Abstract: The disclosure provides a switch structure, a method for preparing the same, and an RF chip. The switch structure includes a glass substrate; at least one switch sub-circuit located on the glass substrate and including at least one switch unit, where the switch unit includes a transistor, a resistor and a power supply device, a gate of the transistor is electrically connected to the resistor, the resistor is electrically connected to the power supply device, a first electrode of at least one transistor is electrically connected to an in pad, and a second electrode of at least one transistor is electrically connected to an out pad; a silicon material layer bonded to the glass substrate and including a conducted region, where a portion of the conducted region is configured to electrically connect the gate of the transistor and the resistor.

Abstract: Provided are a method for quantifying an amount of capped messenger RNA (mRNA) in an mRNA sample comprising contacting the mRNA with two or more of a nuclease, an alkaline phosphatase, and a polynucleotide kinase and separating the capped mRNA and the uncapped mRNA occurs using chromatography.

Abstract: An electronic printing system includes an imaging apparatus and an electronic paper that can be detached from each other and can be coupled together to perform one or more functionalities. The imaging apparatus includes a first electrode and a first passivation layer. The electronic paper includes a second electrode, an electro-optic layer on the second electrode, and a second passivation layer on a side of the electro-optic layer away from the second electrode. When the imaging apparatus and the electronic paper are coupled together, the first electrode, the first passivation layer, the second passivation layer, the electro-optic layer, and the second electrode are sequentially arranged in a stacked structure, the first electrode and the second electrode being configured to apply an electric field to the electro-optic layer. The first passivation layer and the second passivation layer can be detached from each other.

Abstract: The present disclosure provides a radio frequency switching unit, a method for manufacturing a radio frequency switching unit and an electronic apparatus, and belongs to the field of radio frequency technology. The radio frequency switching unit of the present disclosure includes: a dielectric substrate, and a first electrode, a second electrode, a metal oxide semiconductor layer, and a barrier layer on the dielectric substrate. The metal oxide semiconductor layer and the barrier layer are both between the first electrode and the second electrode, and the barrier layer is closer to a layer where the first electrode is located than the metal oxide semiconductor layer. The metal oxide semiconductor layer is configured to electrically connect the first electrode to the second electrode through the hollowed-out pattern when an operating voltage is applied between the first electrode and the second electrode.

Abstract: A manufacturing method of a metal grid includes: providing a base substrate; forming a pattern including a first dielectric layer on the base substrate through a patterning process such that the first dielectric layer has a first groove in a lattice shape; forming a second dielectric layer on a side of the first dielectric layer away from the base substrate such that the second dielectric layer is deposited at least on a sidewall of the first groove to form a second groove in a lattice shape; and forming a metal material in the second groove, and removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, to form a metal grid.

Abstract: An inorganic light-emitting diode substrate includes: a base, a plurality of epitaxial layer structures disposed on the base, a passivation layer, and a plurality of second electrodes disposed on a side of the passivation layer away from the base. The base includes a base substrate and a plurality of first electrodes disposed on the base substrate. The plurality of epitaxial layer structures are spaced apart, and each first electrode is coupled to one epitaxial layer structure. The passivation layer is made of photoresist. The passivation layer covers surfaces, away from the base, of the plurality of epitaxial layer structures, and fills gaps between the plurality of epitaxial layer structures. The passivation layer has a plurality of via holes, and each second electrode is coupled to one epitaxial layer structure through at least one via hole.

Abstract: A method of patterning a light-emitting layer and a method of manufacturing a light-emitting diode device are provided, including: providing a substrate; forming a first electrode layer on the substrate; forming a sacrificial layer on the first electrode layer; patterning the sacrificial layer to remove the sacrificial layer in a first region of the substrate and retain the sacrificial layer in a second region of the substrate, the first electrode layer is at least partially located in the first region; forming a first carrier auxiliary layer in the first region and the second region; forming a light-emitting layer on the first carrier auxiliary layer, and removing the retained sacrificial layer in the second region and the first carrier auxiliary layer and the light-emitting layer covering the retained sacrificial layer, and retaining the first carrier auxiliary layer and the light-emitting layer in the first region, to pattern the light-emitting layer.

Abstract: A thin film transistor includes: a substrate; a gate electrode; an active layer including a first active pattern and a second active pattern, where the first active pattern includes a first active sub-pattern, the first active sub-pattern comprises a first active region and a first source-drain contact region, the first source-drain contact region is connected to the second active pattern through the first active region, the first active pattern includes a material of at least one of a metal oxide semiconductor, low-temperature polycrystalline silicon, and amorphous silicon, and the second active pattern includes a material of a semiconductor carbon nanotube; a source electrode and a drain electrode spaced apart from each other and connected to the active layer; and a passivation layer on a side of the second active pattern distal to the substrate. A method for manufacturing the thin film transistor and a circuit are further provided.

