Patents by Inventor Huadong Gan
Huadong Gan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10727400Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a non-magnetic metal layer formed adjacent to the magnetic free layer structure; an oxide layer formed adjacent to the non-magnetic metal layer; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the non-magnetic metal layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.Type: GrantFiled: August 24, 2018Date of Patent: July 28, 2020Assignee: Avalanche Technology, Inc.Inventors: Zihui Wang, Yiming Huai, Huadong Gan, Yuchen Zhou
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Patent number: 10361362Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer made of a material comprising cobalt and formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an iridium layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the iridium layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.Type: GrantFiled: November 16, 2017Date of Patent: July 23, 2019Assignee: Avalanche Technology, Inc.Inventors: Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang
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Patent number: 10347691Abstract: The present invention is directed to a magnetic structure, which includes a magnetic fixed layer structure formed on top of a seed layer structure. The seed layer structure includes one or more layers of a first transition metal, which may be platinum, palladium, nickel, or iridium, interleaved with one or more layers of a second transition metal, which may be tantalum, titanium, vanadium, molybdenum, chromium, tungsten, zirconium, hafnium, or niobium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first magnetic material interleaved with layers of the first transition metal. The first magnetic material may be made of cobalt.Type: GrantFiled: August 10, 2018Date of Patent: July 9, 2019Assignee: Avalanche Technology, Inc.Inventors: Yiming Huai, Bing K. Yen, Huadong Gan
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Publication number: 20190013461Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a non-magnetic metal layer formed adjacent to the magnetic free layer structure; an oxide layer formed adjacent to the non-magnetic metal layer; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the non-magnetic metal layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.Type: ApplicationFiled: August 24, 2018Publication date: January 10, 2019Inventors: Zihui Wang, Yiming Huai, Huadong Gan, Yuchen Zhou
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Publication number: 20190006414Abstract: The present invention is directed to a magnetic structure, which includes a magnetic fixed layer structure formed on top of a seed layer structure. The seed layer structure includes one or more layers of a first transition metal, which may be platinum, palladium, nickel, or iridium, interleaved with one or more layers of a second transition metal, which may be tantalum, titanium, vanadium, molybdenum, chromium, tungsten, zirconium, hafnium, or niobium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first magnetic material interleaved with layers of the first transition metal. The first magnetic material may be made of cobalt.Type: ApplicationFiled: August 10, 2018Publication date: January 3, 2019Inventors: Yiming Huai, Bing K. Yen, Huadong Gan
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Patent number: 10090456Abstract: The present invention is directed to a magnetic tunnel junction (MTJ) memory element including a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer; a magnesium oxide layer formed adjacent to the magnetic fixed layer; and a metal layer comprising nickel and chromium formed adjacent to the magnesium oxide layer. The magnetic reference layer structure includes a first and a second magnetic reference layers with a first perpendicular enhancement layer (PEL) interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction opposite to the first invariable magnetization direction.Type: GrantFiled: July 27, 2017Date of Patent: October 2, 2018Assignee: Avalanche Technology, Inc.Inventors: Yiming Huai, Huadong Gan, Zihui Wang
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Patent number: 10079338Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an oxide layer formed adjacent to the magnetic free layer structure; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the oxide layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.Type: GrantFiled: October 26, 2017Date of Patent: September 18, 2018Assignee: Avalanche Technology, Inc.Inventors: Yiming Huai, Huadong Gan, Bing K. Yen
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Patent number: 10050083Abstract: The present invention is directed to an MTJ memory element, which comprises a magnetic fixed layer structure formed on top of a seed layer structure that includes a first seed layer and a second seed layer. The first seed layer includes one or more layers of nickel interleaved with one or more layers of a transition metal, which may be tantalum, titanium, or vanadium. The second seed layer is made of an alloy or compound comprising nickel and another transition metal, which may be chromium, tantalum, or titanium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first type material interleaved with layers of a second type material with at least one of the first and second type materials being magnetic. The first and second type materials may be cobalt and nickel, respectively.Type: GrantFiled: August 25, 2017Date of Patent: August 14, 2018Assignee: Avalanche Technology, Inc.Inventors: Huadong Gan, Bing K. Yen, Yiming Huai
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Patent number: 10032979Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof.Type: GrantFiled: November 17, 2017Date of Patent: July 24, 2018Assignee: Avalanche Technology, Inc.Inventors: Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang, Bing K. Yen, Xiaojie Hao, Pengfa Xu
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Patent number: 10008540Abstract: The present invention is directed to a spin-orbitronics device including an array of MTJs with each of the MTJs coupled to a respective one of a plurality of selection transistors; a plurality of transverse polarizing lines with each of the transverse polarizing lines coupled to a row of the MTJs along a first direction; a plurality of word lines with each of the word lines coupled to gates of a row of the selection transistors along a second direction; and a plurality of source lines with each of the source lines coupled to a row of the selection transistors along a direction substantially perpendicular to the second direction. Each MTJ includes a magnetic comparison layer structure having a pseudo-invariable magnetization direction, which is configured to switch between two stable states by passing a comparison current through one of the plurality of transverse polarizing lines formed adjacent to the magnetic comparison layer structure.Type: GrantFiled: May 4, 2017Date of Patent: June 26, 2018Assignee: Avalanche Technology, Inc.Inventors: Parviz Keshtbod, Xiaobin Wang, Kimihiro Satoh, Zihui Wang, Huadong Gan
