Abstract: A photosensitive device includes a first photosensitive unit, a first collimator layer, a first lens, and a first dummy lens. The first photosensitive unit includes a first photosensitive component and a first control circuit. The first control circuit is electrically connected to the first photosensitive component. The first collimator layer is located above the first photosensitive component and has a first pinhole and a first dummy pinhole. The first lens is located above the first collimator layer and overlapping with the first photosensitive component and the first pinhole in a first direction. The first dummy lens is located above the first collimator layer and overlapping with the first dummy pinhole in the first direction.

Abstract: A signature generator has been designed that can create a malicious campaign signature with substantial coverage of malicious campaign behavior without impeding benign traffic. The malicious campaign signature generator uses data of multiple, known malicious campaigns to identify abused, benign network entities. The signature generator builds a graph data structure for each malicious campaign that represents the abused network entities. The relationships encoded in the graph data structure indicate the use of the combination of abused network entities in the campaign. The signature generator aggregates the graph data structures and identifies a combination of the benign network entities that were highly abused across the multiple malicious campaigns with respect to all of the abused network entities represented in the graph data structures. A signature is then created from the identifiers of this combination of highly abused network entities.

Abstract: A plurality of photovoltaic junctions for a subpixel may be formed in a semiconductor substrate. After thinning the backside of the semiconductor substrate, at least one transparent refraction structure may be formed on the backside surface of the thinned semiconductor substrate. Each transparent refraction structure has a variable thickness that decreases with a lateral distance from a vertical axis passing through a geometrical center of the second-conductivity-type pillar structures for the subpixel. A subpixel optics assembly including an optical lens may be formed over the at least one transparent refraction structure. Each transparent refraction structure may reduce the tilt angle of light that propagate downward into the photodetectors, and increases total internal reflection of light and increase the efficiency of the photodetectors.

Abstract: The present invention provides a ventilator control method a signal sensing module acquires a physiological signal feature of a user, a calibration and learning module learns the physiological signal feature of the user and outputs a drive signal after learning, and a main control module controls the operation efficiency of an air supply apparatus and opening and closing of a servo valve of a first servo valve box according to the drive signal, thus forming different operation modes. A ventilator performing the control method is provided. The present invention resolves the problem that the conventional ventilator is not compatible with the sleep apnea type of the user, and the problem that a single operation mode damages a patient's respiratory function. In the present invention, one ventilator is used to safely resolve various types of sleep apnea problems, greatly reducing costs of various types of ventilators purchased for the users.

Abstract: A semiconductor device, a back-side deep trench isolation (BDTI) structure of a semiconductor device, and method of manufacturing a semiconductor structure are provided. The semiconductor device, comprising: a pixel region disposed within a substrate and comprising an image sensing element configured to convert electromagnetic radiation into an electrical signal; and one or more BDTI structures extending from a first-side of the substrate to positions within the substrate; wherein the one or more of BDTI structures comprise one or more ferroelectric materials.

Abstract: A converter includes a substrate, a first transistor, a second transistor, a first gate contact plug, a first source contact plug, a first metal line, and an inductor. The first transistor includes a first gate structure, a first source region, and a first drain region. The second transistor includes a second gate structure, a second source region, and a second drain region. The first gate contact plug is electrically connected to the first gate structure. The first source contact plug is electrically connected to the first source region. The first metal line is in contact with a top surface of the first gate contact plug and a top surface of the first source contact plug. The inductor is electrically connected to the first drain region of the first transistor and the second source region of the second transistor.

Abstract: A display device includes an array substrate, a first organic layer, a second organic layer, a third organic layer, and a plurality of micro lenses. The array substrate has a plurality of light-emitting elements disposed thereon. The first organic layer is on the array substrate and covers the light-emitting elements. The second organic layer is on the first organic layer. The third organic layer is on the second organic layer. The third organic layer has a portion extending downward through the second organic layer. The micro lenses are over the third organic layer and disposed corresponding to the light-emitting elements, respectively.

Abstract: An integrated circuit includes a doping region extending in a first direction, the doping region being doped with a first-type dopant; a gate structure at least partially overlapping the doping region; a drain contact region in the doping region and spaced apart from the gate structure in the first direction, the drain contact region being doped with the first-type dopant at a higher concentration than the doping region; a dielectric layer on the doping region between the gate structure and the drain contact region; a first contact electrically connected to the dielectric layer; and a second contact electrically connected to the drain contact region and electrically connected to the first contact.

Abstract: A context-based cyberattack signature generation system (“signature generation system”) disclosed herein comprises a signature prompt schema for generating prompts to a language model that generates cyberattack signatures. The signature prompt schema comprises a description of syntax for the cyberattack signatures and descriptions of case knowledge and domain knowledge for a type of cyberattack corresponding to a cyberattack signature. The signature generation system tests cyberattack signatures generated with the signature prompt schema against minimum signature conditions and traffic with ground-truth malicious/benign labels. Once the signature prompt schema passes the tests, the signature generation system deploys the tested signature prompt schema in combination with the language model for cyberattack signature generation.

