Filed: March 15, 2004
    Publication date: September 15, 2005
    Inventors: Yao-Chia Yeh, Hsiao-Wen Chuang, Chien-Nan Tu, Hsuan-Sheng Tung
  • Publication number: 20030209069
    Abstract: A chemical bath having liquid level indications in an outer trough is disclosed. The present invention adds an aqueduct in the outer bath of the chemical bath, and the chemical treatment liquid could flow into the aqueduct. According to the Pascal's law, the liquid level of the chemical treatment liquid in the aqueduct is the same with the liquid level of the chemical treatment liquid in the outer bath. Therefore, the level height of the chemical treatment liquid in the outer bath is observed from the transparent aqueduct by the naked eyes. The present invention abridges the complicated checkup steps, so that the producing time of apparatuses is increased and the amount of the wastes chemicals is decreased.
    Type: Application
    Filed: May 13, 2002
    Publication date: November 13, 2003
    Applicant: SILICON INTEGRATED SYSTEMS CORP.
    Inventors: Hsuan-Sheng Tung, Hsin-Ta Chien, Jui-Ping Li
  • Publication number: 20030209259
    Abstract: The present invention, a method for decreasing wafer scrap rate in the chemical treatment apparatus, performs the controls of the robots, the drain valve of the chemical treatment bath and the supply valve of ultra-pure water to decrease the reaction rate between a wafer and the chemical treatment liquid, wherein the controls are performed in accordance with different abnormal factors, such as the abnormal conditions of power supply and the robots. The present invention can be used in the control system, such as by writing a recipe added to the control system. When an alarm occurs, the control system can execute the recipe to decrease the wafer damage. According to the present invention, the method for decreasing wafer scrap rate in the chemical treatment apparatus has the advantages of saving the wafer-manufacturing cost and increasing the wafer-manufacturing yield.
    Type: Application
    Filed: May 8, 2002
    Publication date: November 13, 2003
    Inventors: Hsuan-Sheng Tung, Hsin-Ta Chien, Jui-Ping Li