Abstract: Provided are a battery assembly and a manufacturing method thereof. the battery assembly includes: an anode unit, which includes an anode current collector and an anode on the anode current collector, an electrolyte layer on a side of the anode remote from the anode current collector; and a cathode unit on a side of the electrolyte layer remote from the anode; the battery assembly further includes: an interface layer formed at a contact interface between the anode current collector and the anode.

Abstract: Provided in the present disclosure are a photoelectric detector, a detection substrate and a manufacturing method therefor, and a detection apparatus. The photoelectric detector comprises a first electrode; a semiconductor layer, which is located on one side of the first electrode, wherein a Schottky junction is provided between the semiconductor layer and the first electrode; an intrinsic absorption layer, which is located on the side of the semiconductor layer that is away from the first electrode; and a second electrode, which is arranged opposite the first electrode, wherein the second electrode is arranged adjacent to one of the intrinsic absorption layer and the semiconductor layer.

Abstract: A light-emitting diode includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and a barrier layer disposed on at least part of a side face of at least one of the first semiconductor layer and the second semiconductor layer. The barrier layer is configured to form a charge depletion region between the barrier layer and the at least part of the side face.

Abstract: A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.

Abstract: A light-emitting diode includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and a barrier layer disposed on at least part of a side face of at least one of the first semiconductor layer and the second semiconductor layer. The barrier layer is configured to form a charge depletion region between the barrier layer and the at least part of the side face.

Abstract: A robotic trolley collection system and methods for automatically collecting baggage/luggage trolleys are provided. The system includes a differential-driven mobile base; a manipulator mounted on the differential-driven mobile base for forking a trolley, having a structure same as a head portion of the trolley; a sensory and measurement assembly for providing sensing and measurement dataflow; and a main processing case for processing the sensing and measurement dataflow provided by the sensory and measurement assembly and for controlling the differential-driven mobile base, the manipulator, and the sensory and measurement assembly. The method includes localizing and mapping the robotic trolley collection system; detecting an idle trolley to be collected and estimating pose of the idle trolley; visually servoing control of the robotic trolley collection system; and issuing motion control commands to the robotic trolley collection system for automatically collecting the idle trolley.

Abstract: A method of patterning a light-emitting layer and a method of manufacturing a light-emitting diode device are provided, including: providing a substrate; forming a first electrode layer on the substrate; forming a sacrificial layer on the first electrode layer; patterning the sacrificial layer to remove the sacrificial layer in a first region of the substrate and retain the sacrificial layer in a second region of the substrate, the first electrode layer is at least partially located in the first region; forming a first carrier auxiliary layer in the first region and the second region; forming a light-emitting layer on the first carrier auxiliary layer, and removing the retained sacrificial layer in the second region and the first carrier auxiliary layer and the light-emitting layer covering the retained sacrificial layer, and retaining the first carrier auxiliary layer and the light-emitting layer in the first region, to pattern the light-emitting layer.

Abstract: The present disclosure provides a piezoelectric sensor, a pressure detecting device, their manufacturing methods and a detection method. The piezoelectric sensor comprises a thin film transistor located on a substrate and comprising an active layer, and a piezoelectric layer that is in contact with the active layer of the thin film transistor.

Abstract: The present disclosure provides a flat panel detection substrate, a fabricating method thereof and a flat panel detector. The flat panel detection substrate according to the present disclosure includes a base substrate; a bias electrode and a sense electrode on the base substrate; and a semiconductor layer over the bias electrode and the sense electrode, the semiconductor layer having a thickness greater than 100 nm.

Abstract: An inorganic light-emitting diode substrate includes: a base, a plurality of epitaxial layer structures disposed on the base, a passivation layer, and a plurality of second electrodes disposed on a side of the passivation layer away from the base. The base includes a base substrate and a plurality of first electrodes disposed on the base substrate. The plurality of epitaxial layer structures are spaced apart, and each first electrode is coupled to one epitaxial layer structure. The passivation layer is made of photoresist. The passivation layer covers surfaces, away from the base, of the plurality of epitaxial layer structures, and fills gaps between the plurality of epitaxial layer structures. The passivation layer has a plurality of via holes, and each second electrode is coupled to one epitaxial layer structure through at least one via hole.

Abstract: A thin film transistor, a manufacturing method thereof, and an electronic device are provided. The thin film transistor comprises a passivation layer disposed on the active layer, wherein a step of forming the passivation layer includes forming an insulating first metal oxide layer, the first metal oxide layer being capable of moving a Fermi level of the active layer to a side of a forbidden band to a valence band.

Abstract: A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.