Patents by Inventor Hua Ai
Hua Ai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9297917Abstract: The present disclosure relates to methods and apparatuses for reducing propagation delay uncertainty while conducting a survey. The apparatus includes a plurality of nodes along a communication path configured to allow communication between nodes with only one clock domain boundary crossing. Each node may include a clock, a memory, and a processor. The plurality of nodes is arranged in a linear topology. The linear topology may have first and second nodes on the ends of the line. The method may include reducing propagation delay uncertainty using at least one time marker transmitted to each of the plurality of nodes without crossing a clock domain boundary of any other node.Type: GrantFiled: January 25, 2013Date of Patent: March 29, 2016Assignee: INOVA Ltd.Inventors: Wah Hong Mah, Hua Ai, Lin Zhu, Timothy D. Hladik
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Publication number: 20160064275Abstract: Methods of selectively depositing a metal selectively onto a metal surface relative to a dielectric surface. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon.Type: ApplicationFiled: August 27, 2014Publication date: March 3, 2016Inventors: Feng Q. Liu, Paul F. Ma, Hua Ai, Jiang Lu, Mei Chang, David Thompson
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Patent number: 9213113Abstract: The present disclosure relates methods and apparatus for conducting a seismic survey using a fiber optic network. The method may include synchronizing a plurality of seismic devices over a fiber optic network where at least one of the seismic devices is separated from a master clock by at least one other seismic device. The method may also include encoding the master clock signal, transmitting the encoded master clock signal, and recovering the master clock signal. The apparatus may include a fiber optic network with seismic devices. The seismic devices may be arranged in a linear or tree topology.Type: GrantFiled: January 25, 2013Date of Patent: December 15, 2015Assignee: INOVA LTD.Inventors: Timothy D. Hladik, Hua Ai
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Patent number: 9017776Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: September 24, 2012Date of Patent: April 28, 2015Assignee: Applied Materials, Inc.Inventors: Hyman W. H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hou Gong Wang, Salvador P. Umotoy, Sang Ho Yu
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Publication number: 20150091681Abstract: A permanent magnetic coupling device includes an conductor rotor, an permanent magnet rotor and permanent magnets. The permanent magnet rotor includes a magnetic ring. The magnetic ring includes protrusions and recesses arranged alternately, in which first airflow channels are formed between the protrusions and the conductor rotor respectively, and second airflow channels are formed between the recesses and the conductor rotor respectively. A cross-sectional area of each of the second airflow channels is greater than a cross-sectional area of each of the first airflow channels. The permanent magnet rotor further includes cavities disposed at the recesses, and the permanent magnets are engaged into the cavities respectively.Type: ApplicationFiled: August 15, 2014Publication date: April 2, 2015Inventors: Hong-Liu ZHU, Tsu-Hua AI, Hong-Cheng SHEU
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Publication number: 20150069872Abstract: A cylindrical permanent magnetic coupling device includes a conductor rotor and a permanent magnet rotor. The conductor rotor includes a bottom and a sidewall surrounding the bottom for defining a cavity, in which the cavity includes at least two different inner diameters. The permanent magnet rotor is arranged in the cavity for providing at least two different air gaps between the conductor rotor and the permanent magnet rotor.Type: ApplicationFiled: August 1, 2014Publication date: March 12, 2015Inventors: Hong-Liu ZHU, Tsu-Hua AI, Hong-Cheng SHEU
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Patent number: 8817426Abstract: A magnetic read sensor having improved magnetic performance and robustness. The magnetic sensor includes a magnetic free layer and a magnetic pinned layer structure. The magnetic pinned layer structure includes first and second magnetic layers separated from one another by a non-magnetic coupling layer. The second magnetic layer of the magnetic pinned layer structure includes a layer of CoFeBTa, which prevents the diffusion of atoms and also promotes a desired BCC crystalline grain growth. The magnetic free layer structure can also include such a CoFeBTa layer for further prevention of atomic diffusion and further promotion of a desired BCC grain growth.Type: GrantFiled: October 17, 2011Date of Patent: August 26, 2014Assignee: HGST Netherlands B.V.Inventors: Zheng Gao, Yingfan Xu, Hua Ai Zeng
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Patent number: 8747556Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: September 14, 2012Date of Patent: June 10, 2014Assignee: Applied Materials, Inc.Inventors: Hyman W. H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, Sang Ho Yu
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Patent number: 8697031Abstract: The invention relates to micelles that are elaborated with functionality useful for imaging and/or selectively targeting tissue, e.g., in the delivery of hydrophobic agents.Type: GrantFiled: June 2, 2005Date of Patent: April 15, 2014Assignee: Case Western Reserve UniversityInventors: Hua Ai, Jeffrey L. Duerk, Chris Flask, Jinming Gao, Jonathan S. Lewin, Xintao Shuai, Brent Weinberg
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Publication number: 20140087091Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: ApplicationFiled: September 24, 2012Publication date: March 27, 2014Applicant: Applied Materials, Inc.Inventors: Hyman W.H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, San H. Yu
