Patents by Inventor HUA-HSIN YU
HUA-HSIN YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240071428Abstract: A device is disclosed and includes an input stage circuit, a switching circuit, and a first latch circuit. The input stage circuit generates a first input signal having a first voltage and a second input signal based on a third input signal. The switching circuit operates in response to a first control signal, and adjusts a voltage level of a first data line according to the first input signal and a voltage level of a second data line according to the second input signal. The first latch circuit is coupled to the switching circuit by the first data line and the second data line. The first latch circuit latches a data in response to the first control signal and a second control signal, and adjusts the voltage level of the first data line based on a second voltage different from the first voltage.Type: ApplicationFiled: November 8, 2023Publication date: February 29, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hua-Hsin YU, Hung-Jen LIAO, Cheng-Hung LEE, Hau-Tai SHIEH
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Patent number: 11915743Abstract: A latch formed from a memory cell includes a clock input terminal configured to receive a clock signal, complementary first and second data terminals, and a latch circuit. The latch circuit has first and second inverters. The first inverter has an input terminal coupled to the first data terminal, and the second inverter has an input terminal coupled to the second data terminal. A first pass gate transistor is coupled between an output terminal of the second inverter and the first data terminal. A second pass gate transistor is coupled between an output terminal of the first inverter and the second data terminal. The first and second pass gate transistors each have a gate terminal coupled to the clock input terminal. The input terminal of the first inverter is not directly connected to the output terminal of the second inverter, and the input terminal of the second inverter is not directly connected to the output terminal of the first inverter.Type: GrantFiled: March 15, 2021Date of Patent: February 27, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hua-Hsin Yu, Cheng Hung Lee, Hung-Jen Liao, Hau-Tai Shieh
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Patent number: 11869623Abstract: A device is disclosed and includes an input stage circuit, a switching circuit, and a first latch circuit. The input stage circuit generates a first input signal having a first voltage and a second input signal based on a third input signal. The switching circuit operates in response to a first control signal, and adjusts a voltage level of a first data line according to the first input signal and a voltage level of a second data line according to the second input signal. The first latch circuit is coupled to the switching circuit by the first data line and the second data line. The first latch circuit latches a data in response to the first control signal and a second control signal, and adjusts the voltage level of the first data line based on a second voltage different from the first voltage.Type: GrantFiled: August 30, 2021Date of Patent: January 9, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hua-Hsin Yu, Hung-Jen Liao, Cheng-Hung Lee, Hau-Tai Shieh
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Publication number: 20230410854Abstract: A memory circuit includes a first and a second bit line coupled to a set of memory cells, a local input output circuit including a first and a second data line, a first control circuit configured to generate a first sense amplifier signal and a second sense amplifier signal, a second control circuit configured to generate a first control signal in response to at least a second control signal or a third control signal, a switching circuit configured to transfer a first and second input signal to the corresponding first and second data line during a write operation, and to electrically isolate the first and second data line from the first and second input signal during a read operation, and a first latch configured as a sense amplifier, during the read operation, and configured as a write-in latch, during the write operation.Type: ApplicationFiled: January 20, 2023Publication date: December 21, 2023Inventors: Hua-Hsin YU, Hau-Tai SHIEH, Cheng Hung LEE, Hung-Jen LIAO
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Publication number: 20230064056Abstract: A device is disclosed and includes an input stage circuit, a switching circuit, and a first latch circuit. The input stage circuit generates a first input signal having a first voltage and a second input signal based on a third input signal. The switching circuit operates in response to a first control signal, and adjusts a voltage level of a first data line according to the first input signal and a voltage level of a second data line according to the second input signal. The first latch circuit is coupled to the switching circuit by the first data line and the second data line. The first latch circuit latches a data in response to the first control signal and a second control signal, and adjusts the voltage level of the first data line based on a second voltage different from the first voltage.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hua-Hsin YU, Hung-Jen LIAO, Cheng-Hung LEE, Hau-Tai SHIEH
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Publication number: 20220068355Abstract: The disclosure is directed to a memory circuit, an electronic device, and a method of operating the memory circuit. According to an exemplary embodiment, the disclosure is directed to a memory circuit which includes not limited to a voltage equalizing circuit configured to equalize and pre-charge a first data line and a second data line to a reference voltage, a sense amplifier circuit configured to sense a binary data based on a relative voltage between the first data line and the second data line, a read-out latch circuit configured to receive the binary data which is to be transmitted to an external controller, and a write circuit configured to receive a first signal of the first data line and a second signal of the second data line so as to write the first signal to a first bit line and the second signal to a second bit line.Type: ApplicationFiled: August 30, 2020Publication date: March 3, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hua-Hsin Yu, Cheng-Hung Lee, Hung-Jen Liao, Hau-Tai Shieh
