Abstract: A diode array includes a substrate and a plurality of light emitting diodes disposed on the substrate and arranged in an array. Each of the light emitting diodes includes a stack of functional layers includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer. At least one of the light emitting diodes includes a first current limiting region covering at least a portion of the first semiconductor layer, the light emitting layer or the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode and the second electrode are disposed at the same side of the first semiconductor layer.

Abstract: A diode array includes a substrate and a plurality of light emitting diodes disposed on the substrate and arranged in an array. Each of the light emitting diodes includes a stack of functional layers includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer. At least one of the light emitting diodes includes a first current limiting region covering at least a portion of the first semiconductor layer, the light emitting layer or the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode and the second electrode are disposed at the same side of the first semiconductor layer.

Abstract: A diode array includes a substrate and a plurality of light emitting diodes disposed on the substrate and arranged in an array. Each of the light emitting diodes includes a stack of functional layers includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer. At least one of the light emitting diodes includes a first current limiting region covering at least a portion of the first semiconductor layer, the light emitting layer or the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode and the second electrode are disposed at the same side of the first semiconductor layer.

Abstract: A diode array is provided. The diode array includes a substrate and a plurality of light emitting diodes disposed on the substrate and arranged in an array, wherein each of the light emitting diodes includes a stack of functional layers comprising a first type semiconductor layer, a second type semiconductor layer, and a light emitting layer located between the first type semiconductor layer and the second type semiconductor layer, wherein at least one of the light emitting diodes includes: a first current limiting region abutting a vertically extending boundary of the second semiconductor layer; wherein, with respect to a top down view, the first current limiting region is formed about an outer edge of the light emitting diode and an outer perimeter of the first current limiting region is equal to or less than 400 micrometers (?m).

Abstract: A light emitting-diode (LED) display device is provided. The display device comprises plural pixels arranged in array and each pixel includes at least one LED chip. The LED chip is disposed at a cavity of a black matrix (BM) layer and electrical connected to a transistor of a circuit substrate, wherein the transistor is below the BM layer.

Abstract: A diode array is provided. The diode array includes a substrate and a plurality of light emitting diodes disposed on the substrate and arranged in an array, wherein each of the light emitting diodes includes a stack of functional layers comprising a first type semiconductor layer, a second type semiconductor layer, and a light emitting layer located between the first type semiconductor layer and the second type semiconductor layer, wherein at least one of the light emitting diodes includes: a first current limiting region abutting a vertically extending boundary of the second semiconductor layer; wherein, with respect to a top down view, the first current limiting region is formed about an outer edge of the light emitting diode and an outer perimeter of the first current limiting region is equal to or less than 400 micrometers (?m).