Abstract: A display device is provided, including a circuit board, a display panel, a plurality of clock signal lines, and a plurality of grounding capacitors. The display panel is connected to the circuit board. Each clock signal line extends from the circuit board to the display panel. The plurality of grounding capacitors are disposed on the circuit board. Each grounding capacitor is connected to a corresponding clock signal line.

Abstract: A method includes: forming a mask layer on a semiconductor wafer; generating light by a tin droplet by a lithography exposure system; exposing the mask layer by the light; cleaning tin debris accumulated in the lithography exposure system by hydrogen gas; pumping the hydrogen gas from the lithography exposure system to a fuel cell; and generating electric power by the fuel cell.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: A display device is provided, including a circuit board, a display panel, a plurality of clock signal lines, and a plurality of grounding resistors. Each clock signal line extends from the circuit board to a non-display area of the display panel. The plurality of grounding resistors are disposed on the circuit board. Each grounding resistor is connected to a corresponding clock signal line, and is configured to reduce a voltage value of high level of the clock signal.

Abstract: An ultra-large horizontal seepage test system with intelligent graded loading and variable seepage path is provided, which includes a water storage system, a water pressure system, a horizontal seepage test system and an intelligent loading and control system. The water storage system, the water pressure system and the horizontal seepage test system are connected in sequence, and the water pressure system is used to apply a water pressure and a vertical pressure to a test piece to be tested in the horizontal seepage test system. An outlet valve of the horizontal seepage test system is connected to the water storage system, and the intelligent loading and control system is used to control operations of electrical components of the water pressure system and the horizontal seepage test system. With the test system, a water head pressure can be loaded intelligently, and an infiltration angle of water inflow can be adjusted.

Abstract: The present invention provides a display panel. By changing a wiring mode of data lines of a sub-pixel, a non-display area of a first sub-pixel is provided with a data line branched in the display area, and a display area of the first sub-pixel is further provided with a second data line, such that by setting opposite signals of the first data line and the second data line, the coupling voltages of the two data line signals to the sub-pixels can be offset by each other, and the problem of vertical crosstalk of an ultra-narrow border display is improved.

Abstract: A display device is provided, including a circuit board, a display panel, a plurality of clock signal lines, and a plurality of grounding resistors. Each clock signal line extends from the circuit board to a non-display area of the display panel. The plurality of grounding resistors are disposed on the circuit board. Each grounding resistor is connected to a corresponding clock signal line, and is configured to reduce a voltage value of high level of the clock signal.

Abstract: A display device is provided, including a circuit board, a display panel, a plurality of clock signal lines, and a plurality of grounding capacitors. The display panel is connected to the circuit board. Each clock signal line extends from the circuit board to the display panel. The plurality of grounding capacitors are disposed on the circuit board. Each grounding capacitor is connected to a corresponding clock signal line.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: The present invention provides a display panel. By changing a wiring mode of data lines of a sub-pixel, a non-display area of a first sub-pixel is provided with a data line branched in the display area, and a display area of the first sub-pixel is further provided with a second data line, such that by setting opposite signals of the first data line and the second data line, the coupling voltages of the two data line signals to the sub-pixels can be offset by each other, and the problem of vertical crosstalk of an ultra-narrow border display is improved.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: An ultra-large horizontal seepage test system with intelligent graded loading and variable seepage path is provided, which includes a water storage system, a water pressure system, a horizontal seepage test system and an intelligent loading and control system. The water storage system, the water pressure system and the horizontal seepage test system are connected in sequence, and the water pressure system is used to apply a water pressure and a vertical pressure to a test piece to be tested in the horizontal seepage test system. An outlet valve of the horizontal seepage test system is connected to the water storage system, and the intelligent loading and control system is used to control operations of electrical components of the water pressure system and the horizontal seepage test system. With the test system, a water head pressure can be loaded intelligently, and an infiltration angle of water inflow can be adjusted.

Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-? dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.

Abstract: Provided is an underwater repair system for a cavity region of a concrete panel rock-fill dam panel, including a moving platform, a work cabin, a pressure drainage apparatus, a traction apparatus, and a positioning apparatus; the traction apparatus controlling the movement of the moving platform on the surface of a dam concrete panel; the positioning apparatus transmits a detection position; the work cabin is a pressure cabin, the work cabin being connected to the pressure drainage apparatus, and a drill apparatus and grouting apparatus being arranged in the work cabin; the moving platform moves into the cavity region, and the pressure drainage apparatus starts up to drain the water in the work cabin, a partially closed waterless space being formed inside the work cabin, the drill apparatus drilling the concrete panel at the upper end of the cavity region and the grouting apparatus subsequently implementing grouting to complete the repair.

Abstract: In one implementation, a first access behavior is determined. The first access behavior is for accessing a first dataset associated with a first tenant of a storage system, and the first dataset is stored in a first data node in the storage system. A second access behavior is determined. The second access behavior is for accessing a data entry that is to be added into a second dataset associated with a second tenant of the storage system, and the second dataset is stored in at least one data node in the storage system. In response to a deviation between the first access behavior and second access behavior being above a predefined threshold, the data entry is stored into the first data node.

Abstract: The disclosure describes that both Cas9 and Cpf1 enzymes can exhibit potent nickase activities on an extensive class of mismatched dsDNA targets. These properties allow the production of efficient nickases for a chosen dsDNA target sequence, without modification of the nuclease protein, using guide RNAs with a variety of patterns of mismatch to the intended DNA target. In parallel to the nicking activities observed with purified Cas9 in vitro, sequence-dependent nicking for both perfectly matched and partially mismatched target sequences in a Saccharomyces cerevisae in vivo system was observed.

Abstract: Provided is an underwater repair system for a cavity region of a concrete panel rock-fill dam panel, including a moving platform, a work cabin, a pressure drainage apparatus, a traction apparatus, and a positioning apparatus; the traction apparatus controlling the movement of the moving platform on the surface of a dam concrete panel; the positioning apparatus transmits a detection position, the work cabin is a pressure cabin, the work cabin being connected to the pressure drainage apparatus, and a drill apparatus and grouting apparatus being arranged in the work cabin; the moving platform moves into the cavity region, and the pressure drainage apparatus starts up to drain the water in the work cabin, a partially closed waterless space being formed inside the work cabin, the drill apparatus drilling the concrete panel at the upper end of the cavity region and the grouting apparatus subsequently implementing grouting to complete the repair.