Patents by Inventor Huai-Xin Xian

Huai-Xin Xian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method thereof
    Patent number: 11257825
    Abstract: A device includes a master latch, a slave latch and a retention latch coupled to each other. The retention latch includes first and second active areas, first and second gate structures. The first and second active areas extend in a first direction. The first gate structure extends in a second direction, the first gate structure including first and second portions that are separated from each other. The first portion is arranged over the first active area, and the second portion is arranged over the second active area. The second gate structure extends in the second direction, and is arranged over the first active area. The second gate structure is separated from the second active area and the first gate structure in a layout view. An end portion of the second active area is between the first gate structure and the second gate structure.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: February 22, 2022
    Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., TSMC Nanjing Company Limited
    Inventors: Huai-Xin Xian, Yang Zhou, Qing-Chao Meng