Patents by Inventor Huaiyang YUAN

Huaiyang YUAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin-orbit torque magnetic random access memory
    Patent number: 11276814
    Abstract: Methods and devices for a spintronic device of spin-orbit torque magnetic random access memory (SOT-MRAM) are provided. A unit cell of a device can comprise a ferromagnetic (or ferrimagnetic or antiferromagnetic) layer on the heavy metal layer, and a current source configured to transmit either non-collinear current pulses in the heavy-metal layer or two perpendicular currents in the heavy metal layer. The current pulses exhibit a phase difference, and the magnitude of a sum of the respective current pulses is constant (in its simplest form) and the flow direction of the pulses is time-dependent.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: March 15, 2022
    Assignee: The Hong Kong University of Science and Technology
    Inventors: Xiangrong Wang, Yin Zhang, Huaiyang Yuan
  • DESIGN OF SPIN-ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY
    Publication number: 20210202829
    Abstract: Methods and devices for a spintronic device of spin-orbit torque magnetic random access memory (SOT-MRAM) are provided. A unit cell of a device can comprise a ferromagnetic (or ferrimagnetic or antiferromagnetic) layer on the heavy metal layer, and a current source configured to transmit either non-collinear current pulses in the heavy-metal layer or two perpendicular currents in the heavy metal layer. The current pulses exhibit a phase difference, and the magnitude of a sum of the respective current pulses is constant (in its simplest form) and the flow direction of the pulses is time-dependent.
    Type: Application
    Filed: November 28, 2018
    Publication date: July 1, 2021
    Inventors: Xiangrong WANG, Yin ZHANG, Huaiyang YUAN