Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure over a substrate. A data storage structure overlies the first conductive structure. The data storage structure comprises a first dielectric layer on the first conductive structure and a second dielectric layer on the first dielectric layer. The first dielectric layer comprises a dielectric material and a first dopant having a concentration that changes from a top surface of the first dielectric layer in a direction towards the first conductive structure. A second conductive structure overlies the data storage structure.

Abstract: In some embodiments, the present disclosure relates to an integrated chip fabrication device. The device includes a stealth laser apparatus arranged over a chuck configured to hold a substrate. An infrared camera is arranged over the chuck and configured to detect an alignment mark below the substrate. The alignment mark is used to align the stealth laser apparatus over the chuck. Control circuitry is configured to operate the stealth laser apparatus to form a stealth damage region at a location within the substrate that is determined based upon the alignment mark. The stealth damage region separates an inner region of the substrate from an outer region of the substrate.

Abstract: A multilayer structure, a capacitor structure and an electronic device are provided. The multilayer structure includes a first dielectric layer, a second dielectric layer and an intermediate dielectric layer. The intermediate dielectric layer is disposed between the first dielectric layer and the second dielectric layer. A material of the intermediate dielectric layer is represented by a formula of AxB1-xO, wherein A includes hafnium (Hf), zirconium (Zr), lanthanum (La) or tantalum (Ta), B includes lanthanum (La), aluminum (Al) or tantalum (Ta), A is different from B, O is oxygen, and x is a number less than 1 and greater than 0.

Abstract: Various embodiments of the present disclosure are directed towards a memory device. The memory device has a first transistor having a first source/drain and a second source/drain, where the first source/drain and the second source/drain are disposed in a semiconductor substrate. A dielectric structure is disposed over the semiconductor substrate. A first memory cell is disposed in the dielectric structure and over the semiconductor substrate, where the first memory cell has a first electrode and a second electrode, where the first electrode of the first memory cell is electrically coupled to the first source/drain of the first transistor. A second memory cell is disposed in the dielectric structure and over the semiconductor substrate, where the second memory cell has a first electrode and a second electrode, where the first electrode of the second memory cell is electrically coupled to the second source/drain of the first transistor.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.

Abstract: A memory device includes a field effect transistor and a variable-capacitance capacitor. A gate structure includes a gate dielectric and an intermediate electrode. The variable-capacitance capacitor includes a lower capacitor plate comprising the intermediate electrode, an upper capacitor plate comprising a control gate electrode, and a variable-capacitance node dielectric and including an electrical-field-programmable metal oxide material. The electrical-field-programmable metal oxide material provides a variable effective dielectric constant, and a data bit may be stored as a dielectric state of the variable-capacitance node dielectric in the memory device. The variable-capacitance node dielectric provides reversible electrical field-dependent resistivity modulation, or reversible electrical field-dependent movement of metal atoms therein.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a first bottom electrode layer over a substrate. A ferroelectric switching layer is disposed over the first bottom electrode layer. A first top electrode layer is disposed over the ferroelectric switching layer. A second bottom electrode layer is disposed between the first bottom electrode layer and the ferroelectric switching layer. The second bottom electrode layer is less susceptible to oxidation than the first bottom electrode layer.

Abstract: A method includes forming a bottom electrode layer, and depositing a first ferroelectric layer over the bottom electrode layer. The first ferroelectric layer is amorphous. A second ferroelectric layer is deposited over the first ferroelectric layer, and the second ferroelectric layer has a polycrystalline structure. The method further includes depositing a third ferroelectric layer over the second ferroelectric layer, with the third ferroelectric layer being amorphous, depositing a top electrode layer over the third ferroelectric layer, and patterning the top electrode layer, the third ferroelectric layer, the second ferroelectric layer, the first ferroelectric layer, and the bottom electrode layer to form a Ferroelectric Random Access Memory cell.

Abstract: In some embodiments, the present disclosure relates to a method that includes aligning a stealth laser apparatus over a wafer using an infrared camera coupled to the stealth laser apparatus. The stealth laser apparatus is used to form a stealth damage region within the wafer that is continuously connected around the wafer and separates an inner region from an outer region of the wafer. The stealth damage region is also arranged at a first distance from an edge of the wafer and extends from a first depth to a second depth beneath a top surface of the wafer. Further, the method includes forming a groove in the wafer to separate the outer region from the inner region of the wafer. The outer region of the wafer is removed using a blade, and a top portion of the inner region of the wafer is removed using a grinding apparatus.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip, the method includes forming a bottom electrode over a substrate. A first switching layer is formed on the bottom electrode. The first switching layer comprises a dielectric material doped with a first dopant. A second switching layer is formed over the first switching layer. An atomic percentage of the first dopant in the second switching layer is less than an atomic percentage of the first dopant in the first switching layer. A top electrode is formed over the second switching layer.