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Patent number: 11264081Abstract: The disclosure is directed to a memory circuit, an electronic device, and a method of operating the memory circuit. According to an exemplary embodiment, the disclosure is directed to a memory circuit which includes not limited to a voltage equalizing circuit configured to equalize and pre-charge a first data line and a second data line to a reference voltage, a sense amplifier circuit configured to sense a binary data based on a relative voltage between the first data line and the second data line, a read-out latch circuit configured to receive the binary data which is to be transmitted to an external controller, and a write circuit configured to receive a first signal of the first data line and a second signal of the second data line so as to write the first signal to a first bit line and the second signal to a second bit line.Type: GrantFiled: August 30, 2020Date of Patent: March 1, 2022Assignee: Taiwan Semiconductor Manfacturing Company, Ltd.Inventors: Hua-Hsin Yu, Cheng-Hung Lee, Hung-Jen Liao, Hau-Tai Shieh
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Patent number: 11217301Abstract: Embodiments herein include a first line, wherein the first line is complementary to a second line; a voltage generator configured to generate a first supply voltage, a second supply voltage and a third supply voltage, the third supply voltage is lower than the second supply voltage, the voltage generator further comprises a transistor structure with a plurality of transistors electrically connected in parallel from the first supply voltage to a supply output node that provides the second supply voltage; a memory cell electrically coupled to the first and second lines, the memory cell further comprises two cross-coupled transistor strings connected from the first supply voltage to a ground voltage; a pre-charger with a first pre-charger transistor cross-coupled to a second pre-charger transistor, the pre-charger is configured to pre-charge the first and second lines to a level of a source voltage.Type: GrantFiled: April 6, 2020Date of Patent: January 4, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Hua-Hsin Yu, Hau-Tai Shieh
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Patent number: 11087833Abstract: A power management circuit suitable for a memory device and a memory device is provided. The power management circuit includes a first logic circuit, a second logic circuit, and a transmission gate. The first logic circuit is configured to receive an inverted first input signal and a second input signal and generates a first output signal. The second logic circuit is configured to receive a first input signal and the second input signal and generates a second output signal. The transmission gate is configured to receive the first output signal and generates a control signal to at least one power transistor coupled between the power management circuit and the memory device. During a standby mode, the power transistor is turned on to make a first voltage equal to a predetermined voltage and during a sleep mode, the control signal is coupled to a first voltage. The predetermined voltage is greater than the first voltage.Type: GrantFiled: June 22, 2020Date of Patent: August 10, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Chen Kuo, Cheng-Hung Lee, Chi-Ting Cheng, Hua-Hsin Yu, Wei-Jer Hsieh, Yu-Hao Hsu, Yang-Syu Lin, Che-Ju Yeh
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Publication number: 20210201988Abstract: A latch formed from a memory cell includes a clock input terminal configured to receive a clock signal, complementary first and second data terminals, and a latch circuit. The latch circuit has first and second inverters. The first inverter has an input terminal coupled to the first data terminal, and the second inverter has an input terminal coupled to the second data terminal. A first pass gate transistor is coupled between an output terminal of the second inverter and the first data terminal. A second pass gate transistor is coupled between an output terminal of the first inverter and the second data terminal. The first and second pass gate transistors each have a gate terminal coupled to the clock input terminal. The input terminal of the first inverter is not directly connected to the output terminal of the second inverter, and the input terminal of the second inverter is not directly connected to the output terminal of the first inverter.Type: ApplicationFiled: March 15, 2021Publication date: July 1, 2021Inventors: Hua-Hsin Yu, Cheng Hung Lee, Hung-Jen Liao, Hau-Tai Shieh
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Publication number: 20210125662Abstract: A power management circuit suitable for a memory device and a memory device is provided. The power management circuit includes a first logic circuit, a second logic circuit, and a transmission gate. The first logic circuit is configured to receive an inverted first input signal and a second input signal and generates a first output signal. The second logic circuit is configured to receive a first input signal and the second input signal and generates a second output signal. The transmission gate is configured to receive the first output signal and generates a control signal to at least one power transistor coupled between the power management circuit and the memory device. During a standby mode, the power transistor is turned on to make a first voltage equal to a predetermined voltage and during a sleep mode, the control signal is coupled to a first voltage. The predetermined voltage is greater than the first voltage.Type: ApplicationFiled: June 22, 2020Publication date: April 29, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Chen Kuo, Cheng-Hung Lee, Chi-Ting Cheng, Hua-Hsin Yu, Wei-Jer Hsieh, Yu-Hao Hsu, Yang-Syu Lin, Che-Ju Yeh