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Publication number: 20130094108Abstract: A magnetic read sensor having improved magnetic performance and robustness. The magnetic sensor includes a magnetic free layer and a magnetic pinned layer structure. The magnetic pinned layer structure includes first and second magnetic layers separated from one another by a non-magnetic coupling layer. The second magnetic layer of the magnetic pinned layer structure includes a layer of CoFeBTa, which prevents the diffusion of atoms and also promotes a desired BCC crystalline grain growth. The magnetic free layer structure can also include such a CoFeBTa layer for further prevention of atomic diffusion and further promotion of a desired BCC grain growth.Type: ApplicationFiled: October 17, 2011Publication date: April 18, 2013Applicant: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Zheng Gao, Yingfan Xu, Hua Ai Zeng
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Publication number: 20130008984Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: APPLIED MATERIALS, INC.Inventors: Hyman Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong (John) Yuan, Hou Gong Wang, Salvador P. Umotoy, Sang Ho Yu
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Publication number: 20130005533Abstract: A sporting apparatus comprises a structure body, an endless belt, an electricity generating unit and a position sensing unit. The endless belt is disposed on the structure body. The electricity generating unit is disposed in the structure body and transforms kinetic energy, which is transmitted from the endless belt, into electric power. The position sensing unit is disposed in the structure body and senses a position of a user on the endless belt so as to generate a sensing signal. An armature current of the electricity generating unit is adjusted according to the sensing signal for controlling a rotation speed of the endless belt. A control method of the sporting apparatus is also disclosed.Type: ApplicationFiled: June 29, 2012Publication date: January 3, 2013Applicant: DELTA ELECTRONICS, INC.Inventors: Tsu-Hua AI, Chih-Yang CHEN, Yen-Hung WU
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Patent number: 8296144Abstract: Embodiments of an automated dialog system testing method and component are described. This automated testing method and system supplements real human-based testing with simulated user input and incorporates a set of evaluation measures that focus on three basic aspects of task-oriented dialog systems, namely, understanding ability, efficiency, and the appropriateness of system actions. These measures are first applied on a corpus generated between a dialog system and a group of human users to demonstrate the validity of these measures with the human users' satisfaction levels. Results generally show that these measures are significantly correlated with these satisfaction levels. A regression model is then built to predict the user satisfaction scores using these evaluation measures.Type: GrantFiled: June 4, 2008Date of Patent: October 23, 2012Assignee: Robert Bosch GmbHInventors: Fuliang Weng, Hua Ai
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Patent number: 8291857Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: June 30, 2009Date of Patent: October 23, 2012Assignee: Applied Materials, Inc.Inventors: Hyman Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong (John) Yuan, Hou Gong Wang, Salvador P. Umotoy, Sang Ho Yu
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Patent number: 8293015Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: September 14, 2011Date of Patent: October 23, 2012Assignee: Applied Materials, Inc.Inventors: Hyman W. H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, Sang Ho Yu
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Patent number: 8216017Abstract: In a method of fabricating a planar light source, a first substrate is formed at first. First electrodes approximately parallel to each other are formed on the first substrate. Sets of first dielectric patterns are formed on the first substrate. Each set of the first dielectric patterns includes at least two first striped dielectric patterns, and each of the first striped dielectric patterns covers one of the first electrodes correspondingly. The edges of the top of each first striped dielectric pattern are raised in a peak shape. A phosphor layer is formed between the first striped dielectric patterns of each set of the first dielectric patterns. A second substrate is formed. The first and second substrates are bound; meanwhile, a discharge gas is injected into the discharge space.Type: GrantFiled: August 24, 2009Date of Patent: July 10, 2012Assignee: Chunghwa Picture Tubes, Ltd.Inventors: Yu-Heng Hsieh, Chu-Chi Ting, Shinn-Haw Huang, Chang-Jung Yang, Chia-Hua Ai
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Publication number: 20120000422Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: ApplicationFiled: September 14, 2011Publication date: January 5, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Hyman Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong (John) Yuan, Hou Gong Wang, Salvador P. Umotoy, Sang Ho Yu
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Patent number: 7676904Abstract: A method of manufacturing a GMR, TMR or CPP GMR sensor having a smooth interface between magnetic and non-magnetic layers to improve sensor performance by exposing a layer to a low energy ion beam prior to depositing a subsequent layer.Type: GrantFiled: July 30, 2004Date of Patent: March 16, 2010Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Phong V. Chau, James Mac Freitag, Mustafa Michael Pinarbasi, Hua Ai Zeng
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Publication number: 20100003406Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: ApplicationFiled: June 30, 2009Publication date: January 7, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Hyman Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong (John) Yuan, Hou Gong Wang, Salvador P. Umotoy, Sang Ho Yu