Patents by Inventor Hua-Mao Chen
Hua-Mao Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240154008Abstract: Provided is a semiconductor device including a substrate, a channel layer, a gate structure, a first doped region, a second doped region, a third doped region and a channel cap layer. The channel layer is located on the substrate. The channel layer has a trench. The gate structure is disposed in the trench. The first doped region and the second doped region are located in the channel layer on two sides of the gate structure. The third doped region is located in the substrate below the channel layer. The channel cap layer is located between the gate structure and the first doped region, between the gate structure and the second doped region, and between the gate structure and the channel layer. An energy band gap of the channel cap layer is larger than an energy band gap of the channel layer.Type: ApplicationFiled: January 9, 2023Publication date: May 9, 2024Applicant: Industrial Technology Research InstituteInventors: Chih-Hung Yen, Yu-Ting Chen, Hua-Mao Chen
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Publication number: 20240021644Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation.Type: ApplicationFiled: August 8, 2023Publication date: January 18, 2024Inventors: Cheng Yu Huang, Chun-Hao Chuang, Keng-Yu Chou, Wei-Chieh Chiang, Chin-Chia Kuo, Wen-Hau Wu, Hua-Mao Chen, Chih-Kung Chang
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Patent number: 11862654Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation.Type: GrantFiled: January 15, 2021Date of Patent: January 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng Yu Huang, Chun-Hao Chuang, Keng-Yu Chou, Wei-Chieh Chiang, Chin-Chia Kuo, Wen-Hau Wu, Hua-Mao Chen, Chih-Kung Chang
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Publication number: 20220278161Abstract: The present disclosure describes a semiconductor device that includes a first die bonded to a second die with interconnect structures in the first die. The first die includes a photodiode having first and second electrodes on a first side of a first dielectric layer, and first, second, and third interconnect structures in the first dielectric layer. The first and second interconnect structures are connected to the first and second electrodes, respectively. The second electrode has a polarity opposite to the first electrode. The second and third interconnect structures extend to a second side opposite to the first side of the first dielectric layer. The second die includes a second dielectric layer and a fourth interconnect structure in the second dielectric layer. The second dielectric layer is bonded to the second side of the first dielectric layer. The fourth interconnect structure connects the second and third interconnect structures.Type: ApplicationFiled: December 30, 2021Publication date: September 1, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kuo-Chin HUANG, Tzu-Jui WANG, Hua-Mao CHEN, Chin-Chia KUO, Yuichiro YAMASHITA
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Publication number: 20220231066Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation.Type: ApplicationFiled: January 15, 2021Publication date: July 21, 2022Inventors: Cheng Yu Huang, Chun-Hao Chuang, Keng-Yu Chou, Wei-Chieh Chiang, Chin-Chia Kuo, Wen-Hau Wu, Hua-Mao Chen, Chih-Kung Chang
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Patent number: 10274471Abstract: A gas detection module is provided with a convenient detection mechanism of the alcohol gas. The gas detection module may include a gas sensor and a detection circuit. The gas sensor includes a substrate, a gate, an insulating layer, an active layer, a source and a drain. The gate is disposed on the substrate. The insulating layer is disposed on the gate and the substrate. The active layer is disposed on the insulating layer. Each of the source and the drain is partially arranged on the active layer and extends to the insulating layer. The active layer is exposed from between the source and the drain. The detection circuit is electrically connected to the source of the gas sensor. Based on this, the deficiency of the conventional gas detection module can be overcome.Type: GrantFiled: March 28, 2017Date of Patent: April 30, 2019Assignee: NATIONAL SUN YAT-SEN UNIVERSITYInventors: Ting-Chang Chang, Hua-Mao Chen, Hsiao-Cheng Chiang, Yu-Ching Tsao, Min-Chen Chen
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Publication number: 20180136154Abstract: A gas detection module is provided with a convenient detection mechanism of the alcohol gas. The gas detection module may include a gas sensor and a detection circuit. The gas sensor includes a substrate, a gate, an insulating layer, an active layer, a source and a drain. The gate is disposed on the substrate. The insulating layer is disposed on the gate and the substrate. The active layer is disposed on the insulating layer. Each of the source and the drain is partially arranged on the active layer and extends to the insulating layer. The active layer is exposed from between the source and the drain. The detection circuit is electrically connected to the source of the gas sensor. Based on this, the deficiency of the conventional gas detection module can be overcome.Type: ApplicationFiled: March 28, 2017Publication date: May 17, 2018Inventors: Ting-Chang Chang, Hua-Mao Chen, Hsiao-Cheng Chiang, Yu-Ching Tsao, Min-Chen Chen
