Abstract: A switching converter, control method control circuit thereof are disclosed. The switching converter converts a DC input voltage into a DC output voltage. The control circuit comprising: a compensation module, generating a ramp signal; a comparator, compares a first superimposed signal related to the DC output voltage with a second superimposed signal related to an error signal between the DC output voltage and the ramp signal; a first RS flip-flop generates a pulse width modulation signal in accordance with a set signal and a reset signal, obtains a constant on time in accordance with the reset signal, and obtains an off time related to the DC output voltage; and a driving module which converts the pulse width modulation signal into a switching control signal, wherein the compensation module adaptively adjusts the slope of the ramp signal. The control circuit adopts an adaptive ramp signal to perform compensation.

Abstract: A switching converter, control method control circuit thereof are disclosed. The switching converter converts a DC input voltage into a DC output voltage. The control circuit comprising: a compensation module, generating a ramp signal; a comparator, compares a first superimposed signal related to the DC output voltage with a second superimposed signal related to an error signal between the DC output voltage and the ramp signal; a first RS flip-flop generates a pulse width modulation signal in accordance with a set signal and a reset signal, obtains a constant on time in accordance with the reset signal, and obtains an off time related to the DC output voltage; and a driving module which converts the pulse width modulation signal into a switching control signal, wherein the compensation module adaptively adjusts the slope of the ramp signal. The control circuit adopts an adaptive ramp signal to perform compensation.

Abstract: A motor and a rotor thereof are provided. Taking the distance between the two endpoints of a permanent magnet of a motor rotor that are on the side away from the center of an iron core as the length L of the permanent magnet, and the distance between a line connecting the two endpoints of the permanent magnet that are on the side away from the center of the iron core and the center point on the side of the permanent magnet that is close to the centerline of the iron core as the width H of the permanent magnet, then H/L ? 1/10. By adjusting the relationship between the length L and width H of the permanent magnet, the air gap magnetic density of the permanent magnet can be effectively increased.

Abstract: A motor rotor includes an iron core and a permanent magnet arranged inside the iron core, wherein, a plurality of groups of mounting grooves are arranged in the iron core in a circumferential direction of the iron core, and each group of mounting grooves comprises two or more than two mounting grooves arranged at intervals in a radial direction of the iron core; and a plurality of groups of permanent magnets are provided, and each permanent magnet in each group of permanent magnets is correspondingly embedded in the corresponding mounting groove of each group of mounting grooves. A motor having the motor rotor is further provided, and the magnetic reluctance torque of the motor rotor is increased, thereby increasing the output torque of the motor and the efficiency of the motor.

Abstract: A motor rotor includes an iron core and permanent magnets provided inside the iron core. The iron core is provided with sets of mounting grooves on the iron core in the peripheral direction of the iron core, each set of mounting grooves having two or more mounting grooves provided intermittently in the radial direction of the iron core. There are sets of permanent magnets, the individual permanent magnet of each set of permanent magnets correspondingly being embedded into the individual mounting grooves of each set of mounting grooves; there is an island region between the outermost layer of mounting grooves and the periphery of the iron core, and an enhancing hole is provided in the island region, an enhancing rod being provided in the enhancing hole. A motor includes a motor stator and the motor rotor, with the motor rotor provided inside the motor stator.

Abstract: A permanent magnet synchronous electric machine includes a stator and a rotor. Multiple wire grooves are provided peripherally on the stator, coils are provided within the wire grooves, and a stator tooth is provided between adjacent wire grooves. Multiple magnetic groove sets are provided peripherally within the rotor, each of the magnetic groove sets includes at least two magnetic steel grooves, with permanent magnets placed within the magnetic steel grooves, and a magnetic tunnel formed between the magnetic steel grooves. Of two adjacent magnetic tunnels, an end of one magnetic tunnel is opposite a wire groove and an end of the other magnetic tunnel is opposite a stator tooth. The permanent magnet synchronous electric machine has a more steady output torque, and also reduces the noise and vibration provided during operation.

Abstract: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a stressing layer on a substrate. The method may include doping the stressing layer with dopants. The method may include forming a silicide layer on the stressing layer. Moreover, the stressing layer may include a first lattice constant different from a second lattice constant of the substrate.

Abstract: A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of the nFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel.

Abstract: A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of the nFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel.

Abstract: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a stressing layer on a substrate. The method may include doping the stressing layer with dopants. The method may include forming a silicide layer on the stressing layer. Moreover, the stressing layer may include a first lattice constant different from a second lattice constant of the substrate.

Abstract: Disclosed is a motor rotor, comprising an iron core (10) and permanent magnets (20) provided inside the iron core (10). The iron core (10) is provided with sets of mounting grooves (30) on the iron core (10) in the peripheral direction of the iron core, each set of mounting grooves (30) comprising two or more mounting grooves (30) provided intermittently in the radial direction of the iron core (10). There are sets of permanent magnets (20), the individual permanent magnets (20) of each set of permanent magnets (20) correspondingly being embedded into the individual mounting grooves (30) of each set of mounting grooves; there is an island region (12) between the outermost layer of mounting grooves (30) and the periphery of the iron core (10), and an enhancing hole (13) is provided in the island region (12), an enhancing rod (60) being provided in the enhancing hole (13).

