Abstract: This application relates to the field of communications technologies. A method includes: A first device receives first configuration information sent by a second device. The first configuration information includes at least one of information about a reference signal, frequency range information of a radio frequency signal, or bandwidth range information. The first device measures a first reference signal set, to obtain a first measured value. The first reference signal set includes at least two reference signals. The first device determines an expansion factor ? based on the first configuration information. The first device determines a second measured value based on the first measured value and the expansion factor ?.

Abstract: An information transmission method comprising configuring, by a network device, first beam sequence information, where the first beam sequence information indicates a plurality of pieces of first identification information, and where each of the plurality of pieces of first identification information indicates one beam that carries a transmission signal, sending, by the network device, the first beam sequence information to a terminal device, and performing, by the network device, signal transmission with the terminal device using the beams indicated by the plurality of pieces of first identification information.

Abstract: A beam indication device and method, the method including receiving first information from a network device, where the first information is used to determine at least one of a first receive beam for a downlink signal or a first transmit beam for an uplink signal, and determining the at least one of the first receive beam for the downlink signal or the first transmit beam for the uplink signal based on the first information.

Abstract: The present application discloses an HV device, comprising: a gate dielectric layer formed in a first trench and a second dielectric layer formed in a second trench. A second side face of a drain shallow trench isolation is aligned with a first side face of the first trench. A second side face of the second trench is aligned with a first side face of the drain shallow trench isolation. A drain high voltage diffusion region is formed in a first high voltage well region, and the drain shallow trench isolation is located in the drain high voltage diffusion region. A drain region is formed in a surface region of the drain high voltage diffusion region outside the first side face of the second dielectric layer. The present application also discloses a method for manufacturing an HV device.

Abstract: The present application discloses an HV device, comprising: a gate dielectric layer formed in a first trench, a gate conductive material layer formed on the surface of the gate dielectric layer, and a second dielectric layer filling a second trench formed between a second side face of a drain shallow trench isolation and a first side face of the first trench. The depths of the first trench and the second trench are equal. The first trench and the second trench connect with each other to form an overall trench. Bottom surfaces of the second dielectric layer and the gate dielectric layer are flush with each other. A first side face of the gate conductive material layer extends to the surface of the second dielectric layer. The present application also discloses a method for manufacturing the HV device.

Abstract: The present application discloses a method for manufacturing a SONOS memory, including: providing a substrate, wherein a first transistor gate of the SONOS memory and a first layer used for forming a second transistor gate are formed on the substrate; forming a patterned second layer on the upper surface of the first layer, wherein the second layer exposes the first layer corresponding to the outer side of the second transistor gate; performing first etching on the first layer exposed by the second layer; removing the second layer; and performing second etching on the first layer to form the second transistor gate. The present application also discloses a SONOS memory. The present application can form a vertical structure outside a selective transistor and a storage transistor, thus forming a vertical side wall in the subsequent process, so as to improve the performance of the device.

Abstract: This application relates to the field of communications technologies. A method includes: A first device receives first configuration information sent by a second device. The first configuration information includes at least one of information about a reference signal, frequency range information of a radio frequency signal, or bandwidth range information. The first device measures a first reference signal set, to obtain a first measured value. The first reference signal set includes at least two reference signals. The first device determines an expansion factor ? based on the first configuration information. The first device determines a second measured value based on the first measured value and the expansion factor ?.

Abstract: A self-service apparatus having a three-layer system architecture includes an application-layer device, an intermediate-layer device, and bottom-layer peripheral devices. The application-layer device is configured to provide a user interface for self-service and control the entire self-service apparatus according to an interaction with the user to provide the user with required self-service, and comprises a first processor and a first memory. The first processor executes an application program stored in the first memory and communicates with the intermediate-layer device. The intermediate-layer device comprises a terminal control module which comprises a second processor and a second memory. The second processor communicates with the bottom-layer peripheral devices, and the second processor executes a control program stored in the second memory to control operations of the peripheral devices based on an instruction from the application-layer device.

Abstract: A method for rapidly detecting pesticides based on thin-layer chromatography (TLC) and enzyme inhibition principles. The method includes the following steps: cutting a TLC plate into a rectangle, and using one end of the rectangle to contact a sample extract to form a pesticide residue separation area; covering the other end of the rectangle with a small piece cut from filter paper or glass fiber and fixing on a piece of enzyme inhibition reaction test paper to form a pesticide enrichment area; pasting a side of the enzyme inhibition reaction test paper away from the pesticide residue separation area with a piece of filter paper immobilized with a chromogenic agent to form a substrate color development area; and performing color reaction.

Abstract: The present disclosure relates to an object recognition system and method. The system comprises: an illumination apparatus configured to generate an illumination light for illuminating an object; a lighting sensor configured to acquire a first lighting parameter of an ambient light in a recognition environment in which the object is located; an imaging apparatus configured to acquire imaging data of the object; a first controller communicatively connected with the illumination apparatus and the lighting sensor, and configured to control a second lighting parameter of the illumination light generated by the illumination apparatus according to the first lighting parameter, until the first lighting parameter of the ambient light is within a preset parameter range; and a processor communicatively connected with the imaging apparatus and the first controller, and configured to recognize the object according to imaging data of the object under the ambient light within the preset parameter range.

