Patents by Inventor Hua Gan

Hua Gan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE ASSEMBLY SUBSTRATES WITH TUNNELED INTERCONNECTS, AND METHODS FOR MAKING THE SAME
    Publication number: 20240071963
    Abstract: A semiconductor device assembly is provided. The assembly includes a package substrate which has a tunneled interconnect structure. The tunneled interconnect structure has a solder-wettable surface, an interior cavity, and at least one microvia extending from the surface to the cavity. The assembly further includes a semiconductor device disposed over the substrate and a solder joint coupling the device and the substrate. The joint comprises the solder between the semiconductor device and the interconnect structure, which includes the solder on the surface, the solder in the microvia, and the solder within the interior cavity.
    Type: Application
    Filed: August 23, 2022
    Publication date: February 29, 2024
    Inventors: Yun Ting Hsu, Chong Leong Gan, Min Hua Chung, Yung Sheng Zou
  • Intermetallic diffusion block device and method of manufacture
    Patent number: 7683493
    Abstract: One embodiment of the present invention is directed to an under bump metallurgy material. The under bump metallurgy material of this embodiment includes an adhesion layer and a conduction layer formed on top of the adhesion layer. The under bump metallurgy material of this embodiment also includes a barrier layer plated on top of the conduction layer and a sacrificial layer plated on top of the barrier layer. The conduction layer of this embodiment includes a trench formed therein, the trench contacting a portion of the barrier layer and blocking a path of intermetallic formation between the conduction layer and the sacrificial layer.
    Type: Grant
    Filed: April 29, 2008
    Date of Patent: March 23, 2010
    Assignee: International Business Machines Corporation
    Inventors: Charles L. Arvin, Carla A. Bailey, Harry D. Cox, Hua Gan, Hsichang Liu, Arthur G. Merryman, Vall F. McClean, Srinivasa S. N. Reddy, Brian R. Sundlof
  • INTERMETALLIC DIFFUSION BLOCK DEVICE AND METHOD OF MANUFACTURE
    Publication number: 20090267228
    Abstract: One embodiment of the present invention is directed to an under bump metallurgy material. The under bump metallurgy material of this embodiment includes an adhesion layer and a conduction layer formed on top of the adhesion layer. The under bump metallurgy material of this embodiment also includes a barrier layer plated on top of the conduction layer and a sacrificial layer plated on top of the barrier layer. The conduction layer of this embodiment includes a trench formed therein, the trench contacting a portion of the barrier layer and blocking a path of intermetallic formation between the conduction layer and the sacrificial layer.
    Type: Application
    Filed: April 29, 2008
    Publication date: October 29, 2009
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Charles L. Arvin, Carla A. Bailey, Harry D. Cox, Hua Gan, Hsichang Liu, Arthur G. Merryman, Vall F. McClean, Srinivasa S. N. Reddy, Brian R. Sundlof