Patents by Inventor Hu-Young Jeong

Hu-Young Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • QUANTUM DOT WITH METASTABLE PHASE AND MANUFACTURING METHOD FOR THE SAME
    Publication number: 20200190403
    Abstract: The present invention relates to a quantum dot containing a metastable phase which contains at least partly a crystal structure at quantum dot synthesis temperature at room temperature.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 18, 2020
    Inventors: Keonjae Lee, Duk Young Jeon, Hu Young Jeong, Tae Hong Im, Chulhee Lee
  • Graphene oxide memory devices and method of fabricating the same
    Publication number: 20120080656
    Abstract: A graphene oxide memory device includes a substrate, a lower electrode disposed on the substrate, an electron channel layer disposed on the lower electrode by using a graphene oxide, and an upper electrode disposed on the electron channel layer.
    Type: Application
    Filed: September 28, 2011
    Publication date: April 5, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sung Yool Choi, Jong Yun Kim, Hu Young Jeong
  • NON-VOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME
    Publication number: 20100155684
    Abstract: Provided are a non-volatile memory device and a method of forming the non-volatile memory device. The non-volatile memory device includes a substrate, a lower electrode on the substrate, a diffusion barrier preventing the diffusion of a space charge on the lower electrode, a charge storage layer having a space charge limited characteristic on the diffusion barrier, and an upper electrode on the charge storage layer.
    Type: Application
    Filed: June 5, 2009
    Publication date: June 24, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sung-Yool CHOI, Hu-Young Jeong, In-Kyu You, Kyoung-Ik Cho
  • MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20100065803
    Abstract: Provided is a resistance variable non-volatile memory device using a trap-controlled Space Charge Limited Current (SCLC), and a manufacturing method thereof. The memory device includes a bottom electrode; an inter-electrode dielectric thin film diffusion prevention film formed on the bottom electrode; a dielectric thin film formed on the inter-electrode dielectric thin film diffusion prevention film and having a plurality of layers with different charge trap densities; and a top electrode formed on the dielectric thin film.
    Type: Application
    Filed: November 28, 2007
    Publication date: March 18, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sung-Yool Choi, Min-Ki Ryu, Hu-Young Jeong