Patents by Inventor Hsun-Ming CHANG

Hsun-Ming CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device with doped phosphorene and method for doping phosphorene
    Patent number: 11152473
    Abstract: A device includes a phosphide-containing structure, a dopant source layer and a conductive contact. The phosphide-containing structure has a first chemical element in a compound with phosphorus. The dopant source layer is over the phosphide-containing structure and has a second chemical element the same as the first chemical element. The conductive contact is over the dopant source layer.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: October 19, 2021
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Yu-Ming Lin, Chao-Hsin Wu, Hsun-Ming Chang, Samuel C. Pan
  • DEVICE WITH PHOSPHORENE AND FABRICATION THEREOF
    Publication number: 20200279924
    Abstract: A device includes a phosphide-containing structure, a dopant source layer and a conductive contact. The phosphide-containing structure has a first chemical element in a compound with phosphorus. The dopant source layer is over the phosphide-containing structure and has a second chemical element the same as the first chemical element. The conductive contact is over the dopant source layer.
    Type: Application
    Filed: May 15, 2020
    Publication date: September 3, 2020
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Yu-Ming LIN, Chao-Hsin WU, Hsun-Ming CHANG, Samuel C. PAN
  • Device with doped phosphorene and method for doping phosphorene
    Patent number: 10658470
    Abstract: A method includes providing a black phosphorus (BP) layer over a substrate, forming a dopant source layer over the BP layer, annealing the dopant source layer to drive a dopant from the dopant source layer into the BP layer, and forming a conductive contact over the dopant source layer.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: May 19, 2020
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Yu-Ming Lin, Chao-Hsin Wu, Hsun-Ming Chang, Samuel C. Pan
  • DEVICE WITH PHOSPHORENE AND FABRICATION THEREOF
    Publication number: 20190148499
    Abstract: A method includes providing a black phosphorus (BP) layer over a substrate, forming a dopant source layer over the BP layer, annealing the dopant source layer to drive a dopant from the dopant source layer into the BP layer, and forming a conductive contact over the dopant source layer.
    Type: Application
    Filed: April 23, 2018
    Publication date: May 16, 2019
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Yu-Ming LIN, Chao-Hsin WU, Hsun-Ming CHANG, Samuel C. PAN