Abstract: A computer comprising a recordable medium on which is stored instructions for at least one model-based, run-to-run controller routine is provided. The computer includes instructions to receive a first dataset regarding a first wafer after a first process, to determine a process parameter for the first process for a second wafer using the first dataset; and to determine a second process parameter for a second process for the first wafer using the first dataset. In an embodiment, the first process is an etch process. In an embodiment, the second process is a planarization process.

Abstract: A thermal process system. The thermal process system comprises a thermal processor, a metrology tool, and a controller. The thermal processor performs a thermal process as defined by a heating model to form a film on a wafer surface. The metrology tool, interfaced with the thermal processor, inspects thickness of the film. The controller, coupled with the thermal processor and the metrology tool, generates the heating model of the thermal processor and calibrates the heating model according to a preset slope coefficient matrix and the measured thickness.

Abstract: A computer comprising a recordable medium on which is stored instructions for at least one model-based, run-to-run controller routine is provided. The computer includes instructions to receive a first dataset regarding a first wafer after a first process, to determine a process parameter for the first process for a second wafer using the first dataset; and to determine a second process parameter for a second process for the first wafer using the first dataset. In an embodiment, the first process is an etch process. In an embodiment, the second process is a planarization process.

Abstract: An advanced process control (APC) method for semiconductor fabrication is provided. A first substrate and a second substrate are provided. The first substrate and the second substrate include a dielectric layer. A first etch process parameter for the first substrate is determined. A trench is etched in the dielectric layer of the first substrate using the first etch process parameter. At least one aspect of the etched trench of the first substrate is measured. A second etch process parameter for the second substrate is determined using the measured aspect of the etched trench of the first substrate. A planarization process parameter for the first substrate is determined also using the measured aspect of the etched trench of the first substrate.

Abstract: Provided is a system and method for connecting semiconductor manufacturing equipment to a host and one or more clients. In one example, the system includes an application queue, a host queue, and an equipment queue configured to hold messages received from and sent to an application agent, a host agent, and an equipment agent, respectively. A management information base may be configured to store information identifying a first virtual channel linking the client with the manufacturing equipment via the application queue and the equipment queue, and a second virtual channel linking the host with the manufacturing equipment via the host queue and the equipment queue. A dispatcher may be configured to use information from the management information base to route messages between the client and the manufacturing equipment via the first virtual channel and to route messages between the host and the manufacturing equipment via the second virtual channel.

Abstract: An advanced process control (APC) method for semiconductor fabrication is provided. A first substrate and a second substrate are provided. The first substrate and the second substrate include a dielectric layer. A first etch process parameter for the first substrate is determined. A trench is etched in the dielectric layer of the first substrate using the first etch process parameter. At least one aspect of the etched trench of the first substrate is measured. A second etch process parameter for the second substrate is determined using the measured aspect of the etched trench of the first substrate. A planarization process parameter for the first substrate is determined also using the measured aspect of the etched trench of the first substrate.

Abstract: Systems of process control integration are provided. An embodiment of a system of process control integration comprises multiple process control systems (PCSs) and a supervisor controller. Each PCS calculates at least one process parameter based on at least one process model, a process target and an acceptable range. The supervisor controller couples to and coordinates the PCSs. A semiconductor fabrication operation is performed on a wafer based on the process parameter.

Abstract: A thermal process system. The thermal process system comprises a thermal processor, a metrology tool, and a controller. The thermal processor performs a thermal process as defined by a heating model to form a film on a wafer surface. The metrology tool, interfaced with the thermal processor, inspects thickness of the film. The controller, coupled with the thermal processor and the metrology tool, generates the heating model of the thermal processor and calibrates the heating model according to a preset slope coefficient matrix and the measured thickness.

Abstract: A system and method for detecting a fault and identifying a remedy for the fault in real-time in a semiconductor product manufacturing facility are provided. In one example, the method includes importing data from a manufacturing device and data representing a plurality of different manufacturing devices into an analysis tool. The imported data is analyzed using the analysis tool to determine if a fault exists in the manufacturing device's operation and, if a fault exists, the fault is classified and a remedy for the fault is identified based at least partly on the classification. Configuration data used to control the manufacturing device may be updated, and the update may apply the remedy to the configuration information. The manufacturing device's operation may then be modified using the updated configuration data.