Abstract: A liquid crystal display has a pad structure. The pad structure includes at least one pad formed on a substrate, an insulating film formed on the pad, and at least one conductive layer connected to the pad through contact holes defined through the insulating film. The insulating film covers side surfaces of the pad and a portion of the substrate adjacent to the side surfaces of the pad.

Abstract: A liquid crystal display has a pad structure. The pad structure includes at least one pad formed on a substrate, an insulating film formed on the pad, and at least one conductive layer connected to the pad through contact holes defined through the insulating film. The insulating film covers side surfaces of the pad and a portion of the substrate adjacent to the side surfaces of the pad.

Abstract: A liquid crystal display has a pad structure. The pad structure includes at least one pad formed on a substrate, an insulating film formed on the pad, and at least one conductive layer connected to the pad through contact holes defined through the insulating film. The insulating film covers side surfaces of the pad and a portion of the substrate adjacent to the side surfaces of the pad.

Abstract: A liquid crystal display has a pad structure. The pad structure includes at least one pad formed on a substrate, an insulating film formed on the pad, and at least one conductive layer connected to the pad through contact holes defined through the insulating film. The insulating film covers side surfaces of the pad and a portion of the substrate adjacent to the side surfaces of the pad.

Abstract: A liquid crystal display device and a method of fabricating the same are disclosed in the present invention. More specifically, the method includes the steps forming a gate line on the first substrate sequentially forming a first insulating layer, an amorphous silicon layer, and a metal layer on the first substrate, patterning the metal layer to form a data line, forming a second insulating layer on the data line, patterning the second insulating layer and the amorphous silicon layer to form a passivation layer and an active layer, respectively, forming a pixel electrode at a pixel region defined by the gate and data lines, assembling the first substrate and the second substrate having a black matrix thereon, wherein the black matrix vertically overlaps at least one boundary line defined by different exposures during step-and-repeat exposure processes; and forming a liquid crystal layer between the first and second substrates.

Abstract: A TFT array substrate has a PAI pattern, and the PAI pattern has an over-etched portion of the pure amorphous silicon layer. This over-etched portion prevents a short between the pixel electrode and the pure amorphous silicon layer (i.e., the active layer).

Abstract: A liquid crystal display device includes a substrate, a thin film transistor disposed on the substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode, a gate line arranged in a first direction on the substrate, the gate line connected with the gate electrode of the thin film transistor, a gate insulation layer disposed on the substrate and covering the gate line and the gate electrode of the thin film transistor, an intrinsic semiconductor layer disposed on the gate insulation layer, an extrinsic semiconductor layer disposed on the intrinsic semiconductor layer, a data line arranged in a second direction substantially perpendicular to the first direction disposed on the extrinsic semiconductor layer, the data line connected to the source electrode of the thin film transistor, first and second dummy metal layers formed over the gate line and arranged on opposite sides of the data line, a passivation layer covering the data line, the source electrode, the drain el

Abstract: A method of fabricating a liquid crystal display device includes the steps of forming a gate electrode on a transparent substrate; forming a gate insulating film, an active layer and an ohmic contact layer on the transparent substrate to cover the gate electrode; forming a source electrode and a drain electrode on the ohmic contact layer and patterning the drain electrode to form an L-shaped portion and a plurality of protrusions; forming a protective layer on the source and drain electrodes such that side surfaces of the protective layer, the drain electrode, the ohmic contact layer and the active layer are exposed; and forming a pixel electrode on the protective layer to electrically contact the side surface of the drain electrode.

Abstract: A liquid crystal display device includes dummy patterns formed between gate links and between data links. The gate links and data links are coated with a sealant to obtain the same height as a liquid crystal area at the opposite side thereof through the dummy patterns, providing a uniform cell gap.

Abstract: A liquid crystal display device and a method of fabricating the same are disclosed in the present invention. More specifically, the method includes the steps forming a gate line on the first substrate sequentially forming a first insulating layer, an amorphous silicon layer, and a metal layer on the first substrate, patterning the metal layer to form a data line, forming a second insulating layer on the data line, patterning the second insulating layer and the amorphous silicon layer to form a passivation layer and an active layer, respectively, forming a pixel electrode at a pixel region defined by the gate and data lines, assembling the first substrate and the second substrate having a black matrix thereon, wherein the black matrix vertically overlaps at least one boundary line defined by different exposures during step-and-repeat exposure processes; and forming a liquid crystal layer between the first and second substrates.

Abstract: A liquid crystal display device and a method of fabricating the same are disclosed in the present invention. More specifically, the method includes the steps forming a gate line on the first substrate sequentially forming a first insulating layer, an amorphous silicon layer, and a metal layer on the first substrate, patterning the metal layer to form a data line, forming a second insulating layer on the data line, patterning the second insulating layer and the amorphous silicon layer to form a passivation layer and an active layer, respectively, forming a pixel electrode at a pixel region defined by the gate and data lines, assembling the first substrate and the second substrate having a black matrix thereon, wherein the black matrix vertically overlaps at least one boundary line defined by different exposures during step-and-repeat exposure processes; and forming a liquid crystal layer between the first and second substrates.