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Patent number: 9647020Abstract: A light sensing circuit for solving the problem of low reliability in illumination detection includes a photo transistor having a gate, a drain and a source; a first transistor electrically connecting between the gate and source of the photo transistor; a first capacitor electrically connecting between the gate and the drain of the photo transistor; a second transistor electrically connecting with the drain of the photo transistor, the first capacitor, and a data signal; a second capacitor electrically connecting between the source of the photo transistor and a ground contact; a third transistor electrically connecting with the photo transistor, the first transistor, and the second capacitor; and a switch adapted to alternatively connect the third transistor with a buffer or a zero signal. A control method of the above light sensing circuit is also disclosed. Therefore, the above identified problem can be surely solved.Type: GrantFiled: July 15, 2015Date of Patent: May 9, 2017Assignee: NATIONAL SUN YAT-SEN UNIVERSITYInventors: Ting-Chang Chang, Hua-Mao Chen, Ming-Yen Tsai, Min-Chen Chen
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Publication number: 20170018654Abstract: A thin-film transistor and a manufacturing method thereof are characterized in that: the active layer is a group IV-VI compound semiconductor film; the group IV-VI compound is one of geranium sulfide (GeS), germanium selenide (GeSe), germanium telluride (GeTe), tin selenide (SnSe), and tin telluride (SnTe) or a ternary, quaternary, or quinary compound thereof; the active layer is deposited by sputtering; and thermal annealing is performed after the active layer is deposited. The thin-film transistor has high carrier mobility and a high current on/off ratio and therefore meets the needs of high-resolution display development.Type: ApplicationFiled: July 14, 2015Publication date: January 19, 2017Inventors: TING-CHANG CHANG, HUA-MAO CHEN, MING-YEN TSAI, MIN-CHEN CHEN
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Publication number: 20160358956Abstract: A light sensing circuit for solving the problem of low reliability in illumination detection includes a photo transistor having a gate, a drain and a source; a first transistor electrically connecting between the gate and source of the photo transistor; a first capacitor electrically connecting between the gate and the drain of the photo transistor; a second transistor electrically connecting with the drain of the photo transistor, the first capacitor, and a data signal; a second capacitor electrically connecting between the source of the photo transistor and a ground contact; a third transistor electrically connecting with the photo transistor, the first transistor, and the second capacitor; and a switch adapted to alternatively connect the third transistor with a buffer or a zero signal. A control method of the above light sensing circuit is also disclosed. Therefore, the above identified problem can be surely solved.Type: ApplicationFiled: July 15, 2015Publication date: December 8, 2016Inventors: Ting-Chang CHANG, Hua-Mao CHEN, Ming-Yen TSAI, Min-Chen CHEN
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Patent number: 9443965Abstract: A method for producing a thin film transistor includes forming a transistor prototype on a substrate. The transistor prototype includes two transparent electrodes adapted to form a source and a drain of a thin film transistor. Next, the two transparent electrodes of the transistor prototype are exposed in an environment full of a plasma. The plasma conducts a surface treatment on the two transparent electrodes of the transistor prototype to form the thin film transistor. The method can solve the problem of excessive contact resistance of the transparent conductive films of conventional thin film transistors.Type: GrantFiled: December 15, 2014Date of Patent: September 13, 2016Assignee: NATIONAL SUN YAT-SEN UNIVERSITYInventors: Ting-Chang Chang, Hua-Mao Chen, Ming-Yen Tsai, Tian-Yu Hsieh
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Publication number: 20160155827Abstract: A method for producing a thin film transistor includes forming a transistor prototype on a substrate. The transistor prototype includes two transparent electrodes adapted to form a source and a drain of a thin film transistor. Next, the two transparent electrodes of the transistor prototype are exposed in an environment full of a plasma. The plasma conducts a surface treatment on the two transparent electrodes of the transistor prototype to form the thin film transistor. The method can solve the problem of excessive contact resistance of the transparent conductive films of conventional thin film transistors.Type: ApplicationFiled: December 15, 2014Publication date: June 2, 2016Inventors: Ting-Chang CHANG, Hua-Mao CHEN, Ming-Yen TSAI, Tian-Yu HSIEH
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Publication number: 20160148804Abstract: A method for producing a thin film transistor includes forming a transistor prototype on a substrate, with the transistor prototype including a face having a to-be-treated portion. The to-be-treated portion of the transistor prototype is exposed in an environment full of a supercritical fluid. The supercritical fluid conducts a surface treatment on the to-be-treated portion of the transistor prototype to form a thin film transistor. The method can solve the problem of too many defects of the thin film transistor resulting from a low-temperature process.Type: ApplicationFiled: December 5, 2014Publication date: May 26, 2016Inventors: Ting-Chang Chang, Ming-Yen Tsai, Hua-Mao Chen, Tian-Yu Hsieh