Abstract: Disclosed are a motor and a rotor thereof. Taking the distance between the two endpoints of a permanent magnet (20) of a motor rotor that are on the side away from the centre of an iron core (10) as the length L of the permanent magnet, and the distance between a line connecting the two endpoints of the permanent magnet that are on the side away from the centre of the iron core (10) and the centre point on the side of the permanent magnet that is close to the centreline of the iron core as the width H of the permanent magnet, then H/L?1/10. By adjusting the relationship between the length L and width H of the permanent magnet, the air gap magnetic density of the permanent magnet can be effectively increased, i.e. increasing the permanent magnetic flux of the rotor in the directions of the d axis and q axis. Hence, the utilization rate of the permanent magnet and the performance of the rotor can be improved without increasing the number of permanent magnets used.

Abstract: Disclosed is a motor rotor, comprising an iron core (10) and permanent magnets (20) provided inside the iron core (10). The iron core (10) is provided with sets of mounting grooves (30) in the peripheral direction of the iron core, each set of mounting grooves (30) comprising two or more mounting grooves (30) provided intermittently in the radial direction of the iron core (10). There are sets of permanent magnets (20), the individual permanent magnets (20) of each set of permanent magnets (20) correspondingly being embedded into the individual mounting grooves (30) of each set of mounting grooves. Disclosed is a motor comprising the above-mentioned motor rotor. The motor rotor increases the magnetic reluctance torque of the motor rotor and thus increases the output torque of the motor and the efficiency of the motor.

Abstract: Disclosed are a motor rotor and a motor having same, wherein the motor rotor comprises an iron core (10) and permanent magnets (20) provided within the iron core (10), sets of mounting grooves (30) are provided in the peripheral direction of the iron core, with each set of mounting grooves comprising more than two mounting grooves (30) arranged intermittently in the radial direction of the iron core (10). The permanent magnets (20) are correspondingly embedded into the individual mounting grooves (30). The thickness of the permanent magnet (20) at the centre of the cross section thereof and perpendicular to the rotor axis is greater than the thickness at both ends thereof. The rotor optimizes the shape of the permanent magnets (20) and improves the efficiency of the motor.

Abstract: Disclosed is a permanent magnet synchronous motor comprising a stator (1) and a rotor (2), wherein the stator (1) is provided thereon with a plurality of wire slots (3) in a circumferential direction, the rotor (2) is provided therein with a plurality of sets of magnet slots (5) in a circumferential direction, with the wire slots (3) being provided therein with coils (4) and the sets of magnet slots (5) being provided therein with permanent magnets (7); the number of poles of the permanent magnets (7) on the rotor (2) is P, the spacing between two adjacent sets of magnet slots (5) is W, the tooth width of the stator (1) is Lc, and the number of the wire slots (3) on the stator (1) is S, wherein 3PW/LcS=K, and 0.15?K?0.85. The permanent magnet synchronous motor can reduce dependence on rare earth and improve the output torque of the permanent magnet synchronous motor.

Abstract: Disclosed is a permanent magnet synchronous electric machine, comprising a stator (1) and a rotor (2). A plurality of wire grooves (3) are provided peripherally on the stator (1), coils (4) are provided within the wire grooves (3), and a stator tooth (5) is provided between adjacent wire grooves (3). A plurality of magnetic groove sets (6) is provided peripherally within the rotor (2), each of the magnetic groove sets (6) comprising at least two magnetic steel grooves (7), with permanent magnets (8) placed within the magnetic steel grooves (7), and a magnetic channel (9) formed between the magnetic steel grooves (7). Of two adjacent magnetic channels (9), an end of one magnetic channel (9) is opposite a wire groove (3) and an end of the other magnetic channel (9) is opposite a stator tooth (5). The permanent magnet synchronous electric machine has a more steady output torque, and also reduces the noise and vibration provided during operation.

Abstract: A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of the nFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel.

Abstract: A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of the nFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel.

Abstract: A method of forming a field effect transistor creates shallower and sharper junctions, while maximizing dopant activation in processes that are consistent with current manufacturing techniques. More specifically, the invention increases the oxygen content of the top surface of a silicon substrate. The top surface of the silicon substrate is preferably cleaned before increasing the oxygen content of the top surface of the silicon substrate. The oxygen content of the top surface of the silicon substrate is higher than other portions of the silicon substrate, but below an amount that would prevent epitaxial growth. This allows the invention to epitaxially grow a silicon layer on the top surface of the silicon substrate. Further, the increased oxygen content substantially limits dopants within the epitaxial silicon layer from moving into the silicon substrate.

Abstract: A substrate material including a Si-containing substrate and an insulating region that is resistant to Ge diffusion present atop the Si-containing substrate. The substrate material further includes a substantially relaxed SiGe alloy layer present atop the insulating region, wherein the substantially relaxed SiGe alloy layer has a planar defect density from about 5000 defects/cm?2 or less. The substrate material may be employed in a heterostructure, in which a strained Si layer is present atop the substantially relaxed SiGe alloy layer of the substrate material.