Abstract: A display device, including a backlight module (1). The backlight module (1) includes an optical film layer (2), the optical film layer (2) includes at least two diffusers (21) stacked in sequence, and the haze of each diffuser (21) is 80%-99%. The backlight module (1) further includes an LED light source (3), and the optical band of the LED light source (3) is greater than 455 nm. The display device further includes a cover plate (5) and at least one anti-reflection layer (7), the cover plate (5) is provided with an atomization layer (51), and the anti-reflection layer (7) is located on the side of the cover plate (5) facing away from a display panel (4).

Abstract: A tool set includes a tool holder, a tool and a tool rack. The tool has a groove unit. The tool holder has a latch unit that engages the groove unit. The tool rack includes a rack body and a blocking member. When the tool holder is moved away from the rack body after the tool is moved into the rack body by the tool holder and after the blocking member moves to a blocking position, the tool is blocked by the blocking member so that the latch unit is separated from the groove unit and that the tool holder is separated from the tool.

Abstract: A container feeding device includes a casing and first and second latch members. The casing defines a lower retaining space for receiving a plurality of containers that are stacked on one another. The first latch member is operable to enter the lower retaining space for supporting a bottommost container, or leave the lower retaining space to release the bottommost container. The second latch member enters the lower retaining space to support a second bottommost container when the bottommost container is released by the first latch member.

Abstract: This application provides a current collecting member, a secondary battery, and a fabrication method. The secondary battery includes an electrode assembly, a housing, a top cover assembly and current collecting members. The electrode assembly includes a main body portion and a first tab extending from an end of the main body portion along a transverse direction. The top cover assembly includes a top cover plate and a first electrode terminal disposed on the top cover plate connected to the housing. The current collecting member is connected to the first tab and the first electrode terminal. The current collecting member includes a substrate and a support plate, the substrate being provided at a side of the main body portion along a transverse direction, the support plate extending from an end part of the substrate in a longitudinal direction, and the first tab being connected to the support plate.

Abstract: A mounting frame for being mounted with either one of first and second screwdrivers, includes a main frame, a mounting seat, and first and second mounting plates. The mounting seat has a plate attachment hole set. The first mounting plate has a first seat attachment hole set operable to be connected to the plate attachment hole set, and a first driver attachment hole set for the first screwdriver to be attached thereto. The second mounting plate has a second seat attachment hole set operable to be connected to the plate attachment hole set, and a second driver attachment hole set for the second screwdriver to be attached thereto.

Abstract: This application provides a method for issuing a digital certificate performed by a digital certificate issuing center that includes a public-private key generation module and an authentication module. The method includes: receiving a public-private key request from a node in a blockchain network; generating a public key and a private key of the node by using the public-private key generation module, and transmitting the public and private keys to the node; receiving the public key of the node and registration information of the node, and authenticating the registration information by using the authentication module; and generating, in accordance with a determination that the authentication succeeds, a digital certificate of the node by using the authentication module, and transmitting the digital certificate to the node. The embodiments of this application can improve the probative value of an issued digital certificate, thereby improving the security of data exchange in a blockchain network.

Abstract: A hydrogen sulfide donor in an organic salt form and a preparation method thereof. The hydrogen sulfide donor exists as a salt formed by organic compounds with an alkaline motif and hydrogen sulfide with weak acidity. The hydrogen sulfide donor features with a simple structure, and an easy preparation method. Moreover, hydrogen sulfide donors in different forms can be prepared according to research and development needs. After the hydrogen sulfide donor enters an organism, the process of in vivo dissociation and hydrogen sulfide supply is simple, rapid, and effective, and there is no requirement for enzyme or any other complicated condition, and thus, the hydrogen sulfide donor has a great application prospect and value.

