Abstract: A transporting device can transport at least one product, the transporting device includes a mounting frame, a driving mechanism, a transmitting mechanism including a plurality of bent portions, a plurality of guiding mechanisms, and a supporting mechanism. Each guiding mechanism includes a rotating wheel and a guiding plate. Each bent portion is connected to the rotating wheel. The guiding plate is connected to the rotating wheel. The supporting mechanism can support the product. The driving mechanism is further connected to the rotating wheel and can drive the transmitting mechanism to rotate to drive the supporting mechanism to move. The driving mechanism is further connected to the guiding plate, the guiding plate and the rotating wheel can synchronously rotate to drive the supporting mechanism to pass through the bent portions. The present disclosure further provides a heating device.

Abstract: A laser annealing apparatus is disclosed, which is adapted for a laser annealing process. The laser annealing apparatus comprises a laser-generating module, a resistance-measuring module, and a host circuit module, wherein the laser-generating module provides a laser beam to recrystallize an amorphous silicon thin film to form a polysilicon thin film. The resistance-measuring module is adapted for measuring the sheet resistance of the polysilicon thin film. Besides, the host circuit module is electrically coupled to and between the laser-generating module and the resistance-measuring module. The host circuit module outputs a feedback signal to the laser-generating module in accordance with the sheet resistance value. Then, the energy density of the laser beam is optimized. The laser annealing apparatus can improve the quality of the thin film, and increase the yield rate of the laser annealing process.

Abstract: A low temperature polysilicon thin film transistor and a method of forming the polysilicon layer inside the thin film transistor. An amorphous silicon layer is formed over a panel. The panel has a display region and a peripheral circuit region. A metallic layer is formed over a portion of the amorphous silicon layer in the peripheral circuit region. A crystallization process is performed to transform the amorphous silicon layer in the peripheral circuit region into a polysilicon layer. Thereafter, an excimer laser annealing process is performed to increase the grain size of the polysilicon layer in the peripheral circuit region and, at the same time, transform the amorphous silicon layer in the display region into a polysilicon layer. Since the average grain size of the polysilicon layer in the peripheral circuit region is larger, electron mobility is increased as demanded.

Abstract: A low temperature polysilicon thin film transistor and a method of forming the polysilicon layer inside the thin film transistor. An amorphous silicon layer is formed over a panel. The panel has a display region and a peripheral circuit region. A metallic layer is formed over a portion of the amorphous silicon layer in the peripheral circuit region. A crystallization process is performed to transform the amorphous silicon layer in the peripheral circuit region into a polysilicon layer. Thereafter, an excimer laser annealing process is performed to increase the grain size of the polysilicon layer in the peripheral circuit region and, at the same time, transform the amorphous silicon layer in the display region into a polysilicon layer. Since the average grain size of the polysilicon layer in the peripheral circuit region is larger, electron mobility is increased as demanded.