Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 ?m thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 ?m thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 ?m thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 ?m thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 ?m thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

Abstract: An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds.

Abstract: Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.

Abstract: Semiconductor devices are fabricated by providing a growth substrate having a thickness within a preselected range and then bonding a lower surface of the growth substrate to an upper surface of the carrier substrate to form a composite substrate. One or more semiconductor growth processes are performed at one or more growth temperatures of at least 500° C. to form one or more semiconductor layers on an upper surface of the composite substrate. The growth substrate is separated from the carrier substrate after the one or more semiconductor growth processes are completed so that the carrier substrate may be reused with a second growth substrate.

Abstract: A light emitting diode is disclosed that includes a light emitting active structure formed from the Group III nitride material system, a bonding structure supporting the Group III nitride active structure, and a mounting substrate supporting the bonding structure. The mounting substrate includes a material that reflects at least fifty percent of light having the frequencies emitted by the active structure.

Abstract: A semiconductor wafer, substrate, and bonding structure is disclosed that includes a device wafer that includes, for example, a plurality of light emitting diodes, a contact metal layer (or layers) on one side of the device wafer opposite the light emitting diodes, and a bonding metal system on the contact metal layer that predominates by weight in nickel and tin.

Abstract: A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors.

Abstract: Light emitting devices include a light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate. A phosphor layer and/or a molded dome may be provided on the conformal gel layer. The conformal gel layer may be fabricated by spraying and/or dispensing the gel that is diluted in the solvent.

Abstract: A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.

Abstract: Light emitting devices include a light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate. A phosphor layer and/or a molded dome may be provided on the conformal gel layer. The conformal gel layer may be fabricated by spraying and/or dispensing the gel that is diluted in the solvent.

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.

Abstract: A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1?x?yN, where 0?x?1 and 0?y<1 and (x+y)?1; a second n-type cladding layer of AlxInyGa1?x?yN, where 0?x?1 and 0?y<1 and (x+y)?1, wherein the second n-type cladding layer is further characterized by the substantial absence of magnesium; an active portion between the first and second cladding layers in the form of a multiple quantum well having a plurality of InxGa1?xN well layers where 0<x<1 separated by a corresponding plurality of AlxInyGa1?x?yN barrier layers where 0?x?1 and 0?y?1; a p-type layer of a Group III nitride, wherein the second n-type cladding layer is positioned between the p-type layer and the multiple quantum well; and wherein the first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of the well layers.