Patents by Inventor Hsuan-Tang Chan

Hsuan-Tang Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting diode and method
    Patent number: 8008679
    Abstract: A light emitting diode and methods of forming the same are provided. The light emitting diode includes an epitaxy chip having a first substrate, a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer on the first substrate; a second substrate holding the epitaxy chip; an isolation layer on the second substrate, the isolation layer having a first portion connecting to one side of the epitaxy chip and a second portion connecting to another side of the epitaxy chip; a first electrode on the first portion of the isolation layer; and a second electrode on the second portion of the isolation layer, wherein the first electrode and the second electrode respectively and electrically connect to the first conductive semiconductor layer and the second conductive semiconductor layer.
    Type: Grant
    Filed: December 8, 2008
    Date of Patent: August 30, 2011
    Assignee: Huga Optotech Inc.
    Inventor: Hsuan-Tang Chan
  • LIGHT EMITTING DIODE AND METHOD
    Publication number: 20090224275
    Abstract: A light emitting diode and methods of forming the same are provided. The light emitting diode includes an epitaxy chip having a first substrate, a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer on the first substrate; a second substrate holding the epitaxy chip; an isolation layer on the second substrate, the isolation layer having a first portion connecting to one side of the epitaxy chip and a second portion connecting to another side of the epitaxy chip; a first electrode on the first portion of the isolation layer; and a second electrode on the second portion of the isolation layer, wherein the first electrode and the second electrode respectively and electrically connect to the first conductive semiconductor layer and the second conductive semiconductor layer.
    Type: Application
    Filed: December 8, 2008
    Publication date: September 10, 2009
    Applicant: HUGA OPTOTECH INC.
    Inventor: Hsuan-Tang Chan