Abstract: An array substrate for use in a liquid crystal display device is fabricated by the steps of forming a first metal layer on a substrate, patterning the first metal layer to form a gate line, a gate electrode, a gate pad, a first shorting bar, and a second shorting bar, forming a gate insulation layer, a pure amorphous silicon layer, a doped amorphous silicon layer and a second metal layer to cover the patterned first metal layer, patterning the second metal layer and the doped amorphous silicon layer to form first, second and third through-holes and first and second grooves to expose a portion of the pure amorphous silicon layer, the first and second grooves creating an isolated portions of the second metal layer, forming a passivation layer to cover the patterned second metal layer, forming a source electrode, a drain electrode, a data line, a data pad, an insulating segment, and first, second and third contact holes, and forming a pixel electrode, a first connector and a second connector of a transparent con

Abstract: An array substrate for use in a liquid crystal display device is fabricated by the steps of forming a first metal layer on a substrate, patterning the first metal layer to form a gate line, a gate electrode, a gate pad, a first shorting bar, and a second shorting bar, forming a gate insulation layer, a pure amorphous silicon layer, a doped amorphous silicon layer and a second metal layer to cover the patterned first metal layer, patterning the second metal layer and the doped amorphous silicon layer to form first, second and third through-holes and first and second grooves to expose a portion of the pure amorphous silicon layer, the first and second grooves creating an isolated portions of the second metal layer, forming a passivation layer to cover the patterned second metal layer, forming a source electrode, a drain electrode, a data line, a data pad, an insulating segment, and first, second and third contact holes, and forming a pixel electrode, a first connector and a second connector of a transparent con

Abstract: A TFT array substrate has a PAI pattern, and the PAI pattern has an over-etched portion of the pure amorphous silicon layer. This over-etched portion prevents a short between the pixel electrode and the pure amorphous silicon layer (i.e., the active layer).

Abstract: A method of fabricating a liquid crystal display device includes the steps of forming a gate electrode on a transparent substrate; forming a gate insulating film, an active layer and an ohmic contact layer on the transparent substrate to cover the gate electrode; forming a source electrode and a drain electrode on the ohmic contact layer and patterning the drain electrode to form an L-shaped portion and a plurality of protrusions; forming a protective layer on the source and drain electrodes such that side surfaces of the protective layer, the drain electrode, the ohmic contact layer and the active layer are exposed; and forming a pixel electrode on the protective layer to electrically contact the side surface of the drain electrode.

Abstract: A method is disclosed for manufacturing an array substrate for use in a display device. The method includes providing a base substrate, forming a gate line on the base substrate using a first mask, forming sequentially a gate insulating layer, a semiconductor layer and a metal layer over the base substrate and the gate line, patterning the metal layer using a second mask to form a data line and a metal portion on the semiconductor layer, forming a protection layer over the data line, the metal portion and the semiconductor layer, forming a photoresist pattern on the protection layer over the data line using a third mask to define a first structure, applying at least two separate etching steps on the first structure to leave the gate insulating layer of a uniform thickness over the gate line and to pattern layers below the photoresist pattern, and forming a pixel electrode over a portion of the gate insulating layer on the gate line using a fourth mask.

Abstract: An array substrate for use in a liquid crystal display device is fabricated by the steps of forming a first metal layer on a substrate, patterning the first metal layer to form a gate line, a gate electrode, a gate pad, a first shorting bar, and a second shorting bar, forming a gate insulation layer, a pure amorphous silicon layer, a doped amorphous silicon layer and a second metal layer to cover the patterned first metal layer, patterning the second metal layer and the doped amorphous silicon layer to form first, second and third through-holes and first and second grooves to expose a portion of the pure amorphous silicon layer, the first and second grooves creating an isolated portions of the second metal layer, forming a passivation layer to cover the patterned second metal layer, forming a source electrode, a drain electrode, a data line, a data pad, an insulating segment, and first, second and third contact holes, and forming a pixel electrode, a first connector and a second connector of a transparent con

Abstract: A TFT array substrate has a PAI pattern, and the PAI pattern has an over-etched portion of the pure amorphous silicon layer. This over-etched portion prevents a short between the pixel electrode and the pure amorphous silicon layer (i.e., the active layer). The over-etched portion also enables the aperture ratio to increase.

Abstract: A liquid crystal display device includes a transparent substrate, a gate electrode disposed on the transparent substrate, a gate insulating film disposed on the transparent substrate and covering the gate electrode, an active layer disposed on the gate insulating film, an ohmic contact layer disposed on the active layer, a source electrode disposed on the ohmic contact layer and at one side of the gate electrode, a drain electrode disposed on the ohmic contact layer and at another side of the gate electrode, the drain electrode including an L-shaped portion and a plurality of protrusions, a protective layer disposed on the active layer covering upper surfaces of the source electrode and the drain electrode, and a pixel electrode disposed on the protective layer and electrically contacting a side surface of the drain electrode.

Abstract: A liquid crystal display device and a fabricating method thereof wherein four masks are used so as to reduce a process. In the device, a gate electrode is formed on a transparent substrate. A gate insulating film is formed on the transparent substrate to cover the gate electrode. An active layer is provided at a portion corresponding to the gate electrode on the gate insulating film. Source and drain electrodes are intervened by an ohmic contact layer on the active layer. A contact portion is connected to and extended from a portion of the drain electrode opposed to the source electrode and has an exposed side surface. A passivation layer is formed on the active layer in such a manner to cover the source and drain electrodes, but to expose the side surface of the contact portion. A pixel electrode is formed on the gate insulating film in such a manner to contact the exposed side surface of the contact portion.