Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

Abstract: A method includes: receiving a library associated with a cell; determining a plurality of candidate hold times for the cell; acquiring a plurality of candidate setup times corresponding to the plurality of candidate hold times, wherein a data delay associated with each of the candidate setup time fulfills a data delay constraint for the cell; adding the plurality of candidate setup times to the plurality of candidate hold times, respectively, to obtain a plurality of candidate time windows; and selecting a target time window having a minimal time span among the candidate time windows. At least one of the receiving, determining, acquiring, adding and selecting steps is conducted by at least one processor.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

Abstract: A method includes: receiving a library associated with a cell; determining a plurality of candidate hold times for the cell; acquiring a plurality of candidate setup times corresponding to the plurality of candidate hold times, wherein a data delay associated with each of the candidate setup time fulfills a data delay constraint for the cell; adding the plurality of candidate setup times to the plurality of candidate hold times, respectively, to obtain a plurality of candidate time windows; and selecting a target time window having a minimal time span among the candidate time windows. At least one of the receiving, determining, acquiring, adding and selecting steps is conducted by at least one processor.

Abstract: A method is provided. A library associated with a cell is received. A minimum setup time of the cell is acquired in response to an ideal hold time according to the library and a reference clock. A maximum hold time of the cell is acquired in response to the minimum setup time according to the library and the reference clock. A plurality of candidate hold times are determined. A plurality of candidate setup times are acquired corresponding to the plurality of candidate hold times according to the library and the reference clock. The plurality of candidate setup times are added to the plurality of candidate hold times, respectively, to obtain a plurality of candidate time windows. A target time window is selected that has a minimal time span among the candidate time windows.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

Abstract: A method is provided. A library associated with a cell is received. A minimum setup time of the cell is acquired in response to an ideal hold time according to the library and a reference clock. A maximum hold time of the cell is acquired in response to the minimum setup time according to the library and the reference clock. A plurality of candidate hold times are determined. A plurality of candidate setup times are acquired corresponding to the plurality of candidate hold times according to the library and the reference clock. The plurality of candidate setup times are added to the plurality of candidate hold times, respectively, to obtain a plurality of candidate time windows. A target time window is selected that has a minimal time span among the candidate time windows.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

Abstract: A layered decoding architecture with a reduced number of hardware buffers for low-density parity-check (LDPC) decoding by storing a variable-to-check message. When a check node begins a new operation, a variable-to-check message (Q) is added to a check-to-variable message (R) obtained in previous check-node operation to obtain an updated APP value. Then, the R value for the check node in the layer being processed is deducted from the APP value to obtain a variable-to-check message (Q). This variable-to-check message is stored in the memory and inserted into the check node equation to obtain a check-to-variable message. Finally the check-to-variable message obtained in this operation is stored to the check-to-variable message shift register to complete the updating operation for the check node and the variable node for the layer being processed. Improved hardware utilization and fewer buffers, thus achieving a smaller hardware area while retaining the converge speed, is obtained.

Abstract: A layered decoding architecture with a reduced number of hardware buffers for low-density parity-check (LDPC) decoding by storing a variable-to-check message. When a check node begins a new operation, a variable-to-check message (Q) is added to a check-to-variable message (R) obtained in previous check-node operation to obtain an updated APP value. Then, the R value for the check node in the layer being processed is deducted from the APP value to obtain a variable-to-check message (Q). This variable-to-check message is stored in the memory and inserted into the check node equation to obtain a check-to-variable message. Finally the check-to-variable message obtained in this operation is stored to the check-to-variable message shift register to complete the updating operation for the check node and the variable node for the layer being processed. Improved hardware utilization and fewer buffers, thus achieving a smaller hardware area while retaining the converge speed, is obtained.