Abstract: The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a first semiconductor material layer, a light-emitting layer, a second semiconductor material layer, a first transparent insulating layer, a metal layer and at least one electrode. The first semiconductor material layer, the light-emitting layer, and the second semiconductor material layer are formed in sequence on the substrate. An opening is formed on the upper surface of the second semiconductor material layer and extends to the interior of the first semiconductor material layer. The first transparent insulating layer overlays the sidewalls of the opening and substantially overlays the upper surface of the second semiconductor material layer such that a region of the upper surface is exposed. The metal layer fills the opening, overlays the exposed region, and partially overlays the first transparent insulating layer. The at least one electrode is formed on the metal layer.