Abstract: A flexible display module and an electronic device are provided. The flexible display module includes a flexible substrate and a plurality of pixel units. The flexible substrate has a folding region that is provided with a first gap. The first gap extends from a first side surface to a second side surface in a thickness direction of the flexible substrate. A first preset distance is reserved between one end of the first gap and the second side surface of the flexible substrate. The first gap penetrates through the flexible substrate along a lengthwise direction or a width direction of the flexible substrate. A plurality of pixel units are distributed on the first side surface of the flexible substrate at intervals. The pixel units adjacent to the first gap are spaced apart from the first gap.

Abstract: The disclosure provides a display panel, a manufacturing method thereof, and a display device. The display panel includes a substrate layer, a gate layer, an insulating layer, and an active layer. The gate layer is disposed on the substrate layer and includes a first gate layer and a second gate layer. The second gate layer is disposed on a surface of the first gate layer. The insulating layer covers the gate layer and the substrate layer. The active layer is disposed on a surface of the insulating layer away from the gate layer. The active layer includes a first layer section and a second layer section connected to the first layer section, and a surface of the second layer section is above a surface of the first section layer.

Abstract: The disclosure provides a display panel, a manufacturing method thereof, and a display device. The display panel includes a substrate layer, a gate layer, an insulating layer, and an active layer. The gate layer is disposed on the substrate layer and includes a first gate layer and a second gate layer. The second gate layer is disposed on a surface of the first gate layer. The insulating layer covers the gate layer and the substrate layer. The active layer is disposed on a surface of the insulating layer away from the gate layer. The active layer includes a first layer section and a second layer section connected to the first layer section, and a surface of the second layer section is above a surface of the first section layer.

Abstract: A method of manufacturing an inverter and an inverter are provided. The method of manufacturing the inverter includes following steps: forming a substrate and forming a first insulating layer on the substrate; forming a semiconductor-type carbon nanotube film on the first insulating layer; patterning the semiconductor-type carbon nanotube film to form a first active layer and a second active layer arranged at an interval; forming a first barrier layer on the first active layer and forming a second barrier layer on the second active layer, wherein the first barrier layer is an electrophilic film layer, and the second barrier layer is an electron donor film layer; and forming a first source and a first drain which are in contact with and spaced apart from two ends of the first active layer and forming a second source and a second drain which are in contact with and spaced with two ends of the second active layer, wherein the first drain is connected to the second source.

Abstract: A thin-film transistor and a manufacturing method thereof are provided, and the manufacturing method includes: forming a source electrode, a drain electrode and a planarization layer on a substrate, and patterning the planarization layer to form a first portion disposed between the source electrode and the drain electrode, a second portion disposed at a side of the source drain, and a third portion disposed at a side of the drain electrode. Upper surfaces of all the first portion, the second portion, and the third surface are flush with top portions of both the source electrode and the drain electrode.

Abstract: A thin film transistor, a manufacturing method of the same, and a CMOS inverter are provided. The thin film transistor includes a base substrate, a dielectric layer, and a semiconductor layer. A first channel is provided between the source and the drain. Carbon nanotubes are provided in the first channel. A second channel is provided between the drain and the gate. An ion gel is provided in the second channel. By regulating a composition of the ion gel and a content of a dopant, a threshold voltage of a carbon nanotube thin film transistor is effectively controlled.

Abstract: The invention discloses a thin film transistor, a display panel and a method of fabricating the thin film transistor. The thin film transistor includes a substrate, a flat film, a dielectric layer, an active layer, and a source/drain layer which are stacked in sequence from bottom to top; and a plurality of reinforcing portions are disposed on an upper surface of the flat film, wherein the flat film and the reinforcing portions constitute a gate layer, wherein the reinforcing portions are configured to increase an area of the upper surface of the flat film, so as to increase an effective overlapping area between the flat film and the active layer, and reduce a width and a length of the thin film transistor.

Abstract: The present disclosure provides a manufacturing method of a complementary metal-oxide-semiconductor (CMOS) inverter includes annealing a substrate printed with an oxide ink to obtain a first active layer, printing a carbon tube ink between a first source and the first drain to form a second active layer for obtaining a first thin-film transistor (TFT), forming a second source and a second drain on two sides of the first active layer to obtain a second TFT, and forming wires between the first TFT and the second TFT.

Abstract: The present disclosure provides a manufacturing method of a complementary metal-oxide-semiconductor (CMOS) inverter includes annealing a substrate printed with an oxide ink to obtain a first active layer, printing a carbon tube ink between a first source and the first drain to form a second active layer for obtaining a first thin-film transistor (TFT), forming a second source and a second drain on two sides of the first active layer to obtain a second TFT, and forming wires between the first TFT and the second TFT.

Abstract: A thin film transistor, a manufacturing method of the same, and a CMOS inverter are provided. The thin film transistor includes a base substrate, a dielectric layer, and a semiconductor layer. A first channel is provided between the source and the drain. Carbon nanotubes are provided in the first channel. A second channel is provided between the drain and the gate. An ion gel is provided in the second channel. By regulating a composition of the ion gel and a content of a dopant, a threshold voltage of a carbon nanotube thin film transistor is effectively controlled.

Abstract: A method of manufacturing an inverter and an inverter are provided. The method of manufacturing the inverter includes following steps: forming a substrate and forming a first insulating layer on the substrate; forming a semiconductor-type carbon nanotube film on the first insulating layer; patterning the semiconductor-type carbon nanotube film to form a first active layer and a second active layer arranged at an interval; forming a first barrier layer on the first active layer and forming a second barrier layer on the second active layer, wherein the first barrier layer is an electrophilic film layer, and the second barrier layer is an electron donor film layer; and forming a first source and a first drain which are in contact with and spaced apart from two ends of the first active layer and forming a second source and a second drain which are in contact with and spaced with two ends of the second active layer, wherein the first drain is connected to the second source.

