Patents by Inventor Huai-Cheng Lin

Huai-Cheng Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240321998
    Abstract: A semiconductor structure includes a gate, an active layer, a gate insulator layer, a source, and a drain. The active layer has a source region, a drain region, and a channel region. The semiconductor structure satisfies at least one of the following conditions: (1) a material of the active layer includes a-Si, and a first thickness and a second thickness of the active layer respectively in the source region and the drain region are respectively greater than a third thickness of the active layer in the channel region; (2) the gate insulator layer includes a first gate insulator layer, a third gate insulator layer, and a second gate insulator layer located between the first and third gate insulator layers. A material of the first gate insulator layer is identical to a material of the third gate insulator layer but different from a material of the second gate insulator layer.
    Type: Application
    Filed: February 19, 2024
    Publication date: September 26, 2024
    Applicant: E Ink Holdings Inc.
    Inventors: Ming-Kai Chuang, Huai-Cheng Lin, Ming-Sheng Chiang, Lih-Hsiung Chan
  • Patent number: 9399336
    Abstract: A gas barrier substrate including a flexible base material, at least one first inorganic gas barrier layer and at least one second inorganic gas barrier layer is provided. The flexible base material has an upper surface. The first inorganic gas barrier layer is disposed on the flexible base material and covers the upper surface. The second inorganic gas barrier layer is disposed on the first inorganic gas barrier layer and covers the first inorganic gas barrier layer. A water vapor and oxygen transmission rate of the second inorganic gas barrier layer is lower than that of the first inorganic gas barrier layer.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: July 26, 2016
    Assignee: E Ink Holdings Inc.
    Inventors: Lih-Hsiung Chan, Huai-Cheng Lin, Chih-Cheng Wang
  • Patent number: 9117706
    Abstract: A pixel structure includes a flexible substrate, an active device, a conductive pattern, a first insulation layer, and a pixel electrode. The active device is disposed on the flexible substrate and includes a gate, a channel, a source, and a drain. The source and the drain are connected to the channel and are separated from each other. The channel and the gate are stacked in a thickness direction. The active device is disposed between the conductive pattern and the flexible substrate. The conductive pattern is electrically connected to the drain of the active device. The first insulation layer covers the conductive pattern and has first contact holes separated from one another, and the first contact holes expose the conductive pattern. The first insulation layer is disposed between the pixel electrode and the conductive pattern. The pixel electrode is electrically connected to the conductive pattern through the first contact holes.
    Type: Grant
    Filed: January 22, 2014
    Date of Patent: August 25, 2015
    Assignee: E Ink Holdings Inc.
    Inventors: Ming-Sheng Chiang, Huai-Cheng Lin, Chih-Cheng Wang
  • Publication number: 20140264606
    Abstract: A pixel structure includes a flexible substrate, an active device, a conductive pattern, a first insulation layer, and a pixel electrode. The active device is disposed on the flexible substrate and includes a gate, a channel, a source, and a drain. The source and the drain are connected to the channel and are separated from each other. The channel and the gate are stacked in a thickness direction. The active device is disposed between the conductive pattern and the flexible substrate. The conductive pattern is electrically connected to the drain of the active device. The first insulation layer covers the conductive pattern and has first contact holes separated from one another, and the first contact holes expose the conductive pattern. The first insulation layer is disposed between the pixel electrode and the conductive pattern. The pixel electrode is electrically connected to the conductive pattern through the first contact holes.
    Type: Application
    Filed: January 22, 2014
    Publication date: September 18, 2014
    Applicant: E Ink Holdings Inc.
    Inventors: Ming-Sheng Chiang, Huai-Cheng Lin, Chih-Cheng Wang
  • Publication number: 20140158663
    Abstract: A surface treatment method for a flexible substrate is provided. A flexible insulation substrate is provided. A surface of the flexible insulation substrate has at least one defect. A plasma etching is performed on the flexible insulation substrate to smooth a profile of the defect.
    Type: Application
    Filed: August 7, 2013
    Publication date: June 12, 2014
    Applicant: E Ink Holdings Inc.
    Inventors: Lih-Hsiung Chan, Huai-Cheng Lin, Ming-Sheng Chiang, Chih-Cheng Wang
  • Publication number: 20140030494
    Abstract: A gas barrier substrate including a flexible base material, at least one first inorganic gas barrier layer and at least one second inorganic gas barrier layer is provided. The flexible base material has an upper surface. The first inorganic gas barrier layer is disposed on the flexible base material and covers the upper surface. The second inorganic gas barrier layer is disposed on the first inorganic gas barrier layer and covers the first inorganic gas barrier layer. A water vapor and oxygen transmission rate of the second inorganic gas barrier layer is lower than that of the first inorganic gas barrier layer.
    Type: Application
    Filed: March 15, 2013
    Publication date: January 30, 2014
    Applicant: E INK HOLDINGS INC.
    Inventors: Lih-Hsiung Chan, Huai-Cheng Lin, Chih-Cheng Wang