Abstract: The present invention provides a ventilator control method a signal sensing module acquires a physiological signal feature of a user, a calibration and learning module learns the physiological signal feature of the user and outputs a drive signal after learning, and a main control module controls the operation efficiency of an air supply apparatus and opening and closing of a servo valve of a first servo valve box according to the drive signal, thus forming different operation modes. A ventilator performing the control method is provided. The present invention resolves the problem that the conventional ventilator is not compatible with the sleep apnea type of the user, and the problem that a single operation mode damages a patient's respiratory function. In the present invention, one ventilator is used to safely resolve various types of sleep apnea problems, greatly reducing costs of various types of ventilators purchased for the users.

Abstract: A modified polyethylene terephthalate copolyester, including three fragments shown as [Fragment 1], [Fragment 2], and [Fragment 3] in the specification, is provided.

Abstract: A method for evaluating a large model, an electronic device and a computer readable storage medium are provided, which relate to a field of artificial intelligence technology, and in particular to fields of large models technology and deep learning technology. The method includes: evaluating a response information of each of M large language models for an input instruction based on a preset evaluation rule, so as to obtain a first evaluation information for each response information, where M is a positive integer greater than 1; evaluating, in response to the first evaluation information for the M large language models being consistent with each other, each response information in a plurality of evaluation dimensions, so as to obtain a second evaluation information for each response information; and determining an evaluation result representing a responsiveness of each large language model, according to the second evaluation information for each response information.

Abstract: A preparation method of a modified bismaleimide resin includes the following steps. Maleic anhydride is mixed with a bisamine compound to obtain a corresponding mixture. The mixture is heated. The bisamine compound has a main chain structure or fragment represented by Formula A, Formula B, or Formula C as described in the description.

Abstract: A non-volatile memory device comprises at least one non-volatile memory cell, electrically connected to at least one bit line, a first select line, a second select line, a control line and a common line. Each non-volatile memory cell comprises a first select transistor, having a drain electrically connected to a bit line, and a gate electrically connected to the first select line; a second select transistor, having a source electrically connected to the common line, and a gate electrically connected to the second select line; and a transistor with a floating gate, having a drain electrically connected to a source of the first select transistor, a gate electrically connected to the control line, and a source electrically connected to a drain of the second select transistor; wherein when performing erase or write operation, the second select line is grounded, causing the second select transistor to turn off.

Abstract: A field effect transistor including a substrate; a monolayer of a single crystal semiconducting transition metal dichalcogenide (TMD) on the substrate; a source contact and a drain contact to the strained monolayer; and a gate contact on the substrate; wherein the a gate voltage applied to the gate contact with respect to the source contact modulates a ferroelectric response of the monolayer when strained and a current through the monolayer between the source contact and the drain contact; and wherein the substrate is rigid and the monolayer experiences asymmetric lattice expansion when strained against the rigid substrate in response to an external magnetic field or the substrate is a strain engineered substrate inducing asymmetric lattice expansion of the monolayer.

Abstract: A flap cover adapted for a bag is provided and includes a first layer structure, a second layer structure and a third layer structure. The second layer structure is attached on the first layer structure. The third layer structure is attached on the second layer structure. An accommodating space is defined by the third layer structure and the second layer structure, and an opening is communicated with the accommodating space for providing access to the accommodating space. Furthermore, a bag assembly having the aforementioned flap cover is also provided.

Abstract: An integrated circuit comprising an n-type drift region, a gate structure directly on a first portion of the n-type drift region, a drain structure formed in a second portion of the n-type drift region, the gate structure and the drain structure being separated by a drift region length, a resist protective oxide (RPO) formed over a portion of the n-type drift region between the gate structure and the drain structure, a field plate contact providing a direct electrical connection to the resist protective oxide.

Abstract: The disclosure relates to a polyol composition, a corresponding polyurethane reaction system and a polyurethane foam prepared therefrom. The polyol composition includes: B1) an EO- and/or PO-based polyether polyol having a functionality of 2-6 and a weight-average molecular weight of 3000-12000 g/mol; B2) a PO- and/or EO-terminated polyarea polyol having a functionality of 2-4, and a weight-average molecular weight of 3000-8000 g/mol; optionally B3) a polyester polyol having a functionality of 2-4, and a weight-average molecular weight of 1000-1800 g/mol; and B4) at least one ?-dicarbonyl compound.

Abstract: A set of virtual machines (VMs) with different guest operating systems installed is initially booted and prepared to facilitate rapid creation, or “forking,” of a child VM(s) for malware analysis of a software sample. Because malicious code may be packaged for a specific operating system version, subsets of the VMs may have different versions of the same guest operating system installed. Upon detection of a sample indicated for malware analysis, a child VM(s) running the appropriate guest operating system is created based on a corresponding one(s) of the set of VMs. A process in which the corresponding VM(s) has been booted is forked to create a child process. A child VM which is a copy of the VM booted in the parent process is then created in the child process. The sample is then sandboxed in the child VM for analysis to determine if the sample comprises malware.

Abstract: A display panel including a circuit substrate, a plurality of light-emitting elements, a plurality of microlenses, and a plurality of dummy microlenses is provided. The circuit substrate is provided with a plurality of pixel areas. Each of the pixel areas is provided with the light-emitting elements. The plurality of microlenses are disposed on the circuit substrate and respectively overlapped with the light-emitting elements. The plurality of dummy microlenses are disposed between the microlenses and not overlapped with the light-emitting elements.