Abstract: A method of manufacturing a display panel is that when the preparation of a front side of the display panel is finished, a structure composed of a protective layer, a sacrificial layer, a planarization layer, and a passivation layer is introduced as a protective film. The protective film structure does not contaminate vacuum equipment such as CVD or PVD. Moreover, the protective film structure has characteristics of hardness and abrasion resistance, so it does not produce residual stripper on the conveyor and does not interfere with the manufacturing process for the back side of the display panel. Moreover, the flatness of a surface of the film layer formed by CVD and coating machine is conducive to transfer and adsorption. The protective film may be completely removed by the means of LLO and dry-etching. The method of the process can effectively realize the double-sided process for single glass.

Abstract: A method of manufacturing a display panel is that when the preparation of a front side of the display panel is finished, a structure composed of a protective layer, a sacrificial layer, a planarization layer, and a passivation layer is introduced as a protective film. The protective film structure does not contaminate vacuum equipment such as CVD or PVD. Moreover, the protective film structure has characteristics of hardness and abrasion resistance, so it does not produce residual stripper on the conveyor and does not interfere with the manufacturing process for the back side of the display panel. Moreover, the flatness of a surface of the film layer formed by CVD and coating machine is conducive to transfer and adsorption. The protective film may be completely removed by the means of LLO and dry-etching. The method of the process can effectively realize the double-sided process for single glass.

Abstract: Disclosed is a manufacturing method of a thin film transistor, comprising: sequentially preparing a gate, a gate insulation layer and an active layer on the substrate; preparing an etching stopper layer on the active layer; depositing an ohmic contact layer film on the etching stopper layer and the active layer, and depositing a source drain conductive film on the ohmic contact layer film; processing the source drain conductive film to form a source and a drain, which are patterned, and processing the ohmic contact layer film by a dry etching process to form an ohmic contact layer, which is patterned; removing the etching stopper layer after preparing the ohmic contact layer. Since the etching stopper layer is disposed above the channel of the transistor before preparing the ohmic contact layer, the damage to the active layer by dry etching can be effectively avoided to improve the performance of the transistor.

Abstract: A thin-film transistor and a manufacturing method thereof are provided, and the manufacturing method includes: forming a source electrode, a drain electrode and a planarization layer on a substrate, and patterning the planarization layer to form a first portion disposed between the source electrode and the drain electrode, a second portion disposed at a side of the source drain, and a third portion disposed at a side of the drain electrode. Upper surfaces of all the first portion, the second portion, and the third surface are flush with top portions of both the source electrode and the drain electrode.

Abstract: The invention discloses a thin film transistor, a display panel and a method of fabricating the thin film transistor. The thin film transistor includes a substrate, a gate layer, a dielectric layer, an active layer, and a source/drain layer which are stacked in sequence from bottom to top; and a plurality of reinforcing portions are disposed on an upper surface of the gate layer, wherein the reinforcing portions are configured to increase an area of the upper surface of the gate layer, so as to increase an effective abutting area between the gate layer and the active layer, and reduce a width and a length of the thin film transistor, and reduce a parasitic capacitance of the thin film transistor.

Abstract: Disclosed is a manufacturing method of a thin film transistor, comprising: sequentially preparing a gate, a gate insulation layer and an active layer on the substrate; preparing an etching stopper layer on the active layer; depositing an ohmic contact layer film on the etching stopper layer and the active layer, and depositing a source drain conductive film on the ohmic contact layer film; processing the source drain conductive film to form a source and a drain, which are patterned, and processing the ohmic contact layer film by a dry etching process to form an ohmic contact layer, which is patterned; removing the etching stopper layer after preparing the ohmic contact layer. Since the etching stopper layer is disposed above the channel of the transistor before preparing the ohmic contact layer, the damage to the active layer by dry etching can be effectively avoided to improve the performance of the transistor.

Abstract: A photochromic mixture including a photochromic material and a thermosetting transparent polymer material, which are uniformly mixed and dissolved in a solvent, is provided. A formation method of a photochromic device based on the photochromic mixture and a light-transmissive head-mounted display device with the photochromic device are further provided. In the photochromic mixture, the change in the structure of the photochromic material under UV light and room light causes a significant change in its absorption spectrum so the color changes. This property is utilized for the benefits: First, the contrast of the head-mounted display device under strong light irradiation is improved. The display effect is enhanced. Second, the damage to human eye by UV light at the natural environment is reduced. Third, under the same optical requirement, the required energy consumption of self-light-emitting elements in the light-transmissive head-mounted display device is correspondingly reduced.

Abstract: The present invention provides a display device and a manufacturing method thereof, the method comprising: providing a backplate, the backplate comprises a substrate and a driving circuit set on the substrate; providing a plurality of LED chips; transferring the LED chips vertically to the backplate to electrically connect the bottom electrode of the LED chips to the driving circuit; providing a cover plate, the cover plate comprises a plate body and a ground circuit set on the plate body; covering the backplate with the cover plate, such that the ground circuit is aligned with at least a portion of the driving circuit, and the top electrode of each of the LED chips is electrically connected to the ground circuit; and pressing the cover plate, such that the LED chips are tilted relative to a vertical direction.

Abstract: The invention provides a TFT array substrate and manufacturing method thereof. The manufacturing method adopts a dual-layer structure for the active layer. The first active layer adopts a new semiconductor material of carbon nanotubes, graphene, silicon carbide, molybdenum disulfide or organic semiconductor materials. The second active layer is disposed on the first active layer to protect the first active layer of the new semiconductor material from the wet etching and CVD process as an etch stop layer and facilitates the active layer of the TFT device to possess combined excellent properties of two semiconductor materials.