Abstract: An interfacial layer is provided that binds a hydrophilic interlayer dielectric to a hydrophobic gap-filling dielectric. The hydrophobic gap-filling dielectric extends over and fill gaps between devices in an array of devices disposed between two metal interconnect layers over a semiconductor substrate and is the product of a flowable CVD process. The interfacial layer provides a hydrophilic upper surface to which the interlayer dielectric adheres. Optionally, the interfacial layer is also the product of a flowable CVD process. Alternatively, the interfacial layer may be silicon nitride or another dielectric that is hydrophilic. The interfacial layer may have a wafer contact angle (WCA) intermediate between a WCA of the hydrophobic dielectric and a WCA of the interlayer dielectric.

Abstract: A pad conditioner for conditioning a polishing surface of a polishing pad includes a conditioning disk, a disk holder, and a disk arm. The conditioning disk includes a substrate plate and at least two abrasive segments. The conditioning disk includes at least one channel by which debris and spent slurry may be evacuated. The abrasive segments are on a surface of the substrate plate, and form at least one channel segment therebetween. Each channel segment extends from about the center of the surface to substantially the outer rim of the substrate plate. The disk holder to which the conditioning disk is mounted includes a through hole. The disk arm to which the conditioning disk is mounted includes an opening in fluid communication with the at least one channel segment via the through hole for evacuating the debris and spent slurry by a vacuum module.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a lower electrode structure disposed over one or more interconnects. The one or more interconnects are arranged within a lower inter-level dielectric (ILD) structure over a substrate. A barrier is arranged along a lower surface of the lower electrode structure. The barrier separates the lower electrode structure from the one or more interconnects. An amorphous initiation layer is over the lower electrode layer and a ferroelectric material is on the amorphous initiation layer. The ferroelectric material has a substantially uniform orthorhombic crystalline phase. An upper electrode is over the ferroelectric material.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a first bottom electrode layer over a substrate. A ferroelectric switching layer is disposed over the first bottom electrode layer. A first top electrode layer is disposed over the ferroelectric switching layer. A second bottom electrode layer is disposed between the first bottom electrode layer and the ferroelectric switching layer. The second bottom electrode layer is less susceptible to oxidation than the first bottom electrode layer.

Abstract: A method of fabricating a semiconductor device includes receiving a device substrate; forming an interconnect structure on a front side of the device substrate; and etching a recess into a backside of the device substrate until a portion of the interconnect structure is exposed. The recess has a recess depth and an edge of the recess is defined by a sidewall of the device substrate. A conductive bond pad is formed in the recess, and a first plurality of layers cover the conductive bond pad, extend along the sidewall of the device substrate, and cover the backside of the device substrate. The first plurality of layers collectively have a first total thickness that is less than the recess depth. A first chemical mechanical planarization is performed to remove portions of the first plurality of layers so remaining portions of the first plurality of layers cover the conductive bond pad.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: A memory device includes a field effect transistor and a variable-capacitance capacitor. A gate structure includes a gate dielectric and an intermediate electrode. The variable-capacitance capacitor includes a lower capacitor plate comprising the intermediate electrode, an upper capacitor plate comprising a control gate electrode, and a variable-capacitance node dielectric and including an electrical-field-programmable metal oxide material. The electrical-field-programmable metal oxide material provides a variable effective dielectric constant, and a data bit may be stored as a dielectric state of the variable-capacitance node dielectric in the memory device. The variable-capacitance node dielectric provides reversible electrical field-dependent resistivity modulation, or reversible electrical field-dependent movement of metal atoms therein.

Abstract: In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.

Abstract: A Deep Trench Isolation (DTI) structure is disclosed. The DTI structures according to embodiments of the present disclosure include a composite passivation layer. In some embodiments, the composite passivation layer includes a hole accumulation layer and a defect repairing layer. The defect repairing layer is disposed between the hole accumulation layer and a semiconductor substrate in which the DTI structure is formed. The defect repairing layer reduces lattice defects in the interface, thus, reducing the density of interface trap (DIT) at the interface. Reduced density of interface trap facilitates strong hole accumulation, thus increasing the flat band voltage. In some embodiments, the hole accumulation layer according to the present disclosure is enhanced by an oxidization treatment.