Abstract: A hydrogen sulfide donor in an organic salt form and a preparation method thereof. The hydrogen sulfide donor exists as a salt formed by organic compounds with an alkaline motif and hydrogen sulfide with weak acidity. The hydrogen sulfide donor features with a simple structure, and an easy preparation method. Moreover, hydrogen sulfide donors in different forms can be prepared according to research and development needs. After the hydrogen sulfide donor enters an organism, the process of in vivo dissociation and hydrogen sulfide supply is simple, rapid, and effective, and there is no requirement for enzyme or any other complicated condition, and thus, the hydrogen sulfide donor has a great application prospect and value.

Abstract: A semiconductor device and a fabrication method are provided. The fabrication method includes providing a gate structure on a substrate and a first protective layers on the gate structure; forming an initial sidewall spacer on a sidewall of each of the gate structure and the first protective layer; forming a first sidewall spacer on a sidewall of the initial sidewall spacer, the first and initial sidewall spacers being made of different materials; forming a second sidewall spacer by removing a portion of the initial sidewall spacer, leaving a trench formed above the second sidewall spacer and between the first sidewall spacer and the first protective layer; and forming a second protective layer in the trench, the second protective layer and the first sidewall spacer being made of a same material. The second sidewall spacer has a top surface higher than or level with a top surface of the gate structure.

Abstract: An etching method and a fabrication method of semiconductor structures are provided. The etching method includes forming trenches in a to-be-etched structure, and forming a dielectric layer in the trenches. The etching method further includes etching the dielectric layer in the trenches by an etching process, and controlling at least an etching temperature of the etching process while a polymer is formed on side surface of the to-be-etched structure. During the etching process of the dielectric layer, the polymer undergoes a deposition stage and a removal stage. The deposition stage has a deposition rate of the polymer greater than an etch rate of the polymer, and the removal stage has the deposition rate of the polymer less than the etch rate of the polymer.

Abstract: A semiconductor device and a fabrication method are provided. The fabrication method includes providing a gate structure on a substrate and a first protective layers on the gate structure; forming an initial sidewall spacer on a sidewall of each of the gate structure and the first protective layer; forming a first sidewall spacer on a sidewall of the initial sidewall spacer, the first and initial sidewall spacers being made of different materials; forming a second sidewall spacer by removing a portion of the initial sidewall spacer, leaving a trench formed above the second sidewall spacer and between the first sidewall spacer and the first protective layer; and forming a second protective layer in the trench, the second protective layer and the first sidewall spacer being made of a same material. The second sidewall spacer has a top surface higher than or level with a top surface of the gate structure.

Abstract: An etching method and a fabrication method of semiconductor structures are provided. The etching method includes forming trenches in a to-be-etched structure, and forming a dielectric layer in the trenches. The etching method further includes etching the dielectric layer in the trenches by an etching process, and controlling at least an etching temperature of the etching process while a polymer is formed on side surface of the to-be-etched structure. During the etching process of the dielectric layer, the polymer undergoes a deposition stage and a removal stage. The deposition stage has a deposition rate of the polymer greater than an etch rate of the polymer, and the removal stage has the deposition rate of the polymer less than the etch rate of the polymer.

Abstract: A compound represented by the following formula (I):X--Y--Z (I)where Y is represented by the following formulae: ##STR1## X is a monovalent group of a tetracycline type compounds and Z is a monoent group of a steroid type compound such as estrogen.The compound can concentrate on the bone tissue and has bone resorption inhibition/ossification promotion functions.

Abstract: A compound represented by the following formula (I):X--Y--Z (I)?where Y is represented by the following formula (III): ##STR1## X is a monovalent group of a tetracycline type compound, and Z is a monovalent group of a steroid type compound such as estrogen!. The compound can concentrate on the bone tissue and has a bone resorption inhibition/ossification promotion functions.

Abstract: A pharmaceutical composition comprising a compound represented by the following formula (I):X--Y--Z (I)?where Y is represented by the following formula (III): ##STR1## X is a monovalent group of a tetracycline type compound, and Z is a monovalent group of asteroid type compound such as estrogen!.The compound can concentrate on the bone tissue and has a bone resorption inhibition/ossification promotion functions.