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Patent number: 10950296Abstract: A latch formed from a memory cell includes a clock input terminal configured to receive a clock signal, complementary first and second data terminals, and a latch circuit. The latch circuit has first and second inverters. The first inverter has an input terminal coupled to the first data terminal, and the second inverter has an input terminal coupled to the second data terminal. A first pass gate transistor is coupled between an output terminal of the second inverter and the first data terminal. A second pass gate transistor is coupled between an output terminal of the first inverter and the second data terminal. The first and second pass gate transistors each have a gate terminal coupled to the clock input terminal. The input terminal of the first inverter is not directly connected to the output terminal of the second inverter, and the input terminal of the second inverter is not directly connected to the output terminal of the first inverter.Type: GrantFiled: July 10, 2019Date of Patent: March 16, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hua-Hsin Yu, Cheng Hung Lee, Hung-Jen Liao, Hau-Tai Shieh
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Publication number: 20200234757Abstract: A memory device is disclosed. The device includes a first line, wherein the first line is complementary to a second line; a voltage generator configured to generate a first supply voltage, a second supply voltage and a third supply voltage, the third supply voltage is lower than the second supply voltage, the voltage generator further comprises a transistor structure with a plurality of transistors electrically connected in parallel from the first supply voltage to a supply output node that provides the second supply voltage; a memory cell electrically coupled to the first and second lines, the memory cell further comprises two cross-coupled transistor strings connected from the first supply voltage to a ground voltage; a pre-charger with a first pre-charger transistor cross-coupled to a second pre-charger transistor, the pre-charger is configured to pre-charge the first and second lines to a level of a source voltage.Type: ApplicationFiled: April 6, 2020Publication date: July 23, 2020Inventors: Hua-Hsin Yu, Hau-Tai Shieh
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Patent number: 10614878Abstract: A module includes a high speed voltage node, a pre-charging circuit, and a cross coupled circuit. The pre-charging circuit includes a pre-charger configured to pre-charge complementary first and second lines of a memory device to a level of a source voltage. The cross coupled circuit is configured to pull one of the first and second lines to a level of a high speed voltage at the high speed voltage node higher than the level of the source voltage. As such, a memory cell of the memory device can be read at a high speed.Type: GrantFiled: September 23, 2016Date of Patent: April 7, 2020Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Hua-Hsin Yu, Hau-Tai Shieh
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Publication number: 20200020386Abstract: A latch formed from a memory cell includes a clock input terminal configured to receive a clock signal, complementary first and second data terminals, and a latch circuit. The latch circuit has first and second inverters. The first inverter has an input terminal coupled to the first data terminal, and the second inverter has an input terminal coupled to the second data terminal. A first pass gate transistor is coupled between an output terminal of the second inverter and the first data terminal. A second pass gate transistor is coupled between an output terminal of the first inverter and the second data terminal. The first and second pass gate transistors each have a gate terminal coupled to the clock input terminal. The input terminal of the first inverter is not directly connected to the output terminal of the second inverter, and the input terminal of the second inverter is not directly connected to the output terminal of the first inverter.Type: ApplicationFiled: July 10, 2019Publication date: January 16, 2020Inventors: Hua-Hsin Yu, Cheng Hung Lee, Hung-Jen Liao, Hau-Tai Shieh
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Publication number: 20180090189Abstract: A module includes a high speed voltage node, a pre-charging circuit, and a cross coupled circuit. The pre-charging circuit includes a pre-charger configured to pre-charge complementary first and second lines of a memory device to a level of a source voltage. The cross coupled circuit is configured to pull one of the first and second lines to a level of a high speed voltage at the high speed voltage node higher than the level of the source voltage. As such, a memory cell of the memory device can be read at a high speed.Type: ApplicationFiled: September 23, 2016Publication date: March 29, 2018Inventors: Hua-Hsin Yu, Hau-Tai Shieh
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Patent number: 9330731Abstract: A circuit comprises a first transistor and a second transistor in a strap cell region between a first memory array and a second memory array of a memory device. The first transistor includes a first node connected to a first data line, and a second node connected to a second data line. The first node and the second node of the first transistor are complementary to each other in voltage level. Further, the second transistor includes a first node connected to the second data line, and a second node connected to the first data line. The first node and the second node of the second transistor are complementary to each other in voltage level.Type: GrantFiled: February 17, 2014Date of Patent: May 3, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hua-Hsin Yu, Hsiu Fen Peng, Hau-Tai Shieh
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Publication number: 20150235675Abstract: A circuit comprises a first transistor and a second transistor in a strap cell region between a first memory array and a second memory array of a memory device. The first transistor includes a first node connected to a first data line, and a second node connected to a second data line. The first node and the second node of the first transistor are complementary to each other in voltage level. Further, the second transistor includes a first node connected to the second data line, and a second node connected to the first data line. The first node and the second node of the second transistor are complementary to each other in voltage level.Type: ApplicationFiled: February 17, 2014Publication date: August 20, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: HUA-HSIN YU, HSIU FEN PENG, HAU-TAI SHIEH