Abstract: Embodiments of this application provide a synchronization signal transmission method, a network device, and a terminal device. The method includes: determining, by a network device, time domain positions for sending m synchronization signal blocks, where the time domain positions are {s1, s2, . . . , sm}+n×T, s1 represents a start symbol index of the first synchronization signal block in a time unit, s2 represents a start symbol index of the second synchronization signal block in the time unit, sm represents a start symbol index of an mth synchronization signal block in the time unit, the time unit includes T symbols; and sending, by the network device, the synchronization signal blocks to a terminal device in the time domain positions of the synchronization signal blocks. The technical solutions provided in this application have relatively high flexibility, and can meet, to some extent, a synchronization signal block sending requirement for a high-frequency technology.

Abstract: The present disclosure is related to terrein functioning as a biopesticide formulation in drought resistance and growth promotion of crops. The formulation containing terrein can be treated by soaking or spraying on the crops. It is especially suitable for drought and water shortage conditions, promoting growth of plant root length, seedling height, fresh weight, and dry weight, greatly increasing crop yield, and significantly improving drought resistance of crop plants. Under the condition of seed soaking treatment with 10 ?g/mL terrein, promotion rates of root length, seedling height, fresh weight, and dry weight of pakchoi are 99.19%, 15.66%, 40.34%, and 49.12%, respectively. The source of terrein is easy to obtain and the cost is low. It has a simple structure and is easily soluble in water. In the actual application process, it only needs to simply prepare an aqueous solution or mix with other pesticide formulations for seed soaking or spraying treatment.

Abstract: The disclosure discloses a global shutter CMOS image sensor, which adopts non-uniform storage diffusion region doping to reduce the junction leakage at storage points, so as to ensure that with the increase of the depth of photodiodes and the increase of pixels, all carriers in rows read subsequently can be transferred to storage diffusion regions, the loss of the carriers in the storage diffusion regions is not caused when a global shutter transistor is turned on, and the carriers can be completely transferred from the storage diffusion regions to floating diffusion regions through second transfer transistors even if the number of rows of pixel units increases during reading-out row by row. The disclosure further discloses a method for making the global shutter CMOS image sensor.

Abstract: This application provides a method and an apparatus for determining an effective time of a timing advance (TA). The method includes: determining a first subcarrier spacing from M subcarrier spacings, where the M subcarrier spacings are subcarrier spacings of L carriers used by a terminal device, and L?M?2; and determining an effective time of a timing advance (TA) of each of the L carriers based on the first subcarrier spacing.

Abstract: This application relates to the field of communications technologies. A method includes: A first device receives first configuration information sent by a second device. The first configuration information includes at least one of information about a reference signal, frequency range information of a radio frequency signal, or bandwidth range information. The first device measures a first reference signal set, to obtain a first measured value. The first reference signal set includes at least two reference signals. The first device determines an expansion factor ? based on the first configuration information. The first device determines a second measured value based on the first measured value and the expansion factor ?.

Abstract: The present disclosure provides a stack capacitor, a flash memory device, and a manufacturing method thereof. The stack capacitor of the flash memory device has a a memory transistor structure which at least comprises a substrate, and a tunneling oxide layer, a floating gate layer, an interlayer dielectric layer and a control gate layer which are sequentially stacked on the substrate, the interlayer dielectric layer of the stack capacitor comprises a first oxide layer and a nitride layer; the stack capacitor further comprises a first contact leading out of the control gate layer and a second contact leading out of the floating gate layer. The capacitance per unit area of the stack capacitor provided by the disclosure is effectively improved, and the size of the transistor device is reduced. The manufacturing method according to the disclosure does not add any additional photomask than a conventional process flow.

Abstract: This application provides a system information redundancy version determining method and apparatus. A communications device determines at least one time-domain resource unit Ux, and determines a redundancy version RVx for system information on the time-domain resource unit Ux according to the time-domain resource unit Ux, where x is an identifier of the time-domain resource unit, the redundancy version RVx satisfies RVx=(Int1(X1/X2*(Int2(x/M) mod K))) mod L, x is a non-negative integer, X1 and X2 are non-zero real numbers, M is a positive real number, K and L are positive integers, mod indicates a modulo operation, Int1 indicates rounding up or rounding down, and Int2 indicates rounding up or rounding down.

Abstract: The disclosure discloses a global shutter CMOS image sensor, which adopts non-uniform storage diffusion region doping to reduce the junction leakage at storage points, so as to ensure that with the increase of the depth of photodiodes and the increase of pixels, all carriers in rows read subsequently can be transferred to storage diffusion regions, the loss of the carriers in the storage diffusion regions is not caused when a global shutter transistor is turned on, and the carriers can be completely transferred from the storage diffusion regions to floating diffusion regions through second transfer transistors even if the number of rows of pixel units increases during reading-out row by row. The disclosure further discloses a method for making the global shutter CMOS image sensor.