Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: A concrete cask is used for storing a nuclear spent fuel dry storage canister. The cask has a shape of a vertical cylinder and is able to isolate the stored nuclear spent fuel dry storage canister from the ambient environment and shield the radiation from the stored nuclear spent fuels. An insulating ring is used for improving the dissipation and the transference uniformity of decay heat generated from the stored nuclear spent fuels. The insulating ring thus prevents the temperature of the concrete wall adjacent to the canister from exceeding specified limit. An Air inlet and an air outlet are used to generate a natural convection for moving out the decay heat. Therein, the vertical concrete cask is prevented from being overheated. Thus, the present invention improves the storage safety of a dry storage system.

Abstract: An exhaust gas treatment apparatus comprises an ammonia absorption system and an ammonia conversion system. The ammonia absorption receives ammonia-containing tail gas generated by a semiconductor process, and removes dust from the tail gas, absorbs and decomposes ammonia gas from the tail gas, converts the ammonia gas into aqueous ammonia, and emits the tail gas without the dust and the ammonia to an external environment. The ammonia conversion system receives the ammonia solution from the ammonia absorption system, and converts it into gaseous ammonia, and then converts the gaseous ammonia to produce liquid ammonia by vaporization and cooling-pressurized liquefaction. After that, the liquid ammonia is purified by a purification system to formed hi-purity liquid ammonia.

Abstract: An exhaust gas treatment apparatus comprises an ammonia absorption system and an ammonia conversion system. The ammonia absorption receives ammonia-containing tail gas generated by a semiconductor process, and removes dust from the tail gas, absorbs and decomposes ammonia gas from the tail gas, converts the ammonia gas into aqueous ammonia, and emits the tail gas without the dust and the ammonia to an external environment. The ammonia conversion system receives the ammonia solution from the ammonia absorption system, and converts it into gaseous ammonia, and then converts the gaseous ammonia to produce liquid ammonia by vaporization and cooling-pressurized liquefaction. After that, the liquid ammonia is purified by a purification system to formed hi-purity liquid ammonia.