Abstract: An electro-optical modulator includes a structural substrate, having an insulating layer on top. A waveguide layer, disposed on the insulating layer. A curving resonant MOS device, disposed on the insulating layer and having an optical coupling region with the waveguide layer.

Abstract: An electro-optical modulator includes a structural substrate, having an insulating layer on top. A waveguide layer, disposed on the insulating layer. A curving resonant MOS device, disposed on the insulating layer and having an optical coupling region with the waveguide layer.

Abstract: An electro-optical modulator includes a structural substrate having insulating layer. A waveguide layer is on the insulating layer. A resonant layer on the insulating layer has a curving rim adjacent to the waveguide layer to form an optical coupling region. A gate dielectric layer covers part of the resonant layer. A dielectric layer over the resonant layer covers the gate dielectric layer. The dielectric layer has a first opening exposing part of the resonant layer and a second opening exposing the gate dielectric layer. Part of the second opening is adjacent to the curving rim of the resonant layer. A first polysilicon layer on the exposed region of the resonant layer serves as an electrode. A second polysilicon layer over the dielectric layer fills the second opening and is in contact with the gate dielectric layer. Part of the second polysilicon layer covering the dielectric layer serves as an electrode.

Abstract: An electro-optical modulator includes a structural substrate having insulating layer. A waveguide layer is on the insulating layer. A resonant layer on the insulating layer has a curving rim adjacent to the waveguide layer to form an optical coupling region. A gate dielectric layer covers part of the resonant layer. A dielectric layer over the resonant layer covers the gate dielectric layer. The dielectric layer has a first opening exposing part of the resonant layer and a second opening exposing the gate dielectric layer. Part of the second opening is adjacent to the curving rim of the resonant layer. A first polysilicon layer on the exposed region of the resonant layer serves as an electrode. A second polysilicon layer over the dielectric layer fills the second opening and is in contact with the gate dielectric layer. Part of the second polysilicon layer covering the dielectric layer serves as an electrode.

Abstract: A joystick control device having cursor correcting function, in which the conventional adjustable resistor is replaced by a photoelectric element for detecting the movement of the joystick, thereby eliminates the ill effects caused by mechanical attrition of resistor. Additionally, the parameter drifts caused by IC manufacturing processes are corrected using shift correction of joystick; therefore, every individual mass-produced IC shows similar good behavior.