Patents by Inventor Hsueh-Ying Chen

Hsueh-Ying Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240160303
    Abstract: A control method of a touchpad is provided. The touchpad has a determination module including a neural network. The determination module is used to determine the type of object. When the user uses the touchpad, the touchpad uses the captured object feature data of the touch object to update the determination module. Therefore, when determining the type of the touch object, the updated determination module can more accurately determine the touch object used by the user, so as to improve the determination accuracy.
    Type: Application
    Filed: October 31, 2023
    Publication date: May 16, 2024
    Applicant: ELAN MICROELECTRONICS CORPORATION
    Inventors: Chang-Ru CHEN, Tuan-Ying CHANG, Hsueh-Wei YANG
  • Publication number: 20240071767
    Abstract: A method includes removing a dummy gate stack to form a trench between gate spacers, depositing a gate dielectric extending into the trench, and performing a first treatment process on the gate dielectric. The first treatment process is performed using a fluorine-containing gas. A first drive-in process is then performed to drive fluorine in the fluorine-containing gas into the gate dielectric. The method further includes performing a second treatment process on the gate dielectric, wherein the second treatment process is performed using the fluorine-containing gas, and performing a second drive-in process to drive fluorine in the fluorine-containing gas into the gate dielectric. After the second drive-in process, conductive layers are formed to fill the trench.
    Type: Application
    Filed: January 6, 2023
    Publication date: February 29, 2024
    Inventors: Hsueh-Ju Chen, Chi On Chui, Tsung-Da Lin, Pei Ying Lai, Chia-Wei Hsu
  • Publication number: 20070181421
    Abstract: This invention provides a sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation. A plurality of plasma sources is provided in a reaction chamber to dissociate at least one reactive gas. The dissociated reactive gas is doped in a film during the deposition of the film so as to control the composition of the film. The property of the film is thus improved. A composite film can be formed on the substrate by the present sputtering system. The present sputtering system is suitable for film deposition on a large-area hard substrate and flexible substrate.
    Type: Application
    Filed: April 6, 2006
    Publication date: August 9, 2007
    Applicant: Industrial Technology Research Institute
    Inventors: Hung-Wen Wei, Hung-Che Ting, Hsueh-Ying Chen
  • Patent number: 5585458
    Abstract: A method for preparing polyether glycol is disclosed. An ester end-capped polyalkylene ether and an alcohol are subjected to alcoholysis at a temperature of 35.degree.-150.degree. C. and a pressure of 1-10 atm in the presence of a mixed metal oxide as a catalyst. The mixed metal oxide includes an alkaline earth metal oxide and at least one component selected from alumina, silica, and zinc oxide.
    Type: Grant
    Filed: June 27, 1995
    Date of Patent: December 17, 1996
    Assignee: Industrial Technology Research Institute
    Inventors: Wen-Fa Lin, Yu-Wen Chen, Jih-Chen Huang, Hsueh-Ying Chen