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Patent number: 10008663Abstract: The present invention is directed to an MTJ memory element, which includes a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure formed adjacent to the tunnel junction layer and having a first invariable magnetization direction perpendicular to a layer plane thereof; an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure; and a magnetic fixed layer structure formed adjacent to the anti-ferromagnetic coupling layer and having a second invariable magnetization direction that is perpendicular to a layer plane thereof and is opposite to the first invariable magnetization direction. The magnetic fixed layer structure includes multiple stacks of a trilayer unit structure, which includes three layers of different materials with at least one of the three layers of different materials being magnetic.Type: GrantFiled: April 19, 2017Date of Patent: June 26, 2018Assignee: Avalanche Technology, Inc.Inventors: Xiaojie Hao, Zihui Wang, Huadong Gan, Yuchen Zhou, Yiming Huai
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Publication number: 20180090675Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer made of a material comprising cobalt and formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an iridium layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the iridium layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.Type: ApplicationFiled: November 16, 2017Publication date: March 29, 2018Inventors: Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang
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Publication number: 20180083187Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an oxide layer formed adjacent to the magnetic free layer structure; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the oxide layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.Type: ApplicationFiled: October 26, 2017Publication date: March 22, 2018Inventors: Yiming Huai, Huadong Gan, Bing K. Yen
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Publication number: 20180076384Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof.Type: ApplicationFiled: November 17, 2017Publication date: March 15, 2018Inventors: Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang, Bing K. Yen, Xiaojie Hao, Pengfa Xu
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Patent number: 9871191Abstract: The present invention is directed to an MRAM device comprising a plurality of MTJ memory elements. Each of the memory elements includes a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.Type: GrantFiled: June 3, 2015Date of Patent: January 16, 2018Assignee: Avalanche Technology, Inc.Inventors: Yuchen Zhou, Yiming Huai, Zihui Wang, Xiaojie Hao, Huadong Gan, Xiaobin Wang
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Patent number: 9871190Abstract: The present invention is directed to an MRAM device comprising a plurality of MTJ memory elements. Each of the memory elements includes a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.Type: GrantFiled: April 28, 2014Date of Patent: January 16, 2018Assignee: Avalanche Technology, Inc.Inventors: Huadong Gan, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Zihui Wang
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Publication number: 20170352701Abstract: The present invention is directed to an MTJ memory element, which comprises a magnetic fixed layer structure formed on top of a seed layer structure that includes a first seed layer and a second seed layer. The first seed layer includes one or more layers of nickel interleaved with one or more layers of a transition metal, which may be tantalum, titanium, or vanadium. The second seed layer is made of an alloy or compound comprising nickel and another transition metal, which may be chromium, tantalum, or titanium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first type material interleaved with layers of a second type material with at least one of the first and second type materials being magnetic. The first and second type materials may be cobalt and nickel, respectively.Type: ApplicationFiled: August 25, 2017Publication date: December 7, 2017Inventors: Huadong Gan, Bing K. Yen, Yiming Huai
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Patent number: 9831421Abstract: The present invention is directed to an MTJ memory element including a magnetic free layer structure which includes one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagneticType: GrantFiled: July 13, 2015Date of Patent: November 28, 2017Assignee: Avalanche Technology, Inc.Inventors: Zihui Wang, Huadong Gan, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Bing K. Yen, Xiaojie Hao
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Publication number: 20170324027Abstract: The present invention is directed to a magnetic tunnel junction (MTJ) memory element including a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer; a magnesium oxide layer formed adjacent to the magnetic fixed layer; and a metal layer comprising nickel and chromium formed adjacent to the magnesium oxide layer. The magnetic reference layer structure includes a first and a second magnetic reference layers with a first perpendicular enhancement layer (PEL) interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction opposite to the first invariable magnetization direction.Type: ApplicationFiled: July 27, 2017Publication date: November 9, 2017Inventors: Yiming Huai, Huadong Gan, Zihui Wang
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Patent number: 9793319Abstract: The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving multiple layers of a first transition metal with multiple layers of a second transition metal; and a first magnetic layer formed on top of the multilayered seed structure. The first magnetic layer has a multilayer structure formed by interleaving layers of the first transition metal with layers of a magnetic material and has a first fixed magnetization direction substantially perpendicular to a layer plane thereof. The first transition metal is platinum or palladium, while the second transition metal is selected from the group consisting of tantalum, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, and tungsten.Type: GrantFiled: October 17, 2016Date of Patent: October 17, 2017Assignee: Avalanche Technology, Inc.Inventors: Huadong Gan, Yiming Huai, Bing K. Yen, Roger K. Malmhall, Yuchen Zhou