Patents by Inventor Hu Zheng

Hu Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11124475
    Abstract: A hydrogen sulfide donor in an organic salt form and a preparation method thereof. The hydrogen sulfide donor exists as a salt formed by organic compounds with an alkaline motif and hydrogen sulfide with weak acidity. The hydrogen sulfide donor features with a simple structure, and an easy preparation method. Moreover, hydrogen sulfide donors in different forms can be prepared according to research and development needs. After the hydrogen sulfide donor enters an organism, the process of in vivo dissociation and hydrogen sulfide supply is simple, rapid, and effective, and there is no requirement for enzyme or any other complicated condition, and thus, the hydrogen sulfide donor has a great application prospect and value.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: September 21, 2021
    Assignee: CHENGDU KAOENSI SCIENCE AND TECHNOLOGY CO., LTD.
    Inventors: Hu Zheng, Lingling Weng
  • Publication number: 20200199067
    Abstract: A hydrogen sulfide donor in an organic salt form and a preparation method thereof. The hydrogen sulfide donor exists as a salt formed by organic compounds with an alkaline motif and hydrogen sulfide with weak acidity. The hydrogen sulfide donor features with a simple structure, and an easy preparation method. Moreover, hydrogen sulfide donors in different forms can be prepared according to research and development needs. After the hydrogen sulfide donor enters an organism, the process of in vivo dissociation and hydrogen sulfide supply is simple, rapid, and effective, and there is no requirement for enzyme or any other complicated condition, and thus, the hydrogen sulfide donor has a great application prospect and value.
    Type: Application
    Filed: March 15, 2018
    Publication date: June 25, 2020
    Inventors: Hu ZHENG, Lingling WENG
  • Patent number: 10658489
    Abstract: A semiconductor device and a fabrication method are provided. The fabrication method includes providing a gate structure on a substrate and a first protective layers on the gate structure; forming an initial sidewall spacer on a sidewall of each of the gate structure and the first protective layer; forming a first sidewall spacer on a sidewall of the initial sidewall spacer, the first and initial sidewall spacers being made of different materials; forming a second sidewall spacer by removing a portion of the initial sidewall spacer, leaving a trench formed above the second sidewall spacer and between the first sidewall spacer and the first protective layer; and forming a second protective layer in the trench, the second protective layer and the first sidewall spacer being made of a same material. The second sidewall spacer has a top surface higher than or level with a top surface of the gate structure.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: May 19, 2020
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Er Hu Zheng, Lu Jun Zou
  • Patent number: 10573551
    Abstract: An etching method and a fabrication method of semiconductor structures are provided. The etching method includes forming trenches in a to-be-etched structure, and forming a dielectric layer in the trenches. The etching method further includes etching the dielectric layer in the trenches by an etching process, and controlling at least an etching temperature of the etching process while a polymer is formed on side surface of the to-be-etched structure. During the etching process of the dielectric layer, the polymer undergoes a deposition stage and a removal stage. The deposition stage has a deposition rate of the polymer greater than an etch rate of the polymer, and the removal stage has the deposition rate of the polymer less than the etch rate of the polymer.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: February 25, 2020
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Min Da Hu, Er Hu Zheng, Cheng Long Zhang, Hai Yang Zhang
  • Publication number: 20180261610
    Abstract: A semiconductor device and a fabrication method are provided. The fabrication method includes providing a gate structure on a substrate and a first protective layers on the gate structure; forming an initial sidewall spacer on a sidewall of each of the gate structure and the first protective layer; forming a first sidewall spacer on a sidewall of the initial sidewall spacer, the first and initial sidewall spacers being made of different materials; forming a second sidewall spacer by removing a portion of the initial sidewall spacer, leaving a trench formed above the second sidewall spacer and between the first sidewall spacer and the first protective layer; and forming a second protective layer in the trench, the second protective layer and the first sidewall spacer being made of a same material. The second sidewall spacer has a top surface higher than or level with a top surface of the gate structure.
    Type: Application
    Filed: March 6, 2018
    Publication date: September 13, 2018
    Inventors: Er Hu ZHENG, Lu Jun ZOU
  • Publication number: 20170294343
    Abstract: An etching method and a fabrication method of semiconductor structures are provided. The etching method includes forming trenches in a to-be-etched structure, and forming a dielectric layer in the trenches. The etching method further includes etching the dielectric layer in the trenches by an etching process, and controlling at least an etching temperature of the etching process while a polymer is formed on side surface of the to-be-etched structure. During the etching process of the dielectric layer, the polymer undergoes a deposition stage and a removal stage. The deposition stage has a deposition rate of the polymer greater than an etch rate of the polymer, and the removal stage has the deposition rate of the polymer less than the etch rate of the polymer.
    Type: Application
    Filed: March 31, 2017
    Publication date: October 12, 2017
    Inventors: Min Da HU, Er Hu ZHENG, Cheng Long ZHANG, Hai Yang ZHANG
  • Patent number: 6028207
    Abstract: A compound represented by the following formula (I):X--Y--Z (I)where Y is represented by the following formulae: ##STR1## X is a monovalent group of a tetracycline type compounds and Z is a monoent group of a steroid type compound such as estrogen.The compound can concentrate on the bone tissue and has bone resorption inhibition/ossification promotion functions.
    Type: Grant
    Filed: July 3, 1997
    Date of Patent: February 22, 2000
    Assignees: Iskra Industry Co., Ltd., Institute of Pharmacology, West China University of Medical Sciences
    Inventors: Hu Zheng, Lingling Weng
  • Patent number: 5760214
    Abstract: A compound represented by the following formula (I):X--Y--Z (I)?where Y is represented by the following formula (III): ##STR1## X is a monovalent group of a tetracycline type compound, and Z is a monovalent group of a steroid type compound such as estrogen!. The compound can concentrate on the bone tissue and has a bone resorption inhibition/ossification promotion functions.
    Type: Grant
    Filed: March 1, 1995
    Date of Patent: June 2, 1998
    Assignees: Iskra Industry Co., Ltd., Institute of Pharmacology, West China Univ. of Medical Sciences
    Inventors: Hu Zheng, Lingling Weng
  • Patent number: 5698542
    Abstract: A pharmaceutical composition comprising a compound represented by the following formula (I):X--Y--Z (I)?where Y is represented by the following formula (III): ##STR1## X is a monovalent group of a tetracycline type compound, and Z is a monovalent group of asteroid type compound such as estrogen!.The compound can concentrate on the bone tissue and has a bone resorption inhibition/ossification promotion functions.
    Type: Grant
    Filed: August 29, 1995
    Date of Patent: December 16, 1997
    Assignees: Iskra Industry Co., Ltd., Institute of Pharmacology, West China Univ. of Medical Sciences
    Inventors: Hu Zheng, Lingling Weng