Patents by Inventor Huai-Tung Yang

Huai-Tung Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heterojunction bipolar transistor structure
    Patent number: 7224005
    Abstract: A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1-x, 0.0?x?1.0) and/or indium-gallium-arsenic-nitride (InyGa1-yAszN1-z, 0.0?y, z?1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.
    Type: Grant
    Filed: September 3, 2004
    Date of Patent: May 29, 2007
    Assignee: Visual Photonics Epitaxy Co., Ltd.
    Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Huai-Tung Yang, Kun-Chuan Lin, Shih-Jane Tsai
  • Heterojunction bipolar transistor structure
    Publication number: 20050051799
    Abstract: A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1?x, 0.0?x?1.0) and/or indium-gallium-arsenic-nitride (InyGa1?yAszN1?z, 0.0?y, z?1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.
    Type: Application
    Filed: September 3, 2004
    Publication date: March 10, 2005
    Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Huai-Tung Yang, Kun-Chuan Lin, Shih-Jane Tsai
  • Integrated magnetoresistive sensor
    Patent number: 5502325
    Abstract: A magnetoresistor is monolithically integrated with an active circuit by growing a thin film magnetoresistor on a semiconductor substrate after the substrate has been doped and annealed for the active devices. The magnetoresistor is grown through a window in a mask, with the mask and magnetoresistor materials selected such that the magnetoresistor is substantially non-adherent to the mask. InSb is preferred for the magnetoresistor, Si.sub.3 N.sub.4 for the mask and GaAs for the substrate. The non-adherence allows the mask to be substantially thinner than the magnetoresistor without impairing the removal of the mask after the magnetoresistor has been established.
    Type: Grant
    Filed: May 30, 1995
    Date of Patent: March 26, 1996
    Assignee: Hughes Aircraft Company
    Inventors: Marko Sokolich, Hiroyuki Yamasaki, Huai-Tung Yang
  • Integrated magnetoresistive sensor fabrication method and apparatus
    Patent number: 5486804
    Abstract: A magnetoresistor is monolithically integrated with an active circuit by growing a thin film magnetoresistor on a semiconductor substrate after the substrate has been doped and annealed for the active devices. The magnetoresistor is grown through a window in a mask, with the mask and magnetoresistor materials selected such that the magnetoresistor is substantially non-adherent to the mask. InSb is preferred for the magnetoresistor, Si.sub.3 N.sub.4 for the mask and GaAs for the substrate. The non-adherence allows the mask to be substantially thinner than the magnetoresistor without impairing the removal of the mask after the magnetoresistor has been established.
    Type: Grant
    Filed: December 3, 1993
    Date of Patent: January 23, 1996
    Assignee: Hughes Aircraft Company
    Inventors: Marko Sokolich, Hiroyuki Yamasaki, Huai-Tung Yang