Abstract: An electronic device fabrication method including: (a) providing a dielectric region and a lower electrically conductive region, wherein the dielectric region includes a plurality of pinholes each with an entry and an exit; and (b) depositing an etchant for the lower electrically conductive region into the pinholes that undercuts the pinholes to create for a number of the pinholes an overhanging surface of the dielectric region around the exit facing an undercut area of the lower electrically conductive region wider than the exit.

Abstract: A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.

Abstract: Organic thin film transistors with improved mobility are disclosed. The semiconducting layer comprises a semiconductor material of Formula (I): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl; and R3 and R4 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl. A silanized interfacial layer is also present which has alkyl sidechains extending from its surface towards the semiconducting layer.

Abstract: In accordance with the invention, there are polymers (II) having the formula: wherein R and R? are substituents comprising about 8 to about 16 carbon atoms and n represents the number of repeat unit from about 5 to about 5000; and electronic devices, such as, for example, thin film transistors including the polymer (II).

Abstract: A method of forming conductive features on a substrate, the method comprising: providing two or more solutions, wherein a metal nanoparticle solution contains metal nanoparticles with a stabilizer and a destabilizer solution contains a destabilizer that destabilizes the stabilizer, liquid depositing the metal nanoparticle solution and the destabilizer solution onto the substrate, wherein during deposition or following the deposition of the metal nanoparticle solution onto the substrate, the metal nanoparticle and the destabilizer are combined with each other, destabilizing the stabilizer from the surface of the metal nanoparticles with the destabilizer and removing the stabilizer and destabilizer from the substrate by heating the substrate to a temperature below about 180° C.

Abstract: A polymer semiconductor compound of the below formula, wherein the side chains, R1, R2, R3 and R4, are arranged in a manner that promotes high mobility and to provide a weak side chain interaction.

Abstract: A metal nanoparticle composition includes a thermally decomposable or UV decomposable stabilizer. A method of forming conductive features on a substrate, includes providing a solution containing metal nanoparticles with a stabilizer; and liquid depositing the solution onto the substrate, wherein during the deposition or following the deposition of the solution onto the substrate, decomposing and removing the stabilizer, by thermal treatment or by UV treatment, at a temperature below about 180° C. to form conductive features on the substrate.

Abstract: Metal nanoparticles with a stabilizer complex of a carboxylic acid-amine on a surface thereof is formed by reducing a metal carboxylate in the presence of an organoamine and a reducing agent compound. The metal carboxylate may include a carboxyl group having at least four carbon atoms, and the amine may include an organo group having from 1 to about 20 carbon atoms.

Abstract: A method of forming a conductive ink silver features on a substrate by printing a silver compound solution and a hydrazine compound reducing agent solution on the surface of a substrate with a printhead. The silver compound solution and the hydrazine compound reducing agent solution are mixed just before, during, or following the printing of both solutions on the surface of the substrate, and the silver compound is then reduced to form conductive silver ink features on the substrate.

Abstract: An electronic device, such as a thin film transistor, containing a semiconductor of Formula/Structure (I) wherein each R? is independently at least one of hydrogen, and a suitable hydrocarbon; Ar is an aryl, inclusive of heteroaryl substituents; and M represents at least one thiophene based conjugated segment.

Abstract: An electronic device, such as a thin film transistor containing a semiconductor of Formula/Structure wherein R, R? and R? are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.

Abstract: A polymer of the formula/structure wherein R, R?, and R? are, for example, a suitable hydrocarbon, a halogen (halide) a hetero-containing group, or mixtures thereof; and n represents the number of repeating groups.