Abstract: A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.

Abstract: A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.

Abstract: A magnetic read sensor having improved magnetic performance and robustness. The magnetic sensor includes a magnetic free layer and a magnetic pinned layer structure. The magnetic pinned layer structure includes first and second magnetic layers separated from one another by a non-magnetic coupling layer. The second magnetic layer of the magnetic pinned layer structure includes a layer of CoFeBTa, which prevents the diffusion of atoms and also promotes a desired BCC crystalline grain growth. The magnetic free layer structure can also include such a CoFeBTa layer for further prevention of atomic diffusion and further promotion of a desired BCC grain growth.

Abstract: A magnetic read sensor having improved magnetic performance and robustness. The magnetic sensor includes a magnetic free layer and a magnetic pinned layer structure. The magnetic pinned layer structure includes first and second magnetic layers separated from one another by a non-magnetic coupling layer. The second magnetic layer of the magnetic pinned layer structure includes a layer of CoFeBTa, which prevents the diffusion of atoms and also promotes a desired BCC crystalline grain growth. The magnetic free layer structure can also include such a CoFeBTa layer for further prevention of atomic diffusion and further promotion of a desired BCC grain growth.

Abstract: A method of manufacturing a GMR, TMR or CPP GMR sensor having a smooth interface between magnetic and non-magnetic layers to improve sensor performance by exposing a layer to a low energy ion beam prior to depositing a subsequent layer.

Abstract: A method for improving hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a first layer of silicon and a second layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.

Abstract: An apparatus having improved hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a layer of silicon and a layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.