Abstract: A directional coupler is disclosed integrated on a single chip and an integrated circuit based on a standard CMOS process and relates to a field of radio frequency communication. In exemplary implementations, by using a standard CMOS process technology, the directional coupler integrated by a CMOS process is formed by a coil wound by a upper layer of metal lines, a coil wound by a lower layer of metal lines, two tuning capacitor array, and a matching resistor. Two terminals of the coil are a direct terminal and an input terminal; two terminals of the coil are a coupled terminal and an isolation terminal; the terminals of the coils and are intersected at 90°; the coil is wound by an upper metal layer and the coil is wound by a lower metal layer. Further, the insertion loss is low and the isolation degree is large.

Abstract: A directional coupler is disclosed integrated on a single chip and an integrated circuit based on a standard CMOS process and relates to a field of radio frequency communication. In exemplary implementations, by using a standard CMOS process technology, the directional coupler integrated by a CMOS process is formed by a coil winded by a upper layer of metal lines, a coil winded by a lower layer of metal lines, two tuning capacitor array, and a matching resistor. Two terminals of the coil are a direct terminal and an input terminal; two terminals of the coil are a coupled terminal and an isolation terminal; the terminals of the coils and are intersected at 90°; the coil is winded by an upper metal layer and the coil is winded by a lower metal layer. Further, the insertion loss is low and the isolation degree is large.