Abstract: The present invention relates to a multicomponent-alloy material layer and a method of manufacturing the multicomponent-alloy material layer and a capacitor structure of a semiconductor device comprising the multicomponent-alloy material layer. The multicomponent-alloy material layer has four to six metal elements and has specific two kinds of metal components, and the two kinds of metal components have a specific content ratio, such that without a thermal annealing treatment, the multicomponent-alloy material layer has a specific work function for an application in the capacitor structure of the semiconductor device.

Abstract: A heat dissipating device includes a main body and a working fluid. The main body has a plurality of hollow chambers formed therein. The working fluid is disposed in the plurality of hollow chambers. The plurality of hollow chambers may be communicated or not communicated with each other.

Abstract: The present invention relates to a heat dissipation device, including at least one semiconductor device, at least one first substrate and a cooling substance. The first substrate has a first surface, a second surface and at least one hole, wherein the semiconductor device is located on the first surface of the first substrate, and the hole is opened at the second surface of the first substrate and corresponds to the semiconductor device. The cooling substance is used for flowing in the hole and taking away heat from the semiconductor device, wherein the cooling substance is in contact with the first substrate. Thereby, the temperature of the semiconductor device can be reduced efficiently.