Patents by Inventor Hsui Ouyang

Hsui Ouyang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming an embedded flash memory device
    Patent number: 7056791
    Abstract: A method of fabricating an embedded flash memory device. A substrate having a memory area is provided. A device is formed on the substrate in the memory area. A conductive layer is formed over the substrate to cover the device in the memory area. A conformal insulating layer is formed on the conductive layer and the substrate. The insulating layer is removed at an edge of the memory area. By anisotropic etching, the insulating layer and part of the conductive layer is removed to form a control gate on the sidewall of the device. Thus, polysilicon residue caused by the conventional control gate process does not occur.
    Type: Grant
    Filed: June 3, 2004
    Date of Patent: June 6, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Der-Shin Shyu, Hung-Cheng Sung, Chen-Ming Huang, Hsui Ouyang
  • Method of forming an embedded flash memory device
    Publication number: 20040248367
    Abstract: A method of fabricating an embedded flash memory device. A substrate having a memory area is provided. A device is formed on the substrate in the memory area. A conductive layer is formed over the substrate to cover the device in the memory area. A conformal insulating layer is formed on the conductive layer and the substrate. The insulating layer is removed at an edge of the memory area. By anisotropic etching, the insulating layer and part of the conductive layer is removed to form a control gate on the sidewall of the device. Thus, polysilicon residue caused by the conventional control gate process does not occur.
    Type: Application
    Filed: June 3, 2004
    Publication date: December 9, 2004
    Inventors: Der-Shin Shyu, Hung-Cheng Sung, Chen-Ming Huang, Hsui Ouyang