Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A semiconductor device structure and a formation method are provided. The method includes forming a protruding structure over a substrate. The protruding structure has multiple sacrificial layers and multiple semiconductor layers, and the sacrificial layers and the semiconductor layers have an alternating configuration. The method also includes forming a gate stack to wrap a portion of the protruding structure. The method further includes forming an epitaxial structure abutting edges of the semiconductor layers. The formation of the epitaxial structure includes forming a lower semiconductor portion on a bottom of the recess and forming an upper semiconductor portion over the lower semiconductor portion. The upper semiconductor portion and the lower semiconductor portion are oppositely doped.

Abstract: A semiconductor device includes a gate structure over a substrate, a source region in the substrate, where the source region is adjacent to the gate structure. Additionally, the semiconductor device includes a drain region in the substrate, where the drain region is adjacent to the gate structure. Moreover, the semiconductor device includes a first dislocation in the substrate between the source region and the drain region. Furthermore, the semiconductor device includes a second dislocation in the substrate between the source region and the drain region, where the second dislocation is substantially parallel to the first dislocation.

Abstract: A semiconductor device includes a gate structure over a substrate, a source region in the substrate, where the source region is adjacent to the gate structure. Additionally, the semiconductor device includes a drain region in the substrate, where the drain region is adjacent to the gate structure. Moreover, the semiconductor device includes a first dislocation in the substrate between the source region and the drain region. Furthermore, the semiconductor device includes a second dislocation in the substrate between the source region and the drain region, where the second dislocation is substantially parallel to the first dislocation.

Abstract: A method of forming a semiconductor device includes performing a first pre-amorphous implantation process on a substrate, where the substrate has a gate stack. The method further includes forming a first stress film over the substrate. The method also includes performing a first annealing process on the substrate and the first stress film. The method further includes performing a second pre-amorphous implantation process on the annealed substrate, forming a second stress film over the substrate, and performing a second annealing process on the substrate and the second stress film.

Abstract: A method of fabricating and a semiconductor device with multiple dislocation structures is disclosed. The exemplary semiconductor device includes gate structure overlying a top surface of a semiconductor substrate and a first gate spacer disposed on a sidewall of the gate structure and overlying the top surface of the substrate. The semiconductor device further includes a crystallized semiconductor material overlying the top surface of the semiconductor substrate and adjacent to a sidewall of the first gate spacer. The semiconductor device further includes a second gate spacer disposed on the sidewall of the first gate spacer and overlying the crystallized semiconductor material. The semiconductor device further includes a first stressor region disposed in the semiconductor substrate and a second stressor region disposed in the semiconductor substrate and in the crystallized semiconductor material.

Abstract: A semiconductor device includes a semiconductor substrate; a tunneling layer over the semiconductor substrate, wherein the tunneling layer has a first conduction band; a storage layer over the tunneling layer, wherein the storage layer has a second conduction band; a blocking layer over the storage layer, wherein the blocking layer has a third conduction band; a gate electrode over the blocking layer; and at least one of a first leakage-inhibition layer and a second leakage-inhibition layer. The first leakage-inhibition layer is between the tunneling layer and the storage layer, and has a fourth conduction band lower than the first conduction band. The second leakage-inhibition layer is between the blocking layer and the gate electrode, and has a fifth conduction band lower than the third conduction band.

Abstract: A method of forming a semiconductor device includes performing a first pre-amorphous implantation process on a substrate, where the substrate has a gate stack. The method further includes forming a first stress film over the substrate. The method also includes performing a first annealing process on the substrate and the first stress film. The method further includes performing a second pre-amorphous implantation process on the annealed substrate, forming a second stress film over the substrate, and performing a second annealing process on the substrate and the second stress film.

Abstract: A method of fabricating and a semiconductor device with multiple dislocation structures is disclosed. The exemplary semiconductor device includes gate structure overlying a top surface of a semiconductor substrate and a first gate spacer disposed on a sidewall of the gate structure and overlying the top surface of the substrate. The semiconductor device further includes a crystallized semiconductor material overlying the top surface of the semiconductor substrate and adjacent to a sidewall of the first gate spacer. The semiconductor device further includes a second gate spacer disposed on the sidewall of the first gate spacer and overlying the crystallized semiconductor material. The semiconductor device further includes a first stressor region disposed in the semiconductor substrate and a second stressor region disposed in the semiconductor substrate and in the crystallized semiconductor material.

Abstract: A semiconductor device includes a semiconductor substrate; a tunneling layer over the semiconductor substrate, wherein the tunneling layer has a first conduction band; a storage layer over the tunneling layer, wherein the storage layer has a second conduction band; a blocking layer over the storage layer, wherein the blocking layer has a third conduction band; a gate electrode over the blocking layer; and at least one of a first leakage-inhibition layer and a second leakage-inhibition layer. The first leakage-inhibition layer is between the tunneling layer and the storage layer, and has a fourth conduction band lower than the first conduction band. The second leakage-inhibition layer is between the blocking layer and the gate electrode, and has a fifth conduction band